IPD65R420CFDBTMA1 Equivalent & Substitute Parts

Part Overview

The IPD65R420CFDBTMA1 is an N-Channel 650V 8.7A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-252-3 (DPAK) surface mount package. This device is classified as Obsolete, indicating it has reached end-of-life status and is no longer recommended for new designs. The part delivers 83.3W maximum power dissipation and features a maximum on-resistance of 420mOhm at specified conditions. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for production and field replacement applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	8.7	A
On-Resistance (Rds On Max) @ 3.4A, 10V	420	mOhm
Gate Threshold Voltage (Vgs th) @ 340µA	4.5	V
Gate Charge (Qg) @ 10V	32	nC
Input Capacitance (Ciss) @ 100V	870	pF
Power Dissipation (Max)	83.3	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD65R420CFDBTMA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V minimum (allows higher voltage ratings)
Continuous Drain Current (Id): 8.7A minimum at 25°C
On-Resistance (Rds On): 420mOhm maximum at specified gate voltage
Package Type: TO-252-3 (DPAK) surface mount only
Operating Temperature: -55°C to 150°C minimum range
FET Type: N-Channel MOSFET technology

Substitution Logic: Parts are grouped into two categories based on their relationship to the main part:

Direct Equivalents – Parts with identical or superior electrical specifications within the same voltage class (650V) and current rating (8.7A or higher), maintaining the same on-resistance characteristics and package format.
Functional Alternatives – Parts with higher voltage ratings (700V) or improved current handling that maintain electrical compatibility while offering enhanced performance margins, suitable for applications where the original part specifications are met or exceeded.

All substitute parts listed comply with RoHS3 and REACH requirements, matching the compliance profile of the original component.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Ciss @ Vds (pF)	Power Diss. (W)	Package	Status
IPD65R420CFDBTMA1	Infineon	650	8.7	420	32	870	83.3	TO-252-3	Obsolete
IPD65R420CFDATMA2	Infineon	650	8.7	420	31.5	870	83.3	TO-252-3	Active
IPD65R380E6ATMA1	Infineon	650	10.6	380	39	710	83	TO-252-3	Not For New Designs
STD11N65M5	STMicroelectronics	650	9	480	17	620	85	TO-252-3	Active
STD11NM65N	STMicroelectronics	650	11	455	29	800	110	TO-252-3	Active
STD15N65M5	STMicroelectronics	650	11	340	22	816	85	TO-252-3	Active
STD16N65M2	STMicroelectronics	650	11	360	19.5	718	110	TO-252-3	Active
STD16N65M5	STMicroelectronics	650	12	299	45	1250	90	TO-252-3	Active
IXTY8N70X2	IXYS	700	8	500	12	800	150	TO-252-3	Active

Engineering Selection Recommendations

Tier 1 – Direct Replacement (Recommended for Obsolete Part Replacement):

IPD65R420CFDATMA2 is the primary recommended substitute. This Infineon part maintains identical electrical specifications (650V, 8.7A, 420mOhm) to the obsolete IPD65R420CFDBTMA1 while offering Active product status. The CFD2 series designation indicates an updated design generation with improved manufacturing processes. Gate charge is marginally reduced (31.5nC vs. 32nC), providing minor efficiency gains. This part is available in Tape & Reel packaging and carries full RoHS3 and REACH compliance. Selection of this part ensures pin-for-pin compatibility and identical thermal performance (83.3W).

Tier 2 – Infineon CoolMOS™ Alternatives (Higher Current Capability):

IPD65R380E6ATMA1 offers improved on-resistance (380mOhm vs. 420mOhm) with higher continuous drain current (10.6A vs. 8.7A) at the same 650V rating. This part is suitable for applications requiring enhanced current handling or lower conduction losses. However, product status is "Not For New Designs," limiting its use to replacement scenarios only. Gate charge increases to 39nC, requiring evaluation of gate drive circuit compatibility.

Tier 3 – STMicroelectronics MDmesh™ Series (Active Production, Broad Availability):

STD11N65M5, STD11NM65N, STD15N65M5, STD16N65M2, and STD16N65M5 represent active STMicroelectronics alternatives with 650V ratings and current ratings from 9A to 12A. These parts maintain TO-252-3 package compatibility and full compliance certifications. On-resistance values range from 299mOhm to 480mOhm, offering design flexibility based on thermal and efficiency requirements. All parts feature -55°C to 150°C operating temperature ranges. STD16N65M2 and STD16N65M5 provide the lowest on-resistance values (360mOhm and 299mOhm respectively), suitable for high-efficiency applications. Inventory availability for these parts is substantial (1,115 to 24,099 units), ensuring supply chain continuity.

Tier 4 – Higher Voltage Alternative (IXYS IXTY8N70X2):

IXTY8N70X2 provides a 700V rated alternative with 8A continuous current, suitable for applications requiring higher voltage margin. This part features significantly lower gate charge (12nC vs. 32nC), enabling faster switching and reduced gate drive power. Power dissipation rating of 150W exceeds the original part, providing thermal headroom. On-resistance of 500mOhm is higher than the original specification, requiring thermal analysis for conduction loss impact. This part is recommended only when higher voltage operation is a system requirement.

Compliance and Certification:

All recommended substitute parts carry RoHS3 Compliant and REACH Unaffected designations, matching the original part's environmental compliance profile. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q1: Can IPD65R420CFDATMA2 be used as a direct drop-in replacement for IPD65R420CFDBTMA1?

Yes. IPD65R420CFDATMA2 is electrically and mechanically identical to the obsolete IPD65R420CFDBTMA1. Both parts feature 650V Vdss, 8.7A continuous drain current, 420mOhm on-resistance, and TO-252-3 package format. The primary difference is product status: IPD65R420CFDATMA2 is Active, while the original is Obsolete. Gate charge is marginally lower (31.5nC vs. 32nC), which may improve switching efficiency but does not affect compatibility. No circuit modifications are required.

Q2: What is the difference between Infineon CoolMOS™ and STMicroelectronics MDmesh™ series MOSFETs?

Both series represent advanced MOSFET technologies optimized for high-voltage switching applications. CoolMOS™ and MDmesh™ employ different semiconductor process technologies and device architectures, resulting in different on-resistance and gate charge characteristics. For the 650V class, both series offer comparable performance. Selection between them depends on specific application requirements: CoolMOS™ parts may offer lower on-resistance in certain ratings, while MDmesh™ parts provide broader current rating options and higher inventory availability. Both meet the same compliance standards.

Q3: Why do some substitute parts have higher on-resistance (Rds On) than the original?

On-resistance varies with device design and current rating. Parts with higher current ratings (e.g., STD11N65M5 at 9A vs. original 8.7A) may have slightly higher on-resistance due to different die geometry and optimization for higher current handling. Conversely, parts with lower on-resistance (e.g., STD16N65M5 at 299mOhm) are optimized for lower conduction losses and typically have higher current ratings (12A). Selection should be based on application thermal requirements and efficiency targets.

Q4: Can IXTY8N70X2 (700V) be used in a circuit designed for 650V MOSFETs?

Yes, with design verification. IXTY8N70X2 has a higher voltage rating (700V vs. 650V), which provides additional voltage margin and is electrically compatible with 650V circuit designs. However, the higher on-resistance (500mOhm vs. 420mOhm) increases conduction losses and heat dissipation. Thermal analysis is required to confirm that the higher power dissipation does not exceed system cooling capacity. Gate charge is significantly lower (12nC vs. 32nC), which may require gate drive circuit adjustment for optimal switching performance.

Q5: What does "Not For New Designs" product status mean for IPD65R380E6ATMA1?

"Not For New Designs" indicates that Infineon has transitioned this part to a mature or declining production phase and does not recommend it for new product development. However, the part remains available for replacement and repair of existing systems. This status does not affect electrical performance or reliability; it reflects manufacturing and supply strategy. For new designs, IPD65R420CFDATMA2 or STMicroelectronics alternatives are preferred.

Q6: Are all substitute parts available in the same packaging options as the original?

All recommended substitute parts are available in TO-252-3 (DPAK) surface mount package, matching the original IPD65R420CFDBTMA1. Packaging options vary by supplier: Infineon parts are available in Tape & Reel (TR); STMicroelectronics parts are available in Cut Tape (CT) & Digi-Reel® or Tape & Reel; IXYS IXTY8N70X2 is available in Tube. These packaging variations do not affect electrical or mechanical compatibility; they reflect supplier logistics and handling preferences.

Q7: How do gate charge (Qg) differences affect circuit design?

Gate charge determines the total charge required to switch the MOSFET from off to on state. Lower gate charge (e.g., IXTY8N70X2 at 12nC) reduces gate drive power and enables faster switching transitions, beneficial for high-frequency applications. Higher gate charge (e.g., STD16N65M5 at 45nC) requires more gate drive current but may offer other performance benefits such as lower on-resistance. Gate drive circuits must supply sufficient current to charge the gate within the required switching time; substitution of parts with significantly different gate charge may require gate driver adjustment.

Q8: What is the significance of input capacitance (Ciss) in MOSFET selection?

Input capacitance affects gate charge requirements and switching speed. Higher Ciss (e.g., STD16N65M5 at 1250pF) increases total gate charge and switching losses, requiring more robust gate drive circuits. Lower Ciss (e.g., IPD65R380E6ATMA1 at 710pF) reduces switching losses and gate drive power. For applications with fixed gate drive circuits, parts with similar Ciss values (within ±20%) are preferred to maintain consistent switching performance and thermal behavior.

Q9: Can substitute parts with higher current ratings (e.g., 11A or 12A) be used in circuits designed for 8.7A?

Yes. Higher current rating parts are fully compatible with circuits designed for lower current ratings. The continuous drain current rating indicates the maximum safe current the device can handle; using a part with higher rating provides additional current margin and typically improves thermal performance due to lower on-resistance. No circuit modifications are required. This approach is common in reliability-critical applications where component derating is desired.

Q10: What compliance certifications should be verified when selecting a substitute part?

All recommended substitute parts carry RoHS3 Compliant and REACH Unaffected designations, matching the original IPD65R420CFDBTMA1. These certifications confirm compliance with European environmental regulations restricting hazardous substances and ensuring supply chain transparency. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture control requirements during storage or assembly. ECCN classification (EAR99) and HTSUS code (8541.29.0095) are identical across all parts, confirming equivalent export and tariff treatment.

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