IPI50R299CPXKSA1 Equivalent & Substitute Parts

Part Overview

The IPI50R299CPXKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 500V drain-to-source voltage with 12A continuous drain current at 25°C. This device is packaged in TO-262-3 (I2PAK) configuration and belongs to the CoolMOS™ series. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Substiute Parts

IPI50R299CPXKSA1

Infineon TechnologiesIn Stock: 930IPI50R299CPXKSA1 Datasheet

Current PartRFQ

IPI60R280C6XKSA1

Infineon TechnologiesIn Stock: 962IPI60R280C6XKSA1 Datasheet

DirectRFQ

STP18N55M5

STMicroelectronicsIn Stock: 2203STP18N55M5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPI50R299CPXKSA1 is determined by the following criteria:

Primary Compatibility Parameters:

• Drain-to-Source Voltage (Vdss) rating must equal or exceed 500V
• Continuous Drain Current (Id) must meet or exceed 12A at 25°C
• On-State Resistance (Rds On) must not exceed 299mOhm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
• Package must support Through Hole mounting configuration
• Operating temperature range must encompass -55°C to 150°C

Identified Substitutes:

IPI60R280C6XKSA1 (Infineon Technologies): Meets all primary parameters with higher voltage rating (600V), increased current capability (13.8A), and improved on-state resistance (280mOhm). Maintains identical package type (TO-262-3), mounting method, and temperature range. Product status is obsolete.

STP18N55M5 (STMicroelectronics): Exceeds primary parameters with 550V rating, 16A current capability, and lower on-state resistance (192mOhm). Differs in package configuration (TO-220-3 instead of TO-262-3) and represents an active product with current manufacturing status.

Parameter Comparison

Engineering Selection Recommendations

IPI60R280C6XKSA1 Selection Criteria: This substitute maintains identical package geometry (TO-262-3) and mounting configuration, enabling direct PCB compatibility without layout modifications. The higher voltage rating (600V vs 500V) provides additional design margin for transient voltage spikes. Improved on-state resistance (280mOhm vs 299mOhm) reduces conduction losses. Both devices share obsolete product status; however, IPI60R280C6XKSA1 demonstrates higher current inventory availability (908 Pcs vs 826 Pcs). ROHS3 compliance certification is provided for IPI60R280C6XKSA1.

STP18N55M5 Selection Criteria: This substitute offers active product status with ongoing manufacturing support, ensuring long-term availability. Superior electrical performance includes 16A current rating (vs 12A) and 192mOhm on-state resistance (vs 299mOhm), resulting in reduced thermal dissipation. Gate charge remains equivalent (31nC). Package transition from TO-262-3 to TO-220-3 requires PCB layout redesign and thermal management evaluation. ROHS3 compliance and higher inventory (2145 Pcs) support procurement reliability. Vgs(th) specification (5V vs 3.5V) requires gate driver voltage verification.

Frequently Asked Questions (FAQ)

Q: Can IPI60R280C6XKSA1 be used as a direct replacement for IPI50R299CPXKSA1?

A: Yes. Both devices share identical TO-262-3 package geometry, mounting type (Through Hole), and operating temperature range (-55°C to 150°C). The substitute meets or exceeds all primary electrical parameters: 600V Vdss rating accommodates the 500V requirement, 13.8A continuous current exceeds 12A specification, and 280mOhm on-state resistance is superior to 299mOhm. No PCB layout modifications are required.

Q: What are the implications of switching to STP18N55M5?

A: STP18N55M5 provides superior electrical performance and active product status but requires package transition from TO-262-3 to TO-220-3. This necessitates PCB layout redesign, including lead spacing and thermal pad repositioning. Gate threshold voltage increases from 3.5V to 5V, requiring verification that gate driver circuits supply adequate voltage. Thermal management must be re-evaluated due to different package thermal characteristics.

Q: Are there compatibility concerns with gate drive circuits?

A: IPI60R280C6XKSA1 maintains identical gate threshold voltage (3.5V @ 440µA) and gate charge (31nC @ 10V), ensuring compatibility with existing gate drive designs. STP18N55M5 specifies higher gate threshold voltage (5V @ 250µA) and identical gate charge; gate driver output voltage must be verified to exceed 5V minimum to ensure proper device switching.

Q: What is the significance of product status (Obsolete vs Active)?

A: Obsolete status indicates discontinued manufacturing. IPI50R299CPXKSA1 and IPI60R280C6XKSA1 are both obsolete; procurement must rely on existing inventory. STP18N55M5 maintains active status with ongoing production, supporting long-term design continuity and future procurement requirements.

Q: How do on-state resistance differences affect circuit performance?

A: Lower on-state resistance reduces conduction losses and thermal dissipation. IPI60R280C6XKSA1 (280mOhm) and STP18N55M5 (192mOhm) both provide improved efficiency compared to IPI50R299CPXKSA1 (299mOhm). In high-current applications, this translates to reduced heat generation and improved overall system efficiency.

Q: Are there compliance differences between substitutes?

A: IPI60R280C6XKSA1 and STP18N55M5 both carry ROHS3 compliance certification. IPI50R299CPXKSA1 compliance status is not specified in available documentation. All three devices are REACH Unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095.