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IPL65R165CFDAUMA1 Equivalent & Substitute Parts
Part Overview
The IPL65R165CFDAUMA1 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 21.3A continuous drain current and 195W power dissipation in a 4-PowerTSFN surface mount package. The part is currently listed as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 650 | V |
| Continuous Drain Current (Id) @ 25°C | 21.3 | A (Tc) |
| On-State Resistance (Rds On Max) @ 9.3A, 10V | 165 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 900µA | 4.5 | V |
| Gate Charge (Qg Max) @ 10V | 86 | nC |
| Input Capacitance (Ciss Max) @ 100V | 2340 | pF |
| Power Dissipation (Max) | 195 | W (Tc) |
| Operating Temperature Range | -40 to 150 | °C (TJ) |
| Package Type | 4-PowerTSFN (PG-VSON-4) | Surface Mount |
| Gate Voltage (Max) | ±20 | V |
Substitute Part Grouping Explanation
Substitution of the IPL65R165CFDAUMA1 is determined by strict equivalence across the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain to Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 21.3A @ 25°C
- On-State Resistance (Rds On): 165mOhm @ 9.3A, 10V
- Gate Threshold Voltage (Vgs(th)): 4.5V @ 900µA
- Gate Charge (Qg): 86nC @ 10V
- Input Capacitance (Ciss): 2340pF @ 100V
- Power Dissipation: 195W (Tc)
- Operating Temperature: -40°C to 150°C
- Package: 4-PowerTSFN (PG-VSON-4)
- Gate Voltage Rating: ±20V
The IPL65R165CFDAUMA2 meets all specified electrical and mechanical parameters. The primary distinction is product status and packaging format: the substitute is an active product supplied in Tape & Reel format, whereas the original part is obsolete.
Parameter Comparison
| Parameter | IPL65R165CFDAUMA1 | IPL65R165CFDAUMA2 | Match |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Yes |
| Series | CoolMOS™ | CoolMOS™ CFD2 | Yes |
| FET Type | N-Channel | N-Channel | Yes |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Yes |
| Vdss | 650V | 650V | Yes |
| Id @ 25°C | 21.3A (Tc) | 21.3A (Tc) | Yes |
| Rds On (Max) @ 9.3A, 10V | 165mOhm | 165mOhm | Yes |
| Vgs(th) (Max) @ 900µA | 4.5V | 4.5V | Yes |
| Qg (Max) @ 10V | 86nC | 86nC | Yes |
| Ciss (Max) @ 100V | 2340pF | 2340pF | Yes |
| Power Dissipation (Max) | 195W (Tc) | 195W (Tc) | Yes |
| Operating Temperature | -40 to 150°C (TJ) | -40 to 150°C (TJ) | Yes |
| Mounting Type | Surface Mount | Surface Mount | Yes |
| Package / Case | 4-PowerTSFN | 4-PowerTSFN | Yes |
| Supplier Device Package | PG-VSON-4 | PG-VSON-4 | Yes |
| Vgs (Max) | ±20V | ±20V | Yes |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Yes |
| MSL | 2A (4 Weeks) | 2A (4 Weeks) | Yes |
| REACH Status | REACH Unaffected | REACH Unaffected | Yes |
| Product Status | Obsolete | Active | Functional Equivalent |
Engineering Selection Recommendations
The IPL65R165CFDAUMA2 is a direct functional equivalent to the IPL65R165CFDAUMA1 across all specified electrical and mechanical parameters. Selection of the substitute part is supported by the following factors:
Product Status: The IPL65R165CFDAUMA2 is an active product, ensuring long-term availability and supply chain continuity, whereas the original part is obsolete.
Compliance & Certifications: Both parts maintain identical RoHS3 compliance, REACH unaffected status, and moisture sensitivity levels (MSL 2A, 4 Weeks), ensuring regulatory and environmental compatibility.
Electrical Equivalence: All critical parameters—voltage rating, current capacity, on-state resistance, gate characteristics, and thermal performance—are identical between the two parts.
Packaging & Mounting: Both devices use the 4-PowerTSFN (PG-VSON-4) surface mount package, enabling direct PCB layout compatibility without redesign.
Supply Format: The substitute is available in Tape & Reel packaging, standard for production environments, compared to the original part's unspecified packaging format.
Frequently Asked Questions (FAQ)
Q: Can IPL65R165CFDAUMA2 be used as a direct replacement for IPL65R165CFDAUMA1 in existing designs?
A: Yes. The IPL65R165CFDAUMA2 is electrically and mechanically equivalent across all specified parameters. No circuit modifications or PCB redesign are required. Both parts share identical voltage ratings (650V), current capacity (21.3A), on-state resistance (165mOhm), and package geometry (4-PowerTSFN).
Q: What is the primary reason for substitution?
A: The IPL65R165CFDAUMA1 is obsolete. The IPL65R165CFDAUMA2 is an active product from the same manufacturer (Infineon Technologies) with identical electrical specifications, ensuring continued design support and procurement availability.
Q: Are there any differences in thermal performance between the two parts?
A: No. Both parts have identical power dissipation ratings (195W @ Tc) and operating temperature ranges (-40°C to 150°C). Thermal management requirements remain unchanged.
Q: Do both parts meet the same compliance standards?
A: Yes. Both the IPL65R165CFDAUMA1 and IPL65R165CFDAUMA2 are RoHS3 compliant, REACH unaffected, and have identical moisture sensitivity levels (MSL 2A, 4 Weeks).
Q: Is the gate charge identical between the two parts?
A: Yes. Both parts have a maximum gate charge (Qg) of 86nC @ 10V, ensuring identical gate drive requirements and switching characteristics.
Q: Can the substitute part be used in high-frequency switching applications?
A: Yes. The IPL65R165CFDAUMA2 maintains the same input capacitance (2340pF @ 100V) and gate charge specifications as the original part, supporting equivalent switching performance in high-frequency applications.
Q: What is the packaging difference between the two parts?
A: The IPL65R165CFDAUMA1 packaging format is unspecified in the provided data. The IPL65R165CFDAUMA2 is supplied in Tape & Reel (TR) format, standard for automated assembly and production environments.
Q: Are there any gate voltage differences?
A: No. Both parts have identical maximum gate voltage ratings of ±20V, ensuring compatible gate drive circuits and control electronics.
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