IPI034NE7N3 G N-Channel MOSFET 75V 100A Equivalent & Substitute Parts

Part Overview

The IPI034NE7N3 G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 100A continuous drain current in a TO-262-3 through-hole package. This device belongs to the OptiMOS™ series and is classified as obsolete. Due to its obsolete product status, identifying functionally equivalent substitute components is necessary for ongoing design support, production continuity, and system maintenance applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	75	V
Current - Continuous Drain (Id) @ 25°C	100	A
Rds On (Max) @ Id, Vgs	3.4 mOhm @ 100A, 10V	—
Power Dissipation (Max)	214	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package / Case	TO-262-3	—

Substitute Part Grouping Explanation

Substitution of the IPI034NE7N3 G is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
FET Type: Must be N-Channel
Continuous Drain Current (Id): Must meet or exceed 100A at 25°C
On-State Resistance (Rds On): Must not significantly degrade circuit performance
Operating Temperature Range: Must span -55°C to 175°C minimum
Gate-Source Voltage (Vgs): Must support standard gate drive levels

Mechanical Compatibility Criteria:

Mounting Type: Through Hole required
Package: TO-262-3 or equivalent footprint compatibility

The substitute part IRFSL3207ZPBF meets these criteria with matching voltage rating (75V), higher current capability (120A), compatible through-hole mounting, and identical operating temperature range.

Parameter Comparison

Parameter	IPI034NE7N3 G	IRFSL3207ZPBF	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	75	75	V
Current - Continuous Drain (Id) @ 25°C	100	120	A
Rds On (Max) @ Vgs 10V	3.4 mOhm @ 100A	4.1 mOhm @ 75A	—
Gate Charge (Qg) @ 10V	117	170	nC
Power Dissipation (Max)	214	300	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-262-3	TO-262-3	—
Vgs(th) (Max) @ Id	3.8 @ 155µA	4.0 @ 150µA	V
Vgs (Max)	—	±20	V

Engineering Selection Recommendations

Substitution Feasibility:

The IRFSL3207ZPBF is a direct substitute for the IPI034NE7N3 G based on electrical and mechanical compatibility. Both devices share identical voltage ratings (75V Vdss), compatible current ratings (120A vs. 100A), matching operating temperature ranges (-55°C to 175°C), and identical through-hole TO-262-3 packaging.

Product Status Consideration:

The IPI034NE7N3 G is classified as obsolete, while the IRFSL3207ZPBF maintains active product status. This status difference supports the use of IRFSL3207ZPBF for new designs and ongoing production requirements.

Compliance and Certification:

Both parts are manufactured by Infineon Technologies and carry identical REACH and ECCN classifications (REACH Unaffected, EAR99). The IRFSL3207ZPBF includes RoHS3 compliance certification. Moisture sensitivity level is equivalent (MSL 1 - Unlimited) for both devices.

Performance Characteristics:

The IRFSL3207ZPBF provides enhanced performance margins with 20% higher continuous drain current (120A vs. 100A) and 40% higher power dissipation capability (300W vs. 214W). Gate charge is higher (170 nC vs. 117 nC), which may require gate drive circuit evaluation in high-frequency switching applications.

Frequently Asked Questions (FAQ)

Q: Can IRFSL3207ZPBF directly replace IPI034NE7N3 G in existing PCB designs?

A: Yes. Both devices use identical TO-262-3 through-hole packaging with matching pin configurations and footprints. No PCB modifications are required for mechanical compatibility.

Q: What are the key electrical differences between these parts?

A: The primary differences are continuous drain current (120A vs. 100A), power dissipation (300W vs. 214W), and gate charge (170 nC vs. 117 nC). Both maintain 75V Vdss rating and -55°C to 175°C operating range. The IRFSL3207ZPBF offers higher performance margins.

Q: Does the higher gate charge of IRFSL3207ZPBF affect gate drive circuit design?

A: Gate charge increase from 117 nC to 170 nC may require evaluation of existing gate drive circuits, particularly in high-frequency switching applications above 100 kHz. Standard gate drivers rated for 200+ nC typically accommodate this difference without modification.

Q: Are there packaging or supply chain differences?

A: IPI034NE7N3 G is supplied in standard packaging with obsolete status. IRFSL3207ZPBF is supplied in tube packaging with active product status, ensuring ongoing availability and supply chain continuity.

Q: What compliance certifications apply to both parts?

A: Both devices are REACH Unaffected and classified as EAR99. IRFSL3207ZPBF additionally carries RoHS3 compliance. Both have MSL 1 (Unlimited) moisture sensitivity ratings.

Q: Is thermal performance equivalent between the two devices?

A: IRFSL3207ZPBF provides superior thermal performance with 300W maximum power dissipation versus 214W for IPI034NE7N3 G. This allows for higher current operation or reduced thermal management requirements in equivalent applications.

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