IPD65R1K4CFDATMA2 Equivalent & Substitute Parts

Part Overview

The IPD65R1K4CFDATMA2 is an N-Channel 650V 2.8A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CFD2 series. This device is packaged in TO-252-3 (DPAK) surface mount configuration and is rated for 28.4W power dissipation at case temperature. The part is designated as Last Time Buy status, indicating end-of-life production. Equivalent and substitute parts are necessary to ensure design continuity and maintain supply chain availability for applications requiring comparable electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	2.8	A
Rds On (Max) @ 1A, 10V	1.4	Ohm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	10	nC
Input Capacitance (Ciss) @ 100V	262	pF
Power Dissipation (Max)	28.4	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD65R1K4CFDATMA2 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must operate at or above 650V Vdss. Parts rated at 600V or 620V represent lower voltage alternatives suitable only when circuit maximum voltage does not exceed the substitute rating.

Current Rating: The main part is rated for 2.8A continuous drain current. Substitute parts with equal or higher current ratings (3.5A, 3.6A, 4.2A, 5A, 5.5A) provide design margin and are electrically compatible.

On-Resistance (Rds On): The main part specifies 1.4 Ohm maximum at 1A, 10V gate drive. Substitute parts with comparable or lower Rds On values maintain or improve switching efficiency and thermal performance.

Gate Charge (Qg): Lower gate charge values (4.6 nC to 10 nC) indicate faster switching characteristics. Higher values (25.7 nC to 35 nC) represent slower switching but remain functionally compatible.

Package and Mounting: All substitute parts use TO-252-3 (DPAK) surface mount packaging, ensuring mechanical and thermal interface compatibility.

Compliance and Status: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the main part's regulatory requirements.

Parameter Comparison

Parameter	IPD65R1K4CFDATMA2	IPD60R1K5PFD7SAUMA1	STD5N60DM2	STD5N62K3	STD6N62K3	STDLED625
Manufacturer	Infineon	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	650	600	600	620	620	620
Id @ 25°C (A)	2.8	3.6	3.5	4.2	5.5	5.0
Rds On (Max) (Ohm)	1.4 @ 1A	1.5 @ 0.7A	1.55 @ 1.75A	1.6 @ 2.1A	1.28 @ 2.8A	1.6 @ 2.1A
Vgs(th) (V)	4.5 @ 100µA	4.5 @ 40µA	5.0 @ 250µA	4.5 @ 50µA	4.5 @ 50µA	4.5 @ 50µA
Qg (nC)	10 @ 10V	4.6 @ 10V	8.6 @ 10V	26 @ 10V	25.7 @ 10V	35 @ 10V
Ciss (pF)	262 @ 100V	169 @ 400V	375 @ 100V	680 @ 50V	706 @ 50V	890 @ 50V
Power Dissipation (W)	28.4	22	45	70	90	70
Operating Temp (°C)	-55 to 150	-40 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3	TO-252-3
Product Status	Last Time Buy	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute - IPD60R1K5PFD7SAUMA1: This Infineon CoolMOS™ PFD7 device provides the closest electrical match with active product status. The 600V rating is 50V lower than the main part; use this substitute only in applications where maximum circuit voltage does not exceed 600V. The 3.6A current rating exceeds the main part requirement. Gate charge of 4.6 nC is significantly lower, enabling faster switching. This part is currently in active production with 3365 units in stock.

Secondary Substitute - STD5N60DM2: This STMicroelectronics MDmesh™ DM2 device operates at 600V with 3.5A continuous current. The 1.55 Ohm Rds On is comparable to the main part. Gate charge of 8.6 nC is slightly lower. Operating temperature range matches the main part (-55°C to 150°C). This part is active with 2458 units in stock.

Alternative Substitute - STD5N62K3: This STMicroelectronics SuperMESH3™ device provides 620V rating with 4.2A current capability. The 1.6 Ohm Rds On is marginally higher. Gate charge of 26 nC is significantly higher, indicating slower switching response. This part is active with 41550 units in stock, providing excellent availability.

Higher Current Alternative - STD6N62K3: This STMicroelectronics SuperMESH3™ device offers 620V rating with 5.5A continuous current and 1.28 Ohm Rds On, providing superior current handling and lower on-resistance. Gate charge of 25.7 nC indicates slower switching. This part is active with 3632 units in stock.

Alternative - STDLED625: This STMicroelectronics device provides 620V rating with 5A continuous current and 1.6 Ohm Rds On. Gate charge of 35 nC is the highest among substitutes. This part is active with 834 units in stock.

All substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the main part.

Frequently Asked Questions (FAQ)

Q: Can I use a 600V rated substitute in a 650V application?

A: No. The IPD65R1K4CFDATMA2 is rated for 650V maximum drain-source voltage. Substitutes rated at 600V (IPD60R1K5PFD7SAUMA1, STD5N60DM2) must only be used in applications where the maximum circuit voltage does not exceed 600V. Using a lower-rated device in a higher-voltage circuit risks device failure and circuit damage.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. The main part specifies 10 nC. Substitutes with lower Qg values (4.6 nC for IPD60R1K5PFD7SAUMA1) enable faster switching and lower gate drive power consumption. Substitutes with higher Qg values (25.7 nC to 35 nC) require more gate drive energy and switch more slowly. Selection depends on gate driver capability and switching frequency requirements.

Q: Are all substitute parts pin-compatible with the main part?

A: Yes. All substitute parts use TO-252-3 (DPAK) surface mount packaging with identical pin configuration and thermal tab placement. Mechanical and thermal interface compatibility is maintained across all substitutes.

Q: What is the impact of Rds On variation among substitutes?

A: On-resistance directly affects power dissipation and thermal performance. The main part specifies 1.4 Ohm maximum. Substitutes with lower Rds On (1.28 Ohm for STD6N62K3) reduce conduction losses. Substitutes with higher Rds On (1.55 to 1.6 Ohm) increase conduction losses proportionally. Selection should consider thermal management capability and efficiency requirements.

Q: Why do some substitutes have higher power dissipation ratings?

A: Power dissipation rating reflects the device's thermal capability at case temperature. Higher ratings (45W to 90W) indicate devices with improved thermal characteristics or larger die size. These devices can handle higher power levels but are electrically compatible with lower-power applications. The main part's 28.4W rating is a minimum requirement; higher-rated substitutes provide thermal margin.

Q: Is the operating temperature range difference significant?

A: The main part operates from -55°C to 150°C. IPD60R1K5PFD7SAUMA1 operates from -40°C to 150°C, with a 15°C higher minimum temperature. This difference is significant only in applications requiring operation below -40°C. All other substitutes match or exceed the main part's temperature range.

Q: What does "Last Time Buy" status mean for the main part?

A: Last Time Buy indicates that the IPD65R1K4CFDATMA2 is no longer in active production and existing inventory represents the final available stock. Substitution to active-status parts (all listed alternatives) is necessary for long-term design continuity and future production requirements.

Q: Can I substitute based on current rating alone?

A: No. Current rating is only one parameter. Voltage rating (Vdss) is equally critical and must meet or exceed circuit requirements. On-resistance, gate charge, and thermal characteristics must also be evaluated for the specific application. Use the parameter comparison table to verify all relevant specifications.

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