IPD65R950CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPD65R950CFDATMA1 is an N-Channel 650V 3.9A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-252-3 (DPAK) surface mount package. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The device is rated for 36.7W power dissipation and operates across a temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	3.9	A
On-State Resistance (Rds On) @ 1.5A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	14.1	nC
Input Capacitance (Ciss) @ 100V	380	pF
Power Dissipation (Max)	36.7	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IPD65R950CFDATMA1 is determined by the following critical parameters:

Voltage Rating (Vdss): The 650V rating establishes the maximum drain-source voltage capability. Substitute parts must maintain this voltage class or higher to ensure safe operation in the original application circuit.

Continuous Drain Current (Id): The 3.9A rating at 25°C defines the current-handling capacity. Substitute parts with equal or higher current ratings are acceptable, as they provide equivalent or improved performance headroom.

On-State Resistance (Rds On): The 950mOhm specification at 1.5A and 10V gate drive determines conduction losses. Lower Rds On values indicate improved efficiency and reduced heat generation.

Package Type: The TO-252-3 (DPAK) surface mount package ensures mechanical and thermal compatibility with existing PCB layouts and assembly processes.

Gate Drive Voltage: The 10V drive voltage specification ensures compatibility with standard gate driver circuits.

Substitute parts are grouped into two categories:

Category 1 - Direct Parametric Equivalent: IPD65R950CFDATMA2 maintains identical electrical specifications and package type, differing only in product status (Active vs. Obsolete) and packaging format (Tape & Reel).

Category 2 - Functional Alternatives: STD6N60M2, STD7N65M2, and STD7NM80 provide alternative voltage and current ratings within the same package family, suitable for applications where the original specifications can accommodate parameter variations.

Parameter Comparison

Parameter	IPD65R950CFDATMA1	IPD65R950CFDATMA2	STD6N60M2	STD7N65M2	STD7NM80
Manufacturer	Infineon	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	600	650	800
Id @ 25°C (A)	3.9	3.9	4.5	5.0	6.5
Rds On @ Rated Current (mOhm)	950	950	1200	1150	1050
Vgs(th) @ 200µA (V)	4.5	4.5	4.0	4.0	5.0
Qg @ 10V (nC)	14.1	14.1	8.0	9.0	18.0
Ciss @ 100V (pF)	380	380	232	270	620
Power Dissipation (W)	36.7	36.7	60	60	90
Package	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPD65R950CFDATMA2 is the primary substitute for the obsolete IPD65R950CFDATMA1. This part maintains identical electrical specifications, voltage rating, current rating, and on-state resistance. The only differences are product status (Active) and packaging format (Tape & Reel vs. standard packaging). This part is recommended for direct replacement in existing designs without circuit modification. Inventory availability is significantly higher (3141 Pcs vs. 887 Pcs).

STD7N65M2 is a secondary substitute suitable for applications where the 650V voltage rating is critical and current requirements do not exceed 5A. This STMicroelectronics part maintains the 650V Vdss specification and provides higher continuous current (5A vs. 3.9A) with comparable on-state resistance (1.15 Ohm vs. 0.95 Ohm). The part is Active status with high inventory availability (9541 Pcs). Gate charge is lower (9 nC vs. 14.1 nC), resulting in faster switching characteristics.

STD6N60M2 is suitable for applications where voltage requirements can be reduced to 600V and current capacity can be increased to 4.5A. This part offers lower gate charge (8 nC) and input capacitance (232 pF), enabling higher switching frequencies. Higher power dissipation rating (60W vs. 36.7W) provides thermal margin. Use this substitute only when circuit design permits 600V operation.

STD7NM80 is applicable for high-voltage applications requiring 800V rating and higher current capacity (6.5A). This part is suitable only when the original circuit design can accommodate the higher voltage rating and when increased power dissipation capability (90W) is beneficial. Higher gate charge (18 nC) and input capacitance (620 pF) require gate driver adjustment.

All substitute parts are ROHS3 compliant, REACH unaffected, and rated for -55°C to 150°C operation, ensuring regulatory and environmental compatibility with the original part.

Frequently Asked Questions (FAQ)

Q: Can IPD65R950CFDATMA2 be used as a direct replacement for IPD65R950CFDATMA1?

A: Yes. IPD65R950CFDATMA2 is a direct parametric equivalent with identical Vdss (650V), Id (3.9A), Rds On (950mOhm), and package type (TO-252-3). The part is Active status with higher inventory availability. No circuit modifications are required.

Q: What is the key difference between IPD65R950CFDATMA1 and IPD65R950CFDATMA2?

A: The primary differences are product status (Obsolete vs. Active) and packaging format (standard vs. Tape & Reel). All electrical and thermal specifications are identical.

Q: Can STD7N65M2 replace IPD65R950CFDATMA1 in all applications?

A: STD7N65M2 maintains the 650V voltage rating and provides higher current capacity (5A vs. 3.9A). It is suitable for replacement when the application can tolerate lower gate charge (9 nC vs. 14.1 nC) and input capacitance (270 pF vs. 380 pF), which result in faster switching. Verify gate driver compatibility before substitution.

Q: Why does STD6N60M2 have lower gate charge than the original part?

A: STD6N60M2 operates at 600V (vs. 650V) and uses MDmesh™ II Plus technology, which reduces parasitic capacitances. Lower gate charge enables higher switching frequencies but requires verification that 600V operation is acceptable in the target application.

Q: Are all substitute parts available in the same TO-252-3 package?

A: Yes. All substitute parts listed are housed in TO-252-3 (DPAK) surface mount packages, ensuring mechanical and thermal compatibility with existing PCB layouts.

Q: What is the impact of higher Rds On in substitute parts?

A: Higher on-state resistance increases conduction losses and heat generation. STD6N60M2 (1.2 Ohm) and STD7N65M2 (1.15 Ohm) have slightly higher Rds On than the original (0.95 Ohm). Verify thermal design margins in the target application, particularly if operating at maximum current ratings.

Q: Can STD7NM80 be used in place of IPD65R950CFDATMA1?

A: STD7NM80 is suitable only for applications where 800V voltage rating is acceptable and beneficial. The higher voltage rating, current capacity (6.5A), and power dissipation (90W) provide performance headroom. However, higher gate charge (18 nC) and input capacitance (620 pF) require gate driver verification. Use only when circuit design permits 800V operation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, ensuring regulatory compliance equivalent to the original IPD65R950CFDATMA1.

Q: What is the inventory status of substitute parts?

A: IPD65R950CFDATMA2 has 3141 Pcs in stock. STD6N60M2 has 2300 Pcs. STD7N65M2 has 9541 Pcs. STD7NM80 has 32800 Pcs. All parts are listed as New Original In Stock.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message