IPD60R650CEATMA1 Equivalent & Substitute Parts

Part Overview

The IPD60R650CEATMA1 is an N-Channel 600V 7A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CE series. This device is designed for surface mount applications in the TO-252-3 (DPAK) package and is rated for 63W power dissipation at case temperature. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

IPD60R650CEATMA1

Infineon TechnologiesIn Stock: 1972IPD60R650CEATMA1 Datasheet

Current PartRFQ

IPD60R650CEAUMA1

Infineon TechnologiesIn Stock: 4707IPD60R650CEAUMA1 Datasheet

DirectRFQ

STD11N65M2

STMicroelectronicsIn Stock: 1783STD11N65M2 Datasheet

MFR RecommendedRFQ

TSM70N750CP ROG

Taiwan Semiconductor CorporationIn Stock: 1222TSM70N750CP ROG Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPD60R650CEATMA1 is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must maintain the 600V minimum rating. Parts with higher voltage ratings (650V, 700V) are acceptable as they provide equivalent or superior voltage withstand capability.

Drain Current (Id): The 7A continuous drain current establishes the minimum current handling requirement. Substitute parts with equal or higher current ratings satisfy this criterion.

On-State Resistance (Rds On): The 650mOhm specification at defined conditions represents the maximum acceptable on-state resistance. Substitute parts with equal or lower Rds On values maintain or improve electrical performance.

Package Compatibility: All substitute parts must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

Operating Temperature Range: The -40°C to 150°C range must be met or exceeded by substitute parts.

Gate Charge (Qg): The 20.5nC gate charge specification influences switching speed and driver requirements. Substitute parts with comparable or lower gate charge values are acceptable.

Parameter Comparison

Engineering Selection Recommendations

IPD60R650CEAUMA1 (Infineon Technologies): This part is the direct equivalent from the same manufacturer and series. It maintains identical electrical specifications (600V, 650mOhm Rds On, 20.5nC gate charge) while offering higher continuous drain current (9.9A vs. 7A) and increased power dissipation capability (82W vs. 63W). The part is currently in active production status with ROHS3 compliance. This is the primary recommended substitute for direct replacement applications.

STD11N65M2 (STMicroelectronics): This part meets the core voltage and current requirements with a 650V rating and 7A continuous drain current. The Rds On specification (670mOhm) is marginally higher than the original part. The lower gate charge (12.5nC) provides faster switching characteristics. The part is in active production with ROHS3 compliance and extended operating temperature range (-55°C to 150°C). This substitute is suitable for applications where STMicroelectronics device qualification is acceptable.

TSM70N750CP ROG (Taiwan Semiconductor Corporation): This part operates at a higher voltage rating (700V) with slightly lower continuous drain current (6A vs. 7A). The higher on-state resistance (750mOhm) and higher input capacitance (555pF) represent performance trade-offs. The part is obsolete and should be considered only when existing inventory is available and no other alternatives are viable.

Frequently Asked Questions (FAQ)

Q: Can IPD60R650CEAUMA1 be used as a direct replacement for IPD60R650CEATMA1?

A: Yes. Both parts share identical electrical specifications including 600V Vdss, 650mOhm Rds On, and 20.5nC gate charge. The IPD60R650CEAUMA1 offers higher current and power ratings, making it a superior substitute. The primary difference is product status (active vs. obsolete) and packaging format (Tape & Reel vs. standard).

Q: What are the key differences between STD11N65M2 and the original IPD60R650CEATMA1?

A: The STD11N65M2 has a 50V higher voltage rating (650V vs. 600V), marginally higher on-state resistance (670mOhm vs. 650mOhm), and significantly lower gate charge (12.5nC vs. 20.5nC). These differences result in faster switching speed but slightly higher conduction losses. Both parts are rated for 7A continuous drain current and use the same TO-252-3 package.

Q: Is TSM70N750CP ROG suitable for new designs?

A: No. This part is classified as obsolete and should not be selected for new designs. It is listed as a historical equivalent only. The higher on-state resistance (750mOhm) and higher input capacitance (555pF) represent performance degradation compared to the original part.

Q: Are all substitute parts compatible with existing PCB layouts?

A: Yes. All listed substitute parts use the TO-252-3 (DPAK) surface mount package, ensuring mechanical and thermal compatibility with PCB designs created for the IPD60R650CEATMA1.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) affects the gate driver requirements and switching speed. The IPD60R650CEATMA1 and IPD60R650CEAUMA1 both specify 20.5nC. The STD11N65M2 specifies 12.5nC, resulting in faster switching transitions and lower gate driver power consumption. The TSM70N750CP ROG specifies 10.7nC. Existing gate driver circuits designed for 20.5nC will function with lower gate charge parts, though switching performance will improve.

Q: Which substitute part offers the best thermal performance?

A: The IPD60R650CEAUMA1 offers the highest power dissipation rating (82W) compared to the original part (63W), providing superior thermal headroom. The STD11N65M2 is rated for 85W. Both parts are suitable for applications requiring enhanced thermal performance.