IPI50R350CP Equivalent & Substitute Parts

Part Overview

The IPI50R350CP is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 550V drain-to-source voltage with 10A continuous drain current at 25°C. This device is packaged in a TO-262-3 (I2PAK) through-hole configuration and is part of the CoolMOS™ series. The IPI50R350CP is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement.

Substiute Parts

IPI50R350CP

Infineon TechnologiesIn Stock: 2126IPI50R350CP Datasheet

Current PartRFQ

STP18N55M5

STMicroelectronicsIn Stock: 2203STP18N55M5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPI50R350CP is based on electrical and mechanical compatibility within the following criteria:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 550V
• Continuous Drain Current (Id) must meet or exceed 10A at 25°C
• On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
• Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
• Power Dissipation capability must support the thermal requirements of the application

Mechanical Compatibility Requirements:

• Through-hole mounting configuration
• Package footprint compatibility with TO-262 or equivalent land patterns

The STP18N55M5 meets these substitution criteria by providing equal voltage rating (550V), exceeding current capability (16A vs. 10A), and maintaining compatible gate drive characteristics. The substitute part operates within the same temperature range and is classified as active product status.

Parameter Comparison

Engineering Selection Recommendations

The STP18N55M5 is a suitable substitute for the obsolete IPI50R350CP based on the following engineering criteria:

Electrical Performance: The STP18N55M5 maintains the same 550V voltage rating and exceeds the current capability requirement with 16A continuous drain current versus the original 10A specification. The on-state resistance of 192 mOhm is significantly lower than the original 350 mOhm, resulting in improved thermal efficiency and reduced power dissipation in the application.

Product Status and Availability: The STP18N55M5 is classified as active product status, ensuring long-term availability and supply chain continuity. The IPI50R350CP obsolete status necessitates transition to an alternative component.

Compliance and Certifications: Both components share identical REACH status (REACH Unaffected) and ECCN classification (EAR99). The STP18N55M5 carries RoHS3 compliance certification, meeting current regulatory requirements for electronic components.

Thermal Characteristics: The substitute part provides 110W maximum power dissipation capability compared to 89W for the original part, offering improved thermal headroom for the application.

Package Consideration: The STP18N55M5 uses a TO-220-3 package instead of the original TO-262-3 package. PCB layout modification is required to accommodate the different footprint and lead configuration.

Frequently Asked Questions (FAQ)

Q: Can the STP18N55M5 directly replace the IPI50R350CP without circuit modifications?

A: Electrical substitution is valid based on voltage rating, current capability, and gate drive characteristics. However, the package change from TO-262-3 to TO-220-3 requires PCB layout modification. The different thermal characteristics and lead spacing necessitate physical redesign of the mounting area.

Q: What are the key electrical differences between these two MOSFETs?

A: The primary differences are on-state resistance (192 mOhm vs. 350 mOhm), continuous drain current (16A vs. 10A), and gate threshold voltage (5V vs. 3.5V). The lower on-state resistance of the substitute part results in reduced conduction losses and improved efficiency. The higher gate threshold voltage requires verification that existing gate drive circuitry can reliably turn on the device.

Q: Are there thermal management implications when switching from IPI50R350CP to STP18N55M5?

A: The STP18N55M5 has a higher power dissipation rating (110W vs. 89W) and lower on-state resistance, which typically results in lower junction temperatures under the same operating conditions. However, the TO-220 package has different thermal characteristics than the TO-262 package. Thermal interface material and heatsink design may require adjustment based on the specific application thermal requirements.

Q: What is the impact of the different package types on circuit board design?

A: The TO-262-3 (I2PAK) and TO-220-3 packages have different lead spacing, pin configuration, and mounting hole requirements. The TO-220 package typically has larger lead spacing and different thermal pad geometry. Complete PCB redesign of the component mounting area is necessary, including trace routing, via placement, and heatsink attachment provisions.

Q: Is the gate charge difference between these parts significant for the application?

A: The gate charge increases from 25 nC to 31 nC, representing a 24% increase. This affects gate drive circuit design, particularly switching speed and driver power requirements. Applications with high switching frequency or tight timing constraints should evaluate the impact of increased gate charge on overall system performance.

Q: What compliance certifications should be verified before implementation?

A: Both components share REACH Unaffected status and EAR99 ECCN classification. The STP18N55M5 carries RoHS3 compliance, which is advantageous for applications subject to RoHS regulations. Verify that your specific application requirements align with these certifications.