IPD65R660CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPD65R660CFDATMA1 is an N-Channel 650V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-252-3 (DPAK) surface mount package. This device is classified as obsolete product status, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 62.5W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Due to its obsolete status, alternative components with compatible electrical and mechanical characteristics are required for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 2.1A, 10V	660	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	22	nC
Power Dissipation (Max)	62.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPD65R660CFDATMA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 650V
Continuous Drain Current (Id): Must equal or exceed 6A at 25°C
On-State Resistance (Rds On): Must not exceed 660mOhm at specified conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible within ±20V gate voltage range
Package Type: Must be TO-252-3 (DPAK) surface mount configuration
Operating Temperature: Must support -55°C to 150°C range
Compliance: RoHS3 and REACH requirements must be maintained

The three substitute parts identified meet these criteria with the following distinctions:

IPD65R660CFDATMA2 (Infineon CoolMOS™ CFD2): Direct manufacturer upgrade with increased Vdss (700V) and active product status. Identical current rating, Rds On, and gate characteristics. Enhanced voltage rating provides additional design margin.

IXTY4N65X2 (IXYS Ultra X2): Equivalent voltage rating (650V) with reduced current rating (4A vs. 6A). Suitable for applications with lower current requirements. Higher power dissipation capability (80W) and lower gate charge (8.3nC).

STD9N60M2 (STMicroelectronics MDmesh™ II Plus): Reduced voltage rating (600V) with comparable current (5.5A). Lower Rds On (780mOhm) and reduced gate charge (10nC). Suitable for lower voltage applications within the 600V envelope.

Parameter Comparison

Parameter	IPD65R660CFDATMA1	IPD65R660CFDATMA2	IXTY4N65X2	STD9N60M2
Manufacturer	Infineon	Infineon	IXYS	STMicroelectronics
Series	CoolMOS™	CoolMOS™ CFD2	Ultra X2	MDmesh™ II Plus
Product Status	Obsolete	Active	Active	Active
Vdss (V)	650	700	650	600
Id @ 25°C (A)	6	6	4	5.5
Rds On (Max) (mOhm)	660 @ 2.1A, 10V	660 @ 2.1A, 10V	850 @ 2A, 10V	780 @ 3A, 10V
Vgs(th) (V)	4.5 @ 200µA	4.5 @ 200µA	5 @ 250µA	4 @ 250µA
Gate Charge (nC)	22 @ 10V	22 @ 10V	8.3 @ 10V	10 @ 10V
Power Dissipation (W)	62.5	63	80	60
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IPD65R660CFDATMA2

The IPD65R660CFDATMA2 is the preferred substitute for the obsolete IPD65R660CFDATMA1. This component is manufactured by Infineon Technologies (same OEM as the original part) and maintains active product status. Electrical parameters are identical to the original device, with the exception of increased Vdss (700V vs. 650V), which provides enhanced voltage margin without compromising any other specifications. The part is ROHS3 compliant and REACH unaffected, maintaining full regulatory compliance. Inventory availability is confirmed at 2672 pieces.

Secondary Recommendation: IXTY4N65X2

The IXTY4N65X2 from IXYS is suitable for applications where continuous drain current requirements do not exceed 4A. This device maintains the 650V voltage rating and TO-252-3 package configuration. The reduced gate charge (8.3nC) and higher power dissipation capability (80W) may provide advantages in high-frequency switching applications. Active product status and ROHS3 compliance are confirmed.

Tertiary Recommendation: STD9N60M2

The STD9N60M2 from STMicroelectronics is applicable only to designs operating at 600V or below. This device offers reduced on-state resistance (780mOhm) and lower gate charge (10nC), which may improve efficiency in lower voltage applications. Active product status and full regulatory compliance are confirmed. This substitute is not recommended for applications requiring the full 650V rating of the original part.

Frequently Asked Questions (FAQ)

Q: Can the IPD65R660CFDATMA2 be used as a direct replacement for the IPD65R660CFDATMA1?

A: Yes. The IPD65R660CFDATMA2 is a direct substitute with identical electrical performance at the original 650V rating and above. The increased Vdss (700V) provides additional design margin and is fully backward compatible. No circuit modifications are required.

Q: What is the primary difference between the IPD65R660CFDATMA1 and IPD65R660CFDATMA2?

A: The IPD65R660CFDATMA2 features an increased Drain to Source Voltage rating of 700V compared to 650V in the original part. All other electrical parameters, including current rating, on-state resistance, and gate characteristics, remain identical. The IPD65R660CFDATMA2 is also active product status versus obsolete.

Q: Is the IXTY4N65X2 suitable for all applications using the IPD65R660CFDATMA1?

A: No. The IXTY4N65X2 has a reduced continuous drain current rating of 4A compared to 6A in the original part. This substitute is only appropriate for applications with maximum continuous drain current of 4A or less. Voltage rating (650V) and package type (TO-252-3) are compatible.

Q: Can the STD9N60M2 replace the IPD65R660CFDATMA1 in a 650V application?

A: No. The STD9N60M2 has a maximum Drain to Source Voltage of 600V, which is insufficient for applications requiring the full 650V rating of the original part. This substitute is only suitable for designs operating at 600V or below.

Q: Are all substitute parts available in the same package configuration?

A: Yes. All three substitute parts are housed in the TO-252-3 (DPAK) surface mount package, maintaining mechanical and thermal compatibility with the original IPD65R660CFDATMA1.

Q: Do all substitute parts meet RoHS3 and REACH compliance requirements?

A: Yes. All three substitute parts are ROHS3 compliant and REACH unaffected, maintaining full regulatory compliance equivalent to the original part.

Q: What is the gate charge difference between the original part and the IXTY4N65X2?

A: The original IPD65R660CFDATMA1 has a gate charge of 22nC at 10V, while the IXTY4N65X2 has a gate charge of 8.3nC at 10V. The lower gate charge in the IXTY4N65X2 may reduce gate drive power requirements in high-frequency applications.

Q: Which substitute part offers the lowest on-state resistance?

A: The STD9N60M2 offers the lowest on-state resistance at 780mOhm (measured at 3A, 10V), compared to 660mOhm in the original part and 850mOhm in the IXTY4N65X2. However, this advantage is only applicable in 600V or lower voltage designs.

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