IPD50R520CP Equivalent & Substitute Parts

Part Overview

The IPD50R520CP is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 500V drain-to-source voltage with 7.1A continuous drain current. This device is packaged in TO-252-3 (DPAK) surface mount configuration and belongs to the CoolMOS™ CP series. The part is classified as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	7.1	A
On-State Resistance (Rds On) @ 3.8A, 10V	520	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Gate Charge (Qg) @ 10V	17	nC
Power Dissipation (Max)	66	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD50R520CP is based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 500V Vdss rating to ensure safe operation in the same circuit topology.

Current Handling: The substitute must support continuous drain current at or above 7.1A to handle the design load without thermal stress.

On-State Resistance: The Rds On value directly affects power dissipation and efficiency. Substitutes with equal or lower Rds On values maintain or improve thermal performance.

Package Compatibility: Both the main part and substitute must use TO-252-3 (DPAK) surface mount packaging to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Gate Charge and Threshold Voltage: These parameters affect switching characteristics and gate drive requirements. Substitutes must operate within compatible ranges to maintain circuit timing and reliability.

Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C to ensure performance across all environmental conditions.

The STD11NM50N from STMicroelectronics meets all these criteria as a direct substitute.

Parameter Comparison

Parameter	IPD50R520CP (Infineon)	STD11NM50N (STMicroelectronics)	Unit
Drain to Source Voltage (Vdss)	500	500	V
Continuous Drain Current (Id) @ 25°C	7.1	8.5	A
On-State Resistance (Rds On) @ 10V	520 @ 3.8A	470 @ 4.5A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	4.0	V
Gate Charge (Qg) @ 10V	17	19	nC
Power Dissipation (Max)	66	70	W
Gate Voltage (Vgs) Max	±20	±25	V
Input Capacitance (Ciss) @ Vds	680 @ 100V	547 @ 50V	pF
Package Type	TO-252-3 (DPAK)	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	Surface Mount	—
Operating Temperature Range	-55 to 150	Up to 150	°C

Engineering Selection Recommendations

Product Status Consideration: The IPD50R520CP is classified as obsolete. The STD11NM50N is an active product from STMicroelectronics, ensuring long-term availability and supply chain stability.

Compliance and Certification: Both parts carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), confirming regulatory equivalence. The STD11NM50N holds RoHS3 compliance, meeting modern environmental standards.

Electrical Performance: The STD11NM50N provides superior electrical characteristics: higher continuous drain current (8.5A vs. 7.1A), lower on-state resistance (470mOhm vs. 520mOhm), and higher power dissipation capability (70W vs. 66W). These improvements result in reduced thermal stress and improved efficiency in the same application.

Mechanical Compatibility: Both devices use identical TO-252-3 (DPAK) packaging with surface mount configuration, ensuring direct PCB layout compatibility without redesign.

Gate Drive Compatibility: The STD11NM50N operates with a slightly higher gate threshold voltage (4.0V vs. 3.5V) and accepts higher gate voltage (±25V vs. ±20V), providing greater margin in gate drive circuit design.

Frequently Asked Questions (FAQ)

Q: Can the STD11NM50N directly replace the IPD50R520CP without PCB modifications?

A: Yes. Both devices use identical TO-252-3 (DPAK) surface mount packaging. No PCB layout changes are required for mechanical or thermal interface compatibility.

Q: What is the significance of the lower Rds On value in the STD11NM50N?

A: Lower on-state resistance reduces power dissipation during conduction, resulting in lower junction temperature and improved thermal performance. This is a beneficial characteristic for direct substitution.

Q: Are there any gate drive circuit adjustments needed when switching from IPD50R520CP to STD11NM50N?

A: The STD11NM50N has a slightly higher gate threshold voltage (4.0V vs. 3.5V) and accepts higher maximum gate voltage (±25V vs. ±20V). Existing gate drive circuits designed for the IPD50R520CP will operate within these parameters without modification.

Q: Why is the IPD50R520CP classified as obsolete?

A: Product obsolescence is determined by the manufacturer based on market demand and technology evolution. The STD11NM50N represents the current generation equivalent from the market.

Q: Are the input capacitance values comparable between these devices?

A: The input capacitance values are measured at different Vds points (680pF @ 100V for IPD50R520CP vs. 547pF @ 50V for STD11NM50N). At equivalent operating points, these values are functionally similar and do not require circuit redesign.

Q: What is the inventory status for these parts?

A: The IPD50R520CP has 5,924 pieces in stock. The STD11NM50N has 37,200 pieces available, providing superior supply chain availability for new designs and ongoing production.

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