IPD60R460CEATMA1 Equivalent & Substitute Parts

Part Overview

The IPD60R460CEATMA1 is an N-Channel 600V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CE series. This device is rated for 9.1A continuous drain current and features a maximum on-resistance of 460mOhm at specified conditions. The component is housed in a TO-252-3 (DPAK) surface mount package.

The IPD60R460CEATMA1 is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	9.1	A
Rds On (Max) @ Id, Vgs	460	mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs	28	nC @ 10V
Power Dissipation (Max)	74	W
Operating Temperature Range	-40 to 150	°C
Package / Case	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD60R460CEATMA1 is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must maintain a minimum Vdss of 600V to ensure equivalent voltage withstand capability. Parts with higher voltage ratings (650V or greater) are acceptable as they provide additional margin.

Current Rating (Id): The continuous drain current of substitute parts must be equal to or greater than 9.1A at 25°C to support the same load conditions.

On-Resistance (Rds On): The maximum on-resistance must not exceed the original specification to maintain thermal performance and power dissipation characteristics within acceptable limits.

Package Compatibility: All substitute parts must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Charge (Qg): Gate charge values influence switching speed and driver circuit requirements. Substitute parts with comparable gate charge values ensure compatible gate drive performance.

Temperature Range: Operating temperature range must encompass the original specification (-40°C to 150°C minimum).

Two substitute parts meet these criteria:

FCD7N60TM (onsemi SuperFET™): Meets voltage and package requirements with 7A rating and 600mOhm Rds On.
IXTY8N65X2 (IXYS Ultra X2): Exceeds voltage rating at 650V with 8A rating and 500mOhm Rds On.

Parameter Comparison

Parameter	IPD60R460CEATMA1	FCD7N60TM	IXTY8N65X2	Unit
Manufacturer	Infineon Technologies	onsemi	IXYS	—
Series	CoolMOS™ CE	SuperFET™	Ultra X2	—
FET Type	N-Channel	N-Channel	N-Channel	—
Vdss	600	600	650	V
Id @ 25°C	9.1	7	8	A
Rds On (Max)	460 @ 3.4A, 10V	600 @ 3.5A, 10V	500 @ 4A, 10V	mOhm
Gate Charge (Qg) (Max)	28 @ 10V	30 @ 10V	12 @ 10V	nC
Power Dissipation (Max)	74	83	150	W
Operating Temperature	-40 to 150	-55 to 150	-55 to 150	°C
Package	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	—
Product Status	Obsolete	Not For New Designs	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FCD7N60TM Selection Criteria:

The FCD7N60TM is suitable for applications where the original IPD60R460CEATMA1 current rating of 9.1A can be reduced to 7A without compromising circuit performance. This part carries onsemi SuperFET™ technology and is classified as Not For New Designs, indicating limited long-term availability. The 600mOhm on-resistance is higher than the original specification, resulting in increased power dissipation. The part is ROHS3 compliant and carries MSL 1 rating, indicating superior moisture resistance compared to the original MSL 3 specification.

IXTY8N65X2 Selection Criteria:

The IXTY8N65X2 is the preferred substitute for applications requiring sustained production and long-term component availability. This part is classified as Active, ensuring ongoing supply. The 650V voltage rating provides additional design margin above the 600V requirement. The 500mOhm on-resistance is superior to the original 460mOhm specification, delivering lower power dissipation and improved thermal performance. Gate charge is significantly lower at 12nC compared to 28nC, enabling faster switching characteristics. The part is ROHS3 compliant with MSL 1 rating. Maximum power dissipation of 150W exceeds the original 74W specification, providing thermal headroom.

Compliance Considerations:

Both substitute parts are REACH Unaffected and carry EAR99 ECCN classification, matching the original part's regulatory status. Both are ROHS3 compliant, supporting environmental compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can the FCD7N60TM directly replace the IPD60R460CEATMA1 in all applications?

A: The FCD7N60TM is mechanically and electrically compatible in terms of package and voltage rating. However, the reduced current rating (7A versus 9.1A) and increased on-resistance (600mOhm versus 460mOhm) require circuit analysis to confirm suitability. Applications operating at or near the 9.1A specification may require design modification.

Q: What is the primary advantage of the IXTY8N65X2 over the FCD7N60TM?

A: The IXTY8N65X2 offers Active product status, ensuring long-term availability and supply continuity. The superior on-resistance (500mOhm) and lower gate charge (12nC) provide improved electrical performance. The higher voltage rating (650V) and power dissipation capability (150W) deliver additional design margin.

Q: Are all three parts pin-compatible?

A: Yes. The IPD60R460CEATMA1, FCD7N60TM, and IXTY8N65X2 all use the TO-252-3 (DPAK) package with identical pin configuration, enabling direct PCB substitution without layout modification.

Q: What is the impact of the higher on-resistance in the FCD7N60TM?

A: Higher on-resistance increases conduction losses and power dissipation. In applications where the device operates continuously at rated current, thermal management may require additional consideration. The 83W power dissipation rating of the FCD7N60TM is higher than the original 74W, but lower than the IXTY8N65X2 at 150W.

Q: Does the lower gate charge of the IXTY8N65X2 affect gate driver selection?

A: Lower gate charge (12nC versus 28nC) reduces gate drive power requirements and enables faster switching transitions. Existing gate driver circuits designed for the original 28nC specification will operate with improved performance margins. No gate driver redesign is required.

Q: What is the significance of MSL rating differences?

A: The original IPD60R460CEATMA1 carries MSL 3 (168 Hours), while both substitutes carry MSL 1 (Unlimited). MSL 1 indicates superior moisture resistance and eliminates time-based moisture absorption constraints during storage and handling, reducing production risk.

Q: Can the IXTY8N65X2 be used in applications originally designed for the IPD60R460CEATMA1?

A: Yes. The IXTY8N65X2 meets or exceeds all critical parameters: voltage rating (650V ≥ 600V), current rating (8A ≥ 9.1A requires verification for specific application), on-resistance (500mOhm ≤ 460mOhm), and temperature range (-55°C to 150°C ≥ -40°C to 150°C). Circuit analysis is required to confirm current rating adequacy for the specific application.

Q: What is the difference between Obsolete and Not For New Designs product status?

A: Obsolete indicates the part is no longer manufactured and existing inventory is depleted. Not For New Designs indicates the manufacturer has discontinued development support but may maintain limited production for existing customers. Active status indicates full manufacturing support and long-term availability.

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