IPD50R399CP Equivalent & Substitute Parts

Part Overview

The IPD50R399CP is an N-Channel 500V 9A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CP series, packaged in TO-252-3 (DPAK) surface mount configuration. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part delivers 83W maximum power dissipation and features a maximum on-resistance of 399mOhm at specified conditions, making it suitable for power switching applications requiring 500V blocking capability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	9	A
On-Resistance (Rds On Max) @ 4.9A, 10V	399	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 330µA	3.5	V
Gate Charge (Qg Max) @ 10V	23	nC
Input Capacitance (Ciss Max) @ 100V	890	pF
Power Dissipation (Max)	83	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPD50R399CP is determined by the following critical parameters: Drain to Source Voltage (Vdss), Continuous Drain Current (Id), On-Resistance (Rds On), package compatibility (TO-252-3 DPAK), and surface mount configuration. Substitute parts must maintain electrical compatibility within the application's voltage and current requirements while preserving thermal and switching characteristics.

The identified substitutes are grouped as follows:

Parametric Equivalent: IPD50R399CPATMA1 (Infineon Technologies) — Identical electrical specifications with packaging variation (Tape & Reel vs. standard packaging). Active product status provides long-term availability.

Manufacturer Recommended Alternatives: STD11NM50N and STD13N60M2 (STMicroelectronics) — These parts share the same package footprint and voltage class but exhibit variations in current rating, on-resistance, and power dissipation characteristics. Selection depends on application margin requirements.

Parameter Comparison

Parameter	IPD50R399CP	IPD50R399CPATMA1	STD11NM50N	STD13N60M2
Manufacturer	Infineon	Infineon	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	600
Id @ 25°C (A)	9	9	8.5	11
Rds On Max (mOhm)	399 @ 4.9A, 10V	399 @ 4.9A, 10V	470 @ 4.5A, 10V	380 @ 5.5A, 10V
Vgs(th) Max (V)	3.5 @ 330µA	3.5 @ 330µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	23 @ 10V	23 @ 10V	19 @ 10V	17 @ 10V
Ciss Max (pF)	890 @ 100V	890 @ 100V	547 @ 50V	580 @ 100V
Power Dissipation Max (W)	83	83	70	110
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	-55 to 150
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Obsolete	Active	Active	Active
RoHS Compliance	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPD50R399CPATMA1 is the direct parametric equivalent and primary replacement for the obsolete IPD50R399CP. This Infineon part maintains identical electrical specifications (500V, 9A, 399mOhm Rds On) and operating temperature range (-55°C to 150°C). The part is active in production with ROHS3 compliance certification, ensuring long-term supply availability and regulatory alignment. Packaging differs only in format (Tape & Reel), which does not affect electrical or thermal performance. This substitute requires no circuit redesign.

STD11NM50N (STMicroelectronics MDmesh™ II series) provides a 500V-rated alternative with 8.5A continuous current and 470mOhm on-resistance. This part is suitable for applications where the 9A rating of the original device provides design margin. The reduced power dissipation (70W vs. 83W) and lower gate charge (19nC vs. 23nC) may improve switching efficiency. However, the lower current rating and higher on-resistance require verification that application current demands do not exceed 8.5A.

STD13N60M2 (STMicroelectronics MDmesh™ II Plus series) offers higher voltage (600V) and current (11A) ratings with superior on-resistance (380mOhm) and power dissipation (110W). This part is suitable for applications requiring enhanced performance margins or operation at voltages up to 600V. The higher gate charge (17nC) and different input capacitance characteristics may affect gate drive circuit timing. Selection of this part should be based on application voltage headroom requirements and thermal design capability.

All substitute parts share identical TO-252-3 DPAK packaging and surface mount configuration, enabling direct PCB footprint compatibility without layout modification.

Frequently Asked Questions (FAQ)

Q: Can IPD50R399CPATMA1 be used as a direct drop-in replacement for IPD50R399CP?

A: Yes. IPD50R399CPATMA1 is a parametric equivalent with identical electrical specifications (500V, 9A, 399mOhm Rds On, 83W power dissipation, -55°C to 150°C operating range) and package footprint (TO-252-3 DPAK). The only difference is packaging format (Tape & Reel). No circuit modifications are required.

Q: What are the key differences between STD11NM50N and the original IPD50R399CP?

A: STD11NM50N maintains the 500V voltage rating and TO-252-3 DPAK package but differs in current rating (8.5A vs. 9A), on-resistance (470mOhm vs. 399mOhm), power dissipation (70W vs. 83W), and gate charge (19nC vs. 23nC). Applications must verify that continuous drain current does not exceed 8.5A and that the higher on-resistance is acceptable for thermal design.

Q: When should STD13N60M2 be selected over other substitutes?

A: STD13N60M2 is selected when the application requires higher voltage margin (600V vs. 500V), higher current capability (11A vs. 9A), or improved on-resistance performance (380mOhm vs. 399mOhm). The higher power dissipation rating (110W) supports designs with elevated thermal loads. Gate drive circuits must accommodate the different gate charge (17nC) and input capacitance characteristics.

Q: Are all substitute parts RoHS compliant?

A: IPD50R399CPATMA1, STD11NM50N, and STD13N60M2 are all ROHS3 compliant. The original IPD50R399CP compliance status is not specified in available documentation.

Q: Do substitute parts require PCB layout changes?

A: No. All identified substitutes use the TO-252-3 DPAK package with identical pin configuration and footprint. PCB layout remains unchanged. Thermal pad design should be verified to accommodate the different power dissipation ratings of each substitute.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge differences (23nC for IPD50R399CP/CPATMA1, 19nC for STD11NM50N, 17nC for STD13N60M2) affect gate drive circuit timing and power consumption. Lower gate charge reduces drive circuit losses and enables faster switching. Gate drive circuits must be verified to deliver adequate voltage and current for the selected device's threshold voltage and operating frequency.

Q: Can STD11NM50N and STD13N60M2 be used interchangeably?

A: No. These parts have different voltage ratings (500V vs. 600V), current ratings (8.5A vs. 11A), and on-resistance characteristics. Selection must be based on specific application voltage and current requirements. Interchangeability is not supported.

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