IPD60R950C6 N-Channel 600V 4.4A MOSFET Equivalent & Substitute Parts

Part Overview

The IPD60R950C6 is an N-Channel 600V 4.4A MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ C6 series. This surface mount device in TO-252-3 (DPAK) packaging is designed for high-voltage switching applications requiring efficient power dissipation up to 37W at case temperature.

The IPD60R950C6 is discontinued at DiGi Electronics, with limited inventory (4502 pcs). Equivalent and substitute parts are necessary for ongoing production, maintenance, and new design implementations. Suitable alternatives must maintain electrical compatibility across drain-source voltage, continuous drain current, on-state resistance, and thermal characteristics while conforming to the same or compatible packaging standards.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4.4	A
On-State Resistance (Rds On) @ 1.5A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 130µA	3.5	V
Gate Charge (Qg) @ 10V	13	nC
Input Capacitance (Ciss) @ 100V	280	pF
Power Dissipation (Max)	37	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the IPD60R950C6 is determined by the following critical parameters:

Voltage Rating (Vdss): All substitutes must maintain 600V minimum drain-source voltage rating to ensure safe operation in the same circuit topology.

Continuous Drain Current (Id): Substitutes must support minimum 4.4A continuous drain current at 25°C case temperature. Parts with equal or higher current ratings are acceptable.

On-State Resistance (Rds On): The 950mOhm specification at 1.5A, 10V gate voltage establishes the conduction loss profile. Substitutes with equal or lower Rds On values maintain or improve efficiency.

Package Compatibility: All substitutes use TO-252-3 (DPAK) surface mount packaging with identical pinout and thermal characteristics, ensuring direct PCB compatibility.

Temperature Range: Operating temperature range of -55°C to 150°C must be maintained for thermal design consistency.

Compliance: RoHS3 compliance and REACH unaffected status are mandatory for regulatory alignment.

Substitutes are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (compatible but with minor parameter variations).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status
IPD60R950C6	Infineon	600	4.4	950	3.5	13	280	37	Discontinued
IPD60R950C6ATMA1	Infineon	600	4.4	950	3.5	13	280	37	Active
STD7N60M2	STMicroelectronics	600	5	950	4	8.8	271	60	Active
STD6N60M2	STMicroelectronics	600	4.5	1200	4	8	232	60	Active
PJMD900N60EC_L2_00001	Panjit International	600	5	900	4	8.8	310	47.5	Active
AOD4S60	Alpha & Omega Semiconductor	600	4	900	4.1	6	263	56.8	Not For New Designs
STD6N62K3	STMicroelectronics	620	5.5	1280	4.5	25.7	706	90	Active
STD7NM60N	STMicroelectronics	600	5	900	4	14	363	45	Active

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement):

IPD60R950C6ATMA1 is the direct parametric equivalent with identical electrical specifications. This part is manufactured by Infineon Technologies in the same CoolMOS™ C6 series and maintains all critical parameters: 600V Vdss, 4.4A Id, 950mOhm Rds On, and 37W power dissipation. The part is currently active with substantial inventory (480,100 pcs). Packaging is Cut Tape (CT) & Digi-Reel® format, compatible with automated assembly. RoHS3 compliance and REACH unaffected status are maintained. This is the recommended first choice for direct replacement.

Secondary Alternatives (Compatible Substitutes):

STD7N60M2 (STMicroelectronics, MDmesh™ II Plus series) provides improved performance with 5A continuous drain current, matching Rds On at 950mOhm, and higher power dissipation (60W). Gate charge is reduced to 8.8nC, improving switching speed. Operating temperature range is -55°C to 150°C. This part is active with 1,981 pcs inventory.

STD7NM60N (STMicroelectronics, MDmesh™ II series) offers 5A continuous drain current with 900mOhm Rds On and 45W power dissipation. This part has the highest inventory availability (104,188 pcs) and is suitable for applications where slightly higher gate charge (14nC) is acceptable.

PJMD900N60EC_L2_00001 (Panjit International) is a Super Junction MOSFET with 5A continuous drain current and 900mOhm Rds On. Power dissipation is 47.5W. This part is active with 6,679 pcs inventory and provides enhanced performance characteristics.

Not Recommended for New Designs:

AOD4S60 (Alpha & Omega Semiconductor) has product status "Not For New Designs" and should be avoided for new applications despite electrical compatibility. This part is suitable only for legacy system maintenance where existing designs are locked.

Voltage Rating Consideration:

STD6N62K3 operates at 620V Vdss, providing additional voltage margin. However, this part exhibits significantly higher Rds On (1.28Ohm) and gate charge (25.7nC), resulting in higher conduction losses and slower switching. Use only when higher voltage rating is a circuit requirement.

Frequently Asked Questions (FAQ)

Q: Can IPD60R950C6ATMA1 be used as a direct drop-in replacement for IPD60R950C6?

A: Yes. IPD60R950C6ATMA1 is the parametric equivalent with identical electrical specifications (600V, 4.4A, 950mOhm Rds On, 37W). Both use TO-252-3 (DPAK) packaging with identical pinout. The only difference is packaging format (Cut Tape & Digi-Reel® vs. standard reel) and product status (Active vs. Discontinued). No circuit modifications are required.

Q: What is the difference between STD7N60M2 and STD7NM60N?

A: Both are STMicroelectronics 600V, 5A MOSFETs in DPAK packaging. STD7N60M2 (MDmesh™ II Plus) has 950mOhm Rds On and 60W power dissipation with 8.8nC gate charge. STD7NM60N (MDmesh™ II) has 900mOhm Rds On and 45W power dissipation with 14nC gate charge. STD7NM60N has significantly higher inventory (104,188 pcs). Choose STD7N60M2 for lower gate charge and faster switching; choose STD7NM60N for better availability.

Q: Is PJMD900N60EC_L2_00001 suitable for the same applications as IPD60R950C6?

A: Yes, with considerations. PJMD900N60EC_L2_00001 is a Super Junction MOSFET with 600V rating, 5A continuous current, and 900mOhm Rds On, providing lower conduction losses than the original part. Power dissipation is 47.5W. The higher input capacitance (310pF @ 400V) may affect switching speed in high-frequency applications. Verify gate drive circuit compatibility before substitution.

Q: Why is AOD4S60 marked "Not For New Designs"?

A: AOD4S60 is a legacy part from Alpha & Omega Semiconductor with mature technology. While electrically compatible (600V, 4A, 900mOhm Rds On), the manufacturer has discontinued active development. This part should be used only for maintaining existing systems. New designs must use active parts such as IPD60R950C6ATMA1, STD7N60M2, or STD7NM60N.

Q: Can STD6N62K3 replace IPD60R950C6 in existing circuits?

A: STD6N62K3 is not recommended as a direct replacement. While it provides higher voltage rating (620V), it has significantly higher Rds On (1.28Ohm vs. 950mOhm), resulting in 35% higher conduction losses. Gate charge is nearly double (25.7nC vs. 13nC), causing slower switching and increased switching losses. Use STD6N62K3 only when the circuit specifically requires 620V voltage rating and thermal design accommodates higher power dissipation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the original IPD60R950C6 regulatory requirements. Compliance certifications are identical across all alternatives.

Q: What is the impact of different gate charge (Qg) values on circuit design?

A: Gate charge affects switching speed and gate drive power requirements. Lower Qg (6-8.8nC in AOD4S60 and STD7N60M2) enables faster switching and reduces gate driver current demand. Higher Qg (14-25.7nC in STD7NM60N and STD6N62K3) requires longer switching times and higher gate drive current. Verify gate driver specifications support the selected part's Qg value to ensure proper switching performance.

Q: Which substitute offers the best thermal performance?

A: STD6N62K3 has the highest power dissipation rating (90W), followed by STD6N60M2 (60W) and STD7N60M2 (60W). However, higher power rating does not indicate better thermal performance in the same application. For the IPD60R950C6 application profile (37W), STD7NM60N (45W) and PJMD900N60EC_L2_00001 (47.5W) provide adequate thermal margin with lower conduction losses than the original part.

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