IPD65R650CEATMA1 Equivalent & Substitute Parts

Part Overview

The IPD65R650CEATMA1 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 10.1A continuous drain current at 25°C with a maximum power dissipation of 86W. The component is packaged in TO-252-3 (DPAK) surface mount configuration.

The IPD65R650CEATMA1 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage, continuous drain current, on-state resistance, and thermal characteristics.

Substiute Parts

IPD65R650CEATMA1

Infineon TechnologiesIn Stock: 1326IPD65R650CEATMA1 Datasheet

Current PartRFQ

IPD65R650CEAUMA1

Infineon TechnologiesIn Stock: 7611IPD65R650CEAUMA1 Datasheet

MFR RecommendedRFQ

IXTY4N65X2

IXYSIn Stock: 1278IXTY4N65X2 Datasheet

MFR RecommendedRFQ

TK7P65W,RQ

Toshiba Semiconductor and StorageIn Stock: 102112TK7P65W,RQ Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPD65R650CEATMA1 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 650V minimum
• Package Type: TO-252-3 (DPAK) surface mount configuration
• Technology: N-Channel MOSFET (Metal Oxide)
• Operating Temperature Range: -40°C to 150°C minimum

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than required application current
• On-State Resistance (Rds On): Electrical performance within acceptable operating margins
• Gate Charge (Qg): Switching characteristics suitable for driver compatibility
• Power Dissipation: Thermal capability matching application requirements

The three substitute parts identified meet the mandatory voltage and package requirements. However, variations exist in continuous drain current ratings, on-state resistance characteristics, and gate charge specifications. These variations determine suitability for specific application contexts.

Parameter Comparison

Engineering Selection Recommendations

IPD65R650CEAUMA1 (Infineon Technologies)

This part is the manufacturer-recommended direct substitute. It maintains identical electrical characteristics to the main part, including 650V Vdss, 650mOhm Rds On, and 23nC gate charge. The primary difference is the reduced continuous drain current rating of 7A versus 10.1A. This part is active in production status and ROHS3 compliant. Selection is appropriate for applications where the required drain current does not exceed 7A at 25°C. The higher moisture sensitivity level (MSL 3) requires controlled storage conditions during 168-hour periods.

IXTY4N65X2 (IXYS)

This part provides a 650V Vdss rating in TO-252-3 package configuration. The continuous drain current is rated at 4A, representing the lowest current capability among the three substitutes. On-state resistance is 850mOhm, higher than the main part. Gate charge is 8.3nC, the lowest among all options, indicating faster switching characteristics. This part is active in production and ROHS3 compliant. Selection is appropriate only for applications with drain current requirements not exceeding 4A. The extended operating temperature range (-55 to 150°C) provides additional thermal margin in low-temperature environments.

TK7P65W,RQ (Toshiba Semiconductor and Storage)

This part maintains 650V Vdss rating in TO-252-3 DPAK package. Continuous drain current is rated at 6.8A, intermediate between the Infineon substitute and IXYS option. On-state resistance is 800mOhm. Gate charge is 15nC. Power dissipation is rated at 60W, lower than other options. This part is active in production and ROHS3 compliant. Selection is appropriate for applications with drain current requirements between 4A and 6.8A. The lower power dissipation rating requires thermal design consideration in high-power applications.

All three substitute parts are active in production status, providing supply chain continuity. All are ROHS3 compliant and REACH unaffected. Selection among substitutes depends on specific application drain current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can IPD65R650CEAUMA1 directly replace IPD65R650CEATMA1 in all applications?

A: IPD65R650CEAUMA1 is electrically compatible with IPD65R650CEATMA1 for applications where the required continuous drain current does not exceed 7A at 25°C. Both parts share identical Vdss (650V), Rds On (650mOhm), and gate charge (23nC) specifications. The primary limitation is the reduced current rating. Verify application current requirements before substitution.

Q: What is the significance of the different Rds On values among the substitute parts?

A: On-state resistance directly affects power dissipation and thermal performance. IPD65R650CEAUMA1 and the main part both specify 650mOhm Rds On. IXTY4N65X2 specifies 850mOhm, and TK7P65W,RQ specifies 800mOhm. Higher Rds On values result in increased power dissipation at the same current level. Applications with high continuous current or tight thermal budgets require lower Rds On values.

Q: Are all substitute parts compatible with the same PCB layout and driver circuits?

A: All substitute parts use TO-252-3 (DPAK) surface mount packaging, ensuring mechanical and footprint compatibility. However, gate charge differences (23nC for Infineon parts, 8.3nC for IXTY4N65X2, 15nC for Toshiba) may affect driver circuit performance. Gate drivers with adjustable slew rate capability accommodate these variations. Verify driver specifications for gate charge compatibility.

Q: What is the impact of MSL (Moisture Sensitivity Level) differences?

A: IPD65R650CEATMA1 and IXTY4N65X2 are rated MSL 1 (unlimited shelf life). IPD65R650CEAUMA1 is rated MSL 3, requiring controlled storage at specified temperature and humidity for 168-hour periods before soldering. MSL 3 components require bake-out procedures if storage limits are exceeded. Manufacturing processes must account for these handling requirements.

Q: Which substitute part is recommended for new designs?

A: IPD65R650CEAUMA1 is the manufacturer-recommended substitute, providing the closest electrical match to the obsolete main part. For new designs, this part offers active production status, ROHS3 compliance, and Infineon technical support. Current rating of 7A is suitable for most applications previously served by the 10.1A main part. Verify specific application current requirements before final selection.

Q: Can IXTY4N65X2 or TK7P65W,RQ be used in high-current applications?

A: IXTY4N65X2 is limited to 4A continuous drain current and is not suitable for applications requiring higher current. TK7P65W,RQ supports 6.8A continuous drain current, suitable for moderate-current applications. Applications requiring the full 10.1A capability of the main part must use IPD65R650CEAUMA1 or identify alternative parts with higher current ratings.

Q: Are there compliance or certification differences among the substitute parts?

A: All three substitute parts are ROHS3 compliant and REACH unaffected. IPD65R650CEATMA1 compliance status is not specified in available data. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code. Regulatory compliance is equivalent across all active substitutes for standard industrial applications.