IPI65R660CFDXKSA1 Equivalent & Substitute Parts

Part Overview

The IPI65R660CFDXKSA1 is an N-Channel 650V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-262-3 (I2PAK) configuration and rated for 62.5W power dissipation at case temperature. The part is currently classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 2.1A, 10V	660	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	22	nC
Power Dissipation (Max)	62.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-262-3	-
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitution of the IPI65R660CFDXKSA1 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 650V to ensure safe operation in the original application circuit.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 6A at 25°C case temperature. Parts with higher current ratings provide design margin and thermal headroom.

On-State Resistance (Rds On): The maximum on-state resistance must not exceed the original specification to maintain power dissipation characteristics and thermal performance within acceptable limits.

Package and Mounting: All substitutes must use through-hole mounting in compatible packages (TO-262-3 or I2PAK variants) to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Drive Voltage: All parts operate with 10V gate drive voltage, ensuring compatibility with existing gate driver circuits.

Temperature Range: Operating temperature range of -55°C to 150°C must be maintained for thermal design consistency.

Parameter Comparison

Parameter	IPI65R660CFDXKSA1	IPI60R125CPXKSA1	IRFSL9N60APBF
Manufacturer	Infineon Technologies	Infineon Technologies	Vishay Siliconix
Vdss (V)	650	650	600
Id @ 25°C (A)	6	25	9.2
Rds On (Max) (mOhm)	660 @ 2.1A, 10V	125 @ 16A, 10V	750 @ 5.5A, 10V
Vgs(th) (Max) (V)	4.5 @ 200µA	3.5 @ 1.1mA	4 @ 250µA
Gate Charge (Qg) @ 10V (nC)	22	70	49
Power Dissipation (Max) (W)	62.5	208	170
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	TO-262-3	TO-262-3	I2PAK
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

IPI60R125CPXKSA1 (Infineon Technologies): This part is the manufacturer-recommended substitute from Infineon. It maintains identical voltage rating (650V) and package configuration (TO-262-3). The higher continuous drain current (25A vs. 6A) and significantly lower on-state resistance (125mOhm vs. 660mOhm) provide enhanced thermal performance and design margin. The part is in active production status with RoHS3 compliance certification. Gate charge is higher (70nC vs. 22nC), requiring verification of gate driver capability in high-frequency switching applications.

IRFSL9N60APBF (Vishay Siliconix): This alternative substitute provides cross-manufacturer compatibility. The voltage rating is reduced to 600V, which is acceptable for applications with design margin below 650V. Continuous drain current (9.2A) exceeds the original 6A requirement. On-state resistance (750mOhm) is slightly higher than the original specification. The part is in active production with RoHS3 compliance. Package compatibility is confirmed (I2PAK/TO-262-3 variants). Gate charge (49nC) is intermediate between the two Infineon options.

Both substitute parts maintain the required operating temperature range (-55°C to 150°C) and gate drive voltage (10V) compatibility. Selection between substitutes depends on application-specific requirements for voltage margin, switching frequency, and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the IPI60R125CPXKSA1 be used as a direct replacement for the IPI65R660CFDXKSA1?

A: Yes, the IPI60R125CPXKSA1 is the manufacturer-recommended substitute. Both parts share identical voltage rating (650V), package type (TO-262-3), and operating temperature range. The higher current rating and lower on-state resistance of the IPI60R125CPXKSA1 provide improved thermal performance. Gate charge is higher (70nC vs. 22nC), requiring confirmation that existing gate driver circuits can supply the additional charge without exceeding switching frequency limits.

Q: What is the voltage rating difference between the IPI65R660CFDXKSA1 and IRFSL9N60APBF?

A: The original part is rated for 650V drain-to-source voltage, while the IRFSL9N60APBF is rated for 600V. The 50V difference represents a 7.7% reduction in voltage margin. This substitute is acceptable only for applications where the maximum circuit voltage is confirmed to remain below 600V with adequate safety margin.

Q: Are the package types compatible between all three parts?

A: The IPI65R660CFDXKSA1 and IPI60R125CPXKSA1 both use TO-262-3 packaging. The IRFSL9N60APBF uses I2PAK packaging. Both package types are mechanically and electrically compatible variants of the same form factor (TO-262-3 Long Leads, I2PAK, TO-262AA), allowing PCB layout compatibility without modification.

Q: How does gate charge affect substitution suitability?

A: Gate charge (Qg) determines the total charge that must be supplied by the gate driver circuit. The original part requires 22nC, while substitutes require 70nC (IPI60R125CPXKSA1) or 49nC (IRFSL9N60APBF). Higher gate charge increases gate driver current demand and may affect switching speed. Verify that the existing gate driver circuit can supply the required charge at the intended switching frequency without exceeding current or voltage limits.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: On-state resistance directly affects power dissipation and thermal performance. The original part specifies 660mOhm at 2.1A and 10V gate voltage. The IPI60R125CPXKSA1 (125mOhm) provides significantly lower dissipation, while the IRFSL9N60APBF (750mOhm) is slightly higher. Lower Rds On reduces heat generation and allows higher current handling at the same temperature. Higher Rds On increases thermal load and may require enhanced cooling.

Q: Are all substitute parts RoHS compliant?

A: Yes. The IPI60R125CPXKSA1 carries RoHS3 compliance certification. The IRFSL9N60APBF also carries RoHS3 compliance certification. Both parts meet current environmental and regulatory requirements for electronic component manufacturing and use.

Q: Can the IRFSL9N60APBF be used in applications requiring 650V rating?

A: No. The IRFSL9N60APBF is rated for 600V maximum drain-to-source voltage. Use of this part in circuits designed for 650V operation creates risk of device failure if voltage transients or peak voltages exceed 600V. This substitute is suitable only for applications where maximum circuit voltage is confirmed to remain below 600V with adequate design margin.

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