IPD60R380C6 N-Channel 600V 10.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IPD60R380C6 is an N-Channel 600V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ C6 series. This device is rated for 10.6A continuous drain current at 25°C with a maximum on-resistance of 380mOhm at 3.8A and 10V gate-source voltage. The component is housed in a TO-252-3 (DPAK) surface mount package and is designed for high-efficiency power conversion applications requiring 600V blocking capability.

The IPD60R380C6 is currently discontinued at DiGi Electronics, with 20,412 pieces available as new original stock. Due to its discontinued status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance while accommodating the same or compatible packaging standards.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	600	V	Blocking voltage rating
Continuous Drain Current (Id) @ 25°C	10.6	A	Tc (case temperature)
On-Resistance (Rds On Max)	380	mOhm	@ 3.8A, 10V Vgs
Gate-Source Threshold Voltage (Vgs(th) Max)	3.5	V	@ 320µA Id
Gate Charge (Qg Max)	32	nC	@ 10V Vgs
Maximum Gate-Source Voltage	±20	V	Absolute maximum
Input Capacitance (Ciss Max)	700	pF	@ 100V Vds
Power Dissipation (Max)	83	W	Tc
Operating Temperature Range	-55 to 150	°C	TJ (junction)
Package Type	TO-252-3 DPAK	-	Surface mount, 2 leads + tab
Technology	N-Channel MOSFET	-	Metal oxide semiconductor

Substitute Part Grouping Explanation

Substitution of the IPD60R380C6 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal 600V
Continuous Drain Current (Id): Must be ≥10.6A at 25°C case temperature
On-Resistance (Rds On): Must be ≤380mOhm at specified gate-source voltage and drain current
Package Type: Must be TO-252-3 (DPAK) or compatible surface mount variant
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide Semiconductor)
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

Gate-Source Threshold Voltage (Vgs(th)): Acceptable range 3.5V to 5V
Maximum Gate-Source Voltage: Must support ±20V minimum
Gate Charge (Qg): Lower values preferred for faster switching; values up to 45nC acceptable
Input Capacitance (Ciss): Values up to 1770pF acceptable
Power Dissipation: Must support minimum 83W at case temperature
RoHS3 Compliance: Required
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Substitute parts are grouped into two categories: direct equivalents from Infineon (identical electrical specifications with packaging variations) and cross-manufacturer alternatives that meet or exceed the electrical performance requirements while maintaining package compatibility.

Parameter Comparison

Parameter	IPD60R380C6	IPD60R380C6ATMA1	AOD11S60	FCD380N60E	PJMD360N60EC_L2_00001	STD10NM60N	STD10NM60ND	STD13N60M2	STD13NM60N	STD13NM60ND
Manufacturer	Infineon	Infineon	Alpha & Omega	onsemi	Panjit	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600	600	600	600	600	600
Id @ 25°C (A)	10.6	10.6	11	10.2	11	10	8	11	11	11
Rds On Max (mOhm)	380 @ 3.8A, 10V	380 @ 3.8A, 10V	399 @ 3.8A, 10V	380 @ 5A, 10V	360 @ 5.5A, 10V	550 @ 4A, 10V	600 @ 4A, 10V	380 @ 5.5A, 10V	360 @ 5.5A, 10V	380 @ 5.5A, 10V
Vgs(th) Max (V)	3.5 @ 320µA	3.5 @ 320µA	4.1 @ 250µA	3.5 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA
Qg Max (nC)	32 @ 10V	32 @ 10V	11 @ 10V	45 @ 10V	18.7 @ 10V	19 @ 10V	20 @ 10V	17 @ 10V	30 @ 10V	24.5 @ 10V
Vgs Max (V)	±20	±20	±30	±20	±30	±25	±25	±25	±25	±25
Ciss Max (pF)	700 @ 100V	700 @ 100V	545 @ 100V	1770 @ 25V	735 @ 400V	540 @ 50V	577 @ 50V	580 @ 100V	790 @ 50V	845 @ 50V
Power Dissipation Max (W)	83	83	208	106	87.5	70	70	110	90	109
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252 DPAK	TO-252AA DPAK	TO-252AA DPAK	DPAK	DPAK	DPAK	DPAK	DPAK
Product Status	Discontinued	Not For New Designs	Not For New Designs	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Inventory Status	20,412 Pcs	2,120 Pcs	2,869 Pcs	16,463 Pcs	6,819 Pcs	25,273 Pcs	8,680 Pcs	23,329 Pcs	24,099 Pcs	1,593 Pcs

Engineering Selection Recommendations

Tier 1: Direct Infineon Equivalents

IPD60R380C6ATMA1 is the direct equivalent variant of the main part, differing only in packaging format (Tape & Reel versus bulk). This part maintains identical electrical specifications including 600V Vdss, 10.6A continuous drain current, and 380mOhm on-resistance. The product status is "Not For New Designs," indicating Infineon has transitioned this technology. However, 2,120 pieces remain in inventory. This substitute is suitable for replacement applications where existing designs require the exact electrical performance profile.

Tier 2: Active Cross-Manufacturer Substitutes with Equivalent Performance

PJMD360N60EC_L2_00001 (Panjit International) is the only substitute with Active product status. This part meets all primary substitution criteria: 600V Vdss, 11A continuous drain current (exceeds 10.6A requirement), and 360mOhm on-resistance (superior to 380mOhm specification). The device is housed in TO-252AA DPAK package, maintaining mechanical compatibility. Gate charge is 18.7nC, significantly lower than the original 32nC, resulting in faster switching characteristics. Input capacitance is 735pF at 400V, providing stable performance across the operating range. Power dissipation rating of 87.5W exceeds the 83W requirement. RoHS3 compliance and MSL 1 rating are confirmed. With 6,819 pieces in stock, this part offers long-term availability for new designs.

Tier 3: Active STMicroelectronics Substitutes

STD13N60M2 and STD13NM60N both provide 11A continuous drain current with 360-380mOhm on-resistance, meeting or exceeding electrical requirements. STD13N60M2 features 17nC gate charge and 110W power dissipation, while STD13NM60N provides 30nC gate charge and 90W dissipation. Both are housed in DPAK packages with full RoHS3 compliance. STD13N60M2 has 23,329 pieces in inventory; STD13NM60N has 24,099 pieces. These parts are suitable for applications where slightly higher gate charge is acceptable in exchange for proven active product status and high availability.

STD10NM60N provides 10A continuous drain current with 550mOhm on-resistance. While the on-resistance exceeds the original specification, the part maintains 600V Vdss and DPAK packaging. This substitute is suitable only for applications where the 10A current rating is sufficient and higher conduction losses are acceptable. With 25,273 pieces in stock, availability is excellent.

STD10NM60ND is not recommended as a direct substitute. The 8A continuous drain current falls below the 10.6A requirement, and 600mOhm on-resistance significantly exceeds the original specification.

Tier 4: Alternative Manufacturers

AOD11S60 (Alpha & Omega Semiconductor) provides 11A continuous drain current and 399mOhm on-resistance, both acceptable for substitution. However, the product status is "Not For New Designs," and gate charge is only 11nC, which may require circuit redesign for gate drive optimization. Power dissipation of 208W substantially exceeds requirements. With 2,869 pieces in inventory, this part is suitable for replacement applications only.

FCD380N60E (onsemi SuperFET® II) provides 10.2A continuous drain current and 380mOhm on-resistance, meeting the original specifications. However, gate charge of 45nC exceeds the original 32nC, and input capacitance of 1770pF at 25V is significantly higher than the original 700pF at 100V. Product status is "Not For New Designs." With 16,463 pieces in inventory, this part is suitable for replacement applications where the higher capacitance and gate charge are acceptable.

Compliance and Certification Summary

All substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage practices. All parts support the -55°C to 150°C operating temperature range required for industrial applications. REACH compliance is confirmed for all substitutes.

Frequently Asked Questions (FAQ)

Q1: Can I use STD10NM60ND as a substitute for IPD60R380C6?

No. STD10NM60ND provides only 8A continuous drain current, which is below the 10.6A requirement of the original part. Additionally, the 600mOhm on-resistance significantly exceeds the 380mOhm specification. This part does not meet the primary substitution criteria for drain current capacity.

Q2: What is the difference between IPD60R380C6 and IPD60R380C6ATMA1?

Both parts are electrically identical with 600V Vdss, 10.6A continuous drain current, and 380mOhm on-resistance. The difference is packaging format: IPD60R380C6 is supplied in bulk, while IPD60R380C6ATMA1 is supplied in Tape & Reel format for automated assembly. Both are discontinued or "Not For New Designs" status.

Q3: Is PJMD360N60EC_L2_00001 a suitable replacement for new designs?

Yes. PJMD360N60EC_L2_00001 is the only substitute with Active product status. It meets all primary substitution criteria: 600V Vdss, 11A continuous drain current (exceeds 10.6A), and 360mOhm on-resistance (superior to 380mOhm). The part is RoHS3 compliant with confirmed long-term availability. Gate charge of 18.7nC is lower than the original 32nC, enabling faster switching performance.

Q4: Why do some substitutes have higher gate charge than the original part?

Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Higher gate charge values result in slower switching transitions and increased gate drive power requirements. Substitutes with higher gate charge (such as FCD380N60E at 45nC) may require gate drive circuit optimization but remain functionally compatible if the circuit design accommodates the longer switching time.

Q5: What does "Not For New Designs" product status mean?

"Not For New Designs" indicates that the manufacturer has discontinued active development and support for the part. While existing inventory may be available, the manufacturer does not recommend using these parts in new circuit designs. Parts with this status should be used only for replacement or maintenance of existing products. For new designs, select parts with Active status such as PJMD360N60EC_L2_00001 or STD13N60M2.

Q6: Are all substitute parts compatible with the TO-252-3 DPAK footprint?

Yes. All listed substitute parts use TO-252 DPAK or TO-252AA DPAK packaging, which are mechanically and electrically compatible with the original TO-252-3 DPAK footprint. The three-lead configuration (2 leads + tab) is identical across all variants, enabling direct PCB footprint compatibility without layout modifications.

Q7: Which substitute offers the best performance for high-frequency switching applications?

PJMD360N60EC_L2_00001 offers the lowest gate charge at 18.7nC, enabling the fastest switching transitions and lowest gate drive power dissipation. This part is recommended for applications requiring high switching frequency (>100kHz) where minimizing switching losses is critical. The Active product status and confirmed long-term availability make this the optimal choice for new high-frequency designs.

Q8: Can I use STD10NM60N as a substitute if my application only requires 10A drain current?

STD10NM60N provides 10A continuous drain current, which is below the original 10.6A specification. However, if your circuit design analysis confirms that 10A is sufficient for your application, this part is electrically compatible. The 550mOhm on-resistance is higher than the original 380mOhm, resulting in increased conduction losses. STD10NM60N is Active status with 25,273 pieces in inventory, providing excellent long-term availability.

Q9: What is the significance of input capacitance (Ciss) differences among substitutes?

Input capacitance affects the gate drive circuit requirements and switching speed. Higher Ciss values require more gate charge to achieve the same switching speed. FCD380N60E has 1770pF Ciss at 25V, significantly higher than the original 700pF at 100V. This higher capacitance may require gate drive circuit optimization but does not prevent functional substitution. For applications sensitive to gate drive power or switching speed, lower Ciss values (such as AOD11S60 at 545pF) are preferred.

Q10: Are there any thermal performance differences between substitutes?

Yes. Power dissipation ratings vary significantly: AOD11S60 provides 208W, FCD380N60E provides 106W, while the original IPD60R380C6 provides 83W. Higher power dissipation ratings indicate better thermal performance and lower junction temperature rise under the same operating conditions. For applications with thermal constraints, substitutes with higher power dissipation ratings (such as STD13N60M2 at 110W or AOD11S60 at 208W) provide improved thermal margin.

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