IPD80N06S3-09 Equivalent & Substitute Parts

Part Overview

The IPD80N06S3-09 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 80A continuous drain current. This device is housed in a TO-252-3 (DPAK) surface mount package and is part of the OptiMOS™ series. The part is currently classified as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same or compatible package footprints.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	80	A
On-State Resistance (Rds On) @ 40A, 10V	8.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 55µA	4	V
Gate Charge (Qg) @ 10V	88	nC
Power Dissipation (Max)	107	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 (DPAK)
FET Type	N-Channel

Substitute Part Grouping Explanation

Substitution of the IPD80N06S3-09 is determined by strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:

Primary Electrical Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 55V
Continuous Drain Current (Id) must equal or exceed 80A at 25°C
On-State Resistance (Rds On) must not exceed the specified maximum to ensure thermal performance equivalence
Gate Threshold Voltage (Vgs(th)) must fall within compatible operating ranges
Operating temperature range must span -55°C to 175°C minimum

Mechanical Criteria:

Package type must be TO-252-3 (DPAK) or directly compatible footprint
Surface mount configuration required
Lead configuration must accommodate existing PCB layouts

The STD65N55F3 from STMicroelectronics meets these criteria as a direct substitute. Both devices share identical Vdss (55V) and Id (80A) ratings, compatible Rds On specifications, matching package geometry, and overlapping thermal performance characteristics. The STD65N55F3 maintains active product status, providing long-term availability advantages over the obsolete IPD80N06S3-09.

Parameter Comparison

Parameter	IPD80N06S3-09 (Infineon)	STD65N55F3 (STMicroelectronics)	Unit
Drain-to-Source Voltage (Vdss)	55	55	V
Continuous Drain Current (Id) @ 25°C	80	80	A
On-State Resistance (Rds On) @ 10V	8.4 @ 40A	8.5 @ 32A	mOhm
Gate Threshold Voltage (Vgs(th))	4 @ 55µA	4 @ 250µA	V
Gate Charge (Qg) @ 10V	88	45	nC
Input Capacitance (Ciss) @ 25V	6100	2200	pF
Power Dissipation (Max)	107	110	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Package Type	TO-252-3 (DPAK)	TO-252-3 (DPAK)
Product Status	Obsolete	Active
RoHS Compliance	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

The STD65N55F3 is the qualified substitute for the obsolete IPD80N06S3-09 based on the following engineering factors:

Electrical Equivalence: Both devices maintain identical voltage and current ratings (55V/80A). On-state resistance values are within acceptable tolerance (8.4 mOhm vs. 8.5 mOhm), ensuring equivalent thermal performance in typical operating conditions. Power dissipation ratings (107W vs. 110W) confirm thermal compatibility.

Package Compatibility: Both parts use the TO-252-3 (DPAK) surface mount package with identical footprints, enabling direct PCB substitution without layout modifications.

Product Status and Compliance: The STD65N55F3 maintains active product status, ensuring long-term availability and supply chain continuity. The part carries ROHS3 compliance certification, meeting current environmental and regulatory requirements. Both devices share identical REACH status (REACH Unaffected) and ECCN classification (EAR99).

Temperature Performance: Operating temperature ranges are identical (-55°C to 175°C), confirming thermal envelope compatibility across all application scenarios.

Gate Charge Consideration: The STD65N55F3 exhibits lower gate charge (45 nC vs. 88 nC), which may improve switching speed and reduce driver power consumption in gate-driven applications. This represents a performance advantage rather than a compatibility concern.

Frequently Asked Questions (FAQ)

Q: Can the STD65N55F3 directly replace the IPD80N06S3-09 without PCB modifications?

A: Yes. Both devices use identical TO-252-3 (DPAK) package geometry with matching pin configurations and footprints. Direct PCB substitution is possible without layout changes.

Q: Are the electrical specifications sufficiently similar for drop-in replacement?

A: Yes. The devices share identical Vdss (55V) and Id (80A) ratings. On-state resistance values (8.4 mOhm vs. 8.5 mOhm) are within acceptable engineering tolerance. Power dissipation ratings (107W vs. 110W) confirm thermal equivalence.

Q: What is the significance of the lower gate charge in the STD65N55F3?

A: Lower gate charge (45 nC vs. 88 nC) indicates faster switching transitions and reduced gate driver power requirements. This is a performance improvement that does not affect compatibility. Existing gate driver circuits will function correctly with the substitute part.

Q: Does the STD65N55F3 meet current compliance requirements?

A: Yes. The STD65N55F3 carries ROHS3 compliance certification and maintains REACH Unaffected status, meeting current environmental and regulatory standards. The obsolete IPD80N06S3-09 does not specify equivalent compliance.

Q: Are there inventory or supply considerations between these parts?

A: The STD65N55F3 maintains active product status with 15,165 pieces in stock, ensuring reliable long-term availability. The IPD80N06S3-09 is obsolete, making the STD65N55F3 the recommended choice for new designs and production continuity.

Q: What thermal performance differences should be considered?

A: Both devices operate across identical temperature ranges (-55°C to 175°C) with comparable power dissipation ratings. Thermal performance is equivalent under standard operating conditions.

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