IPD50R520CPATMA1 Equivalent & Substitute Parts

Part Overview

The IPD50R520CPATMA1 is an N-Channel 500 V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CP series. This device is rated for 7.1 A continuous drain current and 66 W power dissipation, housed in a TO-252-3 DPAK surface mount package. The part is classified as obsolete, necessitating identification of active equivalent components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while conforming to the same package footprint and compliance standards.

Substiute Parts

IPD50R520CPATMA1

Infineon TechnologiesIn Stock: 2700IPD50R520CPATMA1 Datasheet

Current PartRFQ

STD11NM50N

STMicroelectronicsIn Stock: 37230STD11NM50N Datasheet

MFR RecommendedRFQ

STD9NM50N

STMicroelectronicsIn Stock: 10120STD9NM50N Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPD50R520CPATMA1 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 500 V minimum
• Package Type: TO-252-3 DPAK surface mount configuration
• FET Type: N-Channel MOSFET technology
• RoHS3 Compliance and MSL Level 1 rating

Performance Alignment Parameters:

• Continuous Drain Current (Id): Equal to or greater than 7.1 A
• On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation: Equal to or greater than 66 W capability

The identified substitute parts STD11NM50N and STD9NM50N are both manufactured by STMicroelectronics and meet the mandatory voltage, package, and compliance requirements. STD11NM50N provides enhanced current handling (8.5 A) and reduced on-state resistance (470 mOhm), making it suitable for applications requiring higher performance margins. STD9NM50N offers lower current rating (5 A) and higher on-state resistance (790 mOhm), appropriate for applications with reduced current demands.

Parameter Comparison

Engineering Selection Recommendations

STD11NM50N Selection Criteria: STD11NM50N is recommended for applications where the original IPD50R520CPATMA1 operates near or at maximum current specifications. This substitute provides 8.5 A continuous drain current, exceeding the main part's 7.1 A rating, and delivers improved on-state resistance of 470 mOhm compared to 520 mOhm. Power dissipation capability is rated at 70 W, providing a 4 W margin above the original specification. The part maintains active product status with full RoHS3 compliance and MSL Level 1 rating, ensuring long-term availability and supply chain stability. Gate charge is marginally higher at 19 nC, introducing negligible switching loss increase in typical applications.

STD9NM50N Selection Criteria: STD9NM50N is suitable for applications where current demand is lower than the original part's 7.1 A specification. This substitute is rated for 5 A continuous drain current with higher on-state resistance of 790 mOhm and reduced power dissipation of 45 W. The lower gate charge of 14 nC provides improved switching efficiency. This part is appropriate for cost-optimized designs where the reduced current rating does not compromise circuit performance. Active product status and full compliance certifications ensure procurement viability.

Compliance and Availability: Both substitute parts maintain RoHS3 compliance and MSL Level 1 moisture sensitivity ratings, matching the original part's environmental and regulatory requirements. Both are manufactured by STMicroelectronics and carry active product status, ensuring sustained availability and technical support. Inventory levels are substantially higher than the obsolete main part, supporting immediate procurement.

Frequently Asked Questions (FAQ)

Q: Can STD11NM50N directly replace IPD50R520CPATMA1 in existing designs?

A: Yes. STD11NM50N maintains identical voltage rating (500 V), package footprint (TO-252-3 DPAK), and pin configuration. The higher current rating (8.5 A vs. 7.1 A) and improved on-state resistance (470 mOhm vs. 520 mOhm) provide enhanced performance margins. No circuit modifications are required for direct substitution.

Q: What are the thermal implications of switching to STD11NM50N?

A: STD11NM50N exhibits lower on-state resistance (470 mOhm vs. 520 mOhm), resulting in reduced conduction losses and lower junction temperature under identical current conditions. Power dissipation capability is rated at 70 W compared to 66 W for the original part, providing additional thermal headroom.

Q: Is STD9NM50N suitable for all applications using IPD50R520CPATMA1?

A: STD9NM50N is suitable only for applications where continuous drain current does not exceed 5 A. The higher on-state resistance (790 mOhm vs. 520 mOhm) and lower power dissipation rating (45 W vs. 66 W) make this substitute inappropriate for designs operating at or near the original part's 7.1 A specification. Verify circuit current requirements before selection.

Q: Are there package compatibility concerns with these substitutes?

A: No. All three parts use identical TO-252-3 DPAK surface mount packaging with the same pin configuration and footprint. PCB layout modifications are not required.

Q: Do the substitute parts meet the same compliance standards as IPD50R520CPATMA1?

A: Yes. Both STD11NM50N and STD9NM50N are RoHS3 compliant with MSL Level 1 moisture sensitivity ratings, matching the original part's environmental and regulatory certifications. REACH status is unaffected for all parts.

Q: What is the impact of higher gate charge in STD11NM50N?

A: Gate charge for STD11NM50N is 19 nC compared to 17 nC for the original part. This 2 nC increase results in marginally higher gate drive energy and switching time. In most applications, this difference is negligible and does not require gate driver circuit modifications.

Q: How do the operating temperature ranges compare?

A: The original IPD50R520CPATMA1 specifies -55 to 150 °C operating range. Both substitutes specify 150 °C maximum junction temperature. For applications requiring operation below -55 °C, verify substitute part datasheets for extended low-temperature specifications.