IPI65R110CFDXKSA1 Equivalent & Substitute Parts

Part Overview

The IPI65R110CFDXKSA1 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 31.2A continuous drain current and features a maximum on-resistance of 110mOhm at specified conditions. The component is housed in a TO-262-3 (I2PAK) through-hole package with a power dissipation rating of 277.8W.

This part is classified as obsolete, making substitute components necessary for new designs and ongoing production requirements. Equivalent alternatives must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole mounting requirement.

Substiute Parts

IPI65R110CFDXKSA1

Infineon TechnologiesIn Stock: 1104IPI65R110CFDXKSA1 Datasheet

Current PartRFQ

STI33N60M2

STMicroelectronicsIn Stock: 2210STI33N60M2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPI65R110CFDXKSA1 is determined by the following critical parameters:

Voltage Class Compatibility: The main part operates at 650V Vdss. Substitute components must support equivalent or higher voltage ratings to ensure safe operation in the target application circuit.

Current Rating Alignment: The 31.2A continuous drain current establishes the minimum current handling requirement. Substitute parts must meet or exceed this specification to prevent thermal stress and premature failure.

On-Resistance Performance: The 110mOhm maximum on-resistance at specified gate and drain conditions directly impacts power dissipation and efficiency. Substitute components must maintain comparable or superior on-resistance characteristics to preserve circuit performance.

Thermal Management: The 277.8W power dissipation rating and operating temperature range (-55°C to 150°C) define thermal requirements. Substitute parts must support equivalent thermal performance within the same temperature envelope.

Package and Mounting: The TO-262-3 (I2PAK) through-hole package is mandatory for PCB compatibility. Substitute components must use identical or mechanically compatible packaging.

Gate Drive Characteristics: Gate threshold voltage, gate charge, and input capacitance affect circuit switching behavior. These parameters must remain within acceptable ranges to ensure proper gate driver compatibility.

The STI33N60M2 from STMicroelectronics is identified as a substitute option based on these criteria, though with specific trade-offs in voltage and current ratings that must be evaluated for application suitability.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IPI65R110CFDXKSA1 is classified as obsolete. The STI33N60M2 is an active product from STMicroelectronics, ensuring ongoing availability and manufacturing support for new designs and production continuity.

Compliance and Certification: Both components share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and HTSUS codes (8541.29.0095), confirming regulatory equivalence. Both devices maintain MSL Level 1 (Unlimited) moisture sensitivity ratings, indicating no special storage or handling requirements.

Electrical Parameter Trade-offs: The STI33N60M2 operates at 600V Vdss compared to the main part's 650V rating. This represents a 50V reduction in maximum voltage capability. The substitute also provides 26A continuous drain current versus 31.2A, a reduction of approximately 17%. On-resistance increases from 110mOhm to 125mOhm, representing a 13.6% increase in conduction losses.

Thermal Performance: Power dissipation capability decreases from 277.8W to 190W, a 31.6% reduction. This impacts thermal headroom in high-power applications and may require circuit design adjustments.

Gate Drive Advantages: The STI33N60M2 exhibits lower gate charge (45.5nC versus 118nC) and reduced input capacitance (1781pF versus 3240pF), resulting in faster switching characteristics and reduced gate driver power requirements.

Application Suitability: Selection between these components depends on circuit voltage and current requirements. Applications operating below 600V with current demands under 26A can utilize the STI33N60M2. Designs requiring the full 650V rating or 31.2A current capacity must source alternative substitutes or retain the original part through inventory channels.

Frequently Asked Questions (FAQ)

Q: Can the STI33N60M2 directly replace the IPI65R110CFDXKSA1 in all applications?

A: No. The STI33N60M2 has lower voltage (600V vs. 650V), current (26A vs. 31.2A), and power dissipation (190W vs. 277.8W) ratings. Direct substitution is only suitable for applications operating within these reduced specifications. Circuit analysis is required to confirm compatibility.

Q: What is the significance of the voltage rating difference between 650V and 600V?

A: The 50V difference represents the maximum drain-source voltage the device can safely block. Applications with peak voltages exceeding 600V require the 650V-rated main part or an alternative with equivalent voltage capability. Using an undersized voltage rating risks device breakdown.

Q: How does the on-resistance increase from 110mOhm to 125mOhm affect circuit performance?

A: Higher on-resistance increases conduction losses and heat generation. In high-current applications, this 13.6% increase may require thermal management adjustments, such as improved heatsinking or reduced operating current. Power dissipation calculations must be recalculated for the substitute part.

Q: Are the gate drive characteristics compatible between these two devices?

A: Both devices use 10V drive voltage for maximum on-resistance specification. However, the STI33N60M2 has significantly lower gate charge (45.5nC vs. 118nC) and input capacitance (1781pF vs. 3240pF). Existing gate drivers will function with the substitute, but switching speed will increase, potentially requiring circuit timing adjustments.

Q: Do both parts use identical packaging?

A: Both use TO-262 (I2PAK) through-hole packages with compatible mechanical dimensions. PCB footprints are interchangeable. The main part specifies TO-262-3 Long Leads, while the substitute uses standard TO-262 (I2PAK) designation, but both are mechanically compatible in the same through-hole layout.

Q: What is the impact of reduced power dissipation rating on thermal design?

A: The STI33N60M2 has a 31.6% lower power dissipation rating (190W vs. 277.8W). In applications approaching the thermal limits of the original part, the substitute provides less thermal margin. Thermal analysis must confirm that actual power dissipation remains within the substitute's 190W limit.

Q: Are there regulatory or compliance differences between these components?

A: No. Both components share identical REACH status, ECCN classification, HTSUS codes, and MSL ratings. Regulatory compliance is equivalent, and no additional certifications or documentation changes are required for substitution from a compliance perspective.

Q: Why is gate charge significantly lower in the STI33N60M2?

A: The STI33N60M2 uses MDmesh™ II Plus technology, which provides improved gate charge characteristics compared to the CoolMOS™ technology in the main part. Lower gate charge enables faster switching transitions and reduces gate driver power consumption, though this may require timing verification in existing circuits.

Q: Can the STI33N60M2 be used in applications requiring the full 31.2A rating?

A: No. The STI33N60M2 is rated for 26A continuous drain current. Using it in applications requiring 31.2A will cause thermal stress, reduced reliability, and potential device failure. Applications with current demands exceeding 26A require alternative substitutes or the original part.

Q: What should be verified before implementing the STI33N60M2 as a substitute?

A: Verify that the application circuit operates below 600V peak voltage, requires less than 26A continuous current, and can accommodate the increased on-resistance and reduced power dissipation. Thermal analysis, gate driver timing, and circuit simulation are recommended to confirm compatibility before production implementation.