Equivalent & Substitute Parts for IPD50R950CEATMA1

Part Overview

The IPD50R950CEATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CE series. This device is rated for 500V drain-to-source voltage with a continuous drain current of 4.3A at 25°C and maximum power dissipation of 53W. The component is packaged in TO-252-3 (DPAK) surface mount configuration.

The IPD50R950CEATMA1 has been discontinued at DiGi Electronics. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute selection must be based on electrical performance parameters and mechanical compatibility within the TO-252-3 package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	4.3	A
On-State Resistance (Rds On) @ 1.2A, 13V	950	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 100µA	3.5	V
Gate Charge (Qg) @ 10V	10.5	nC
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 100V	231	pF
Power Dissipation (Max)	53	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IPD50R950CEATMA1 are selected based on the following criteria:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must support minimum 4.3A at 25°C
On-State Resistance (Rds On): Must not exceed 950mOhm at specified gate voltage
Gate-Source Threshold Voltage (Vgs(th)): Must fall within acceptable switching range
Operating Temperature Range: Must support -55°C to 150°C
Maximum Gate-Source Voltage: Must support ±20V

Mechanical Compatibility Requirements:

Package Type: TO-252-3 (DPAK, SC-63) surface mount configuration
Pin configuration: 2 Leads + Tab

Regulatory Compliance:

RoHS3 Compliant
REACH Unaffected
ECCN: EAR99

The substitute parts identified meet these criteria with variations in gate charge, input capacitance, and specific on-state resistance measurement conditions that remain within acceptable operational parameters for this device category.

Parameter Comparison

Parameter	IPD50R950CEATMA1	SPD04N50C3ATMA1	IPD50R950CEAUMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	—
Vdss	500	500	500	V
Id @ 25°C	4.3	4.5	4.3	A
Rds On (Max)	950 @ 1.2A, 13V	950 @ 2.8A, 10V	950 @ 1.2A, 13V	mOhm
Vgs(th) (Max)	3.5 @ 100µA	3.9 @ 200µA	3.5 @ 100µA	V
Qg (Max) @ 10V	10.5	22	10.5	nC
Ciss (Max)	231 @ 100V	470 @ 25V	231 @ 100V	pF
Power Dissipation (Max)	53	50	53	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Discontinued at DiGi Electronics	Not For New Designs	Active	—

Engineering Selection Recommendations

IPD50R950CEAUMA1 (Parametric Equivalent)

This part is the primary equivalent for the IPD50R950CEATMA1. It maintains identical electrical specifications including Vdss (500V), Id (4.3A), Rds On (950mOhm @ 1.2A, 13V), Vgs(th) (3.5V @ 100µA), and Qg (10.5nC @ 10V). The IPD50R950CEAUMA1 is currently Active in product status and available in higher inventory quantities (5,246 pcs). Both parts belong to the CoolMOS™ CE series and share the same base product number (IPD50R950). Packaging differs only in supplier designation (PG-TO252-3 versus PG-TO252-3-344), with both conforming to TO-252-3 mechanical specifications. This part is suitable for direct replacement in existing designs.

SPD04N50C3ATMA1 (Manufacturer Recommended Substitute)

This part is designated as the manufacturer-recommended substitute. It meets the core voltage and current requirements (500V Vdss, 4.5A Id) with identical Rds On specification (950mOhm). Key differences include higher gate charge (22nC versus 10.5nC) and higher input capacitance (470pF versus 231pF), which may affect switching speed and gate drive requirements. The SPD04N50C3ATMA1 is rated "Not For New Designs" but remains available in substantial inventory (250,402 pcs). This part is suitable for legacy system maintenance and repair applications where component availability is prioritized.

Regulatory and Compliance Considerations

All three parts are ROHS3 Compliant, REACH Unaffected, and classified under ECCN EAR99. Selection between active and discontinued parts should be based on design phase (new designs should use IPD50R950CEAUMA1) and application requirements.

Frequently Asked Questions (FAQ)

Q: Can the IPD50R950CEAUMA1 be used as a direct replacement for the IPD50R950CEATMA1?

A: Yes. The IPD50R950CEAUMA1 is a parametric equivalent with identical electrical specifications. Both parts share the same Vdss (500V), Id (4.3A), Rds On (950mOhm @ 1.2A, 13V), gate charge (10.5nC), and input capacitance (231pF). Both are packaged in TO-252-3 (DPAK) surface mount configuration. The primary difference is product status (Active versus Discontinued) and supplier package designation.

Q: What are the key differences between the SPD04N50C3ATMA1 and the original part?

A: The SPD04N50C3ATMA1 maintains voltage and current ratings (500V, 4.5A) and on-state resistance (950mOhm). However, it exhibits higher gate charge (22nC versus 10.5nC) and higher input capacitance (470pF versus 231pF). These differences may require adjustment of gate drive circuit timing and current capacity. The SPD04N50C3ATMA1 is from the CoolMOS™ series (not CE variant) and carries "Not For New Designs" status.

Q: Are all substitute parts compatible with the same PCB layout?

A: Yes. All three parts use the TO-252-3 (DPAK, SC-63) package with identical pin configuration (2 Leads + Tab). PCB footprints and thermal pad designs are mechanically compatible. No layout modifications are required for substitution.

Q: What is the significance of the higher gate charge in the SPD04N50C3ATMA1?

A: Gate charge (Qg) of 22nC versus 10.5nC indicates that the SPD04N50C3ATMA1 requires approximately twice the gate charge for switching. This affects gate drive circuit design, particularly in high-frequency applications. Gate drive current capacity and timing must be verified for compatibility with existing driver circuits.

Q: Which part should be selected for new product designs?

A: The IPD50R950CEAUMA1 should be selected for new designs. It is the only part with Active product status and provides identical electrical performance to the original IPD50R950CEATMA1. This ensures long-term component availability and design stability.

Q: Are moisture sensitivity levels different between the parts?

A: Yes. The IPD50R950CEATMA1 and IPD50R950CEAUMA1 both have MSL 3 (168 Hours), while the SPD04N50C3ATMA1 has MSL 1 (Unlimited). This indicates the SPD04N50C3ATMA1 has lower moisture sensitivity and may be more suitable for applications with extended storage or high-humidity environments.

Q: Can the SPD04N50C3ATMA1 be used in applications requiring the lower gate charge of the original part?

A: The SPD04N50C3ATMA1 can be used if the gate drive circuit is capable of supplying the higher gate charge (22nC). Applications with fixed gate drive current or timing constraints may require circuit redesign. Verification of gate drive performance is necessary before implementation.

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