IPD25CNE8N G N-Channel MOSFET 85V 35A Equivalent & Substitute Parts

Part Overview

The IPD25CNE8N G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 85V drain-to-source voltage and 35A continuous drain current in the OptiMOS™ series. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part is housed in a TO-252-3 (DPAK) surface mount package suitable for power conversion and switching applications.

Substiute Parts

IPD25CNE8N G

Infineon TechnologiesIn Stock: 1119IPD25CNE8N G Datasheet

Current PartRFQ

AOD4126

Alpha & Omega Semiconductor Inc.In Stock: 15672AOD4126 Datasheet

MFR RecommendedRFQ

BUK9226-75A,118

Nexperia USA Inc.In Stock: 8416BUK9226-75A,118 Datasheet

MFR RecommendedRFQ

SQD40N10-25_GE3

Vishay SiliconixIn Stock: 3362SQD40N10-25_GE3 Datasheet

MFR RecommendedRFQ

SUD35N10-26P-GE3

Vishay SiliconixIn Stock: 6234SUD35N10-26P-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPD25CNE8N G is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel (all substitutes must be N-Channel)
• Package Type: TO-252-3 (DPAK) surface mount (all substitutes must use compatible package)
• Drain-to-Source Voltage (Vdss): Minimum 85V (substitutes rated at 100V or higher are acceptable)
• Continuous Drain Current (Id): Minimum 35A at Tc (substitutes rated at 35A or higher are acceptable)
• On-Resistance (Rds On): Maximum 25mOhm @ specified conditions (lower values are acceptable)
• Operating Temperature Range: -55°C to 175°C (substitutes must meet or exceed this range)

Secondary Compatibility Factors:

• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation capability: Higher ratings provide thermal margin
• Vgs(th) and Vgs(Max): Must be compatible with existing gate drive circuitry

All four substitute parts listed meet the primary substitution criteria and are compatible with the IPD25CNE8N G in terms of electrical and mechanical parameters.

Parameter Comparison

Engineering Selection Recommendations

AOD4126 (Alpha & Omega Semiconductor Inc.)

The AOD4126 is an active product with ROHS3 compliance. It provides 100V Vdss rating (15V margin above the main part) and 43A continuous drain current. On-resistance of 24mOhm at 20A is comparable to the IPD25CNE8N G. Power dissipation capability of 100W (Tc) exceeds the main part. This substitute is suitable for applications requiring higher voltage margin and improved thermal performance.

BUK9226-75A,118 (Nexperia USA Inc.)

The BUK9226-75A,118 is an obsolete product with ROHS3 compliance and AEC-Q101 automotive qualification. It provides 75V Vdss (10V below the main part) and 45A continuous drain current. On-resistance of 24.6mOhm at 25A is comparable. Power dissipation of 114W (Tc) provides significant thermal margin. This substitute is suitable for applications where voltage rating can be reduced and automotive-grade reliability is required.

SQD40N10-25_GE3 (Vishay Siliconix)

The SQD40N10-25_GE3 is an active product with ROHS3 compliance. It provides 100V Vdss rating and 40A continuous drain current, matching the main part's current rating within 5A. On-resistance of 25mOhm at 40A is equivalent. Power dissipation of 136W (Tc) provides the highest thermal margin among all substitutes. Gate charge of 70nC is higher than the main part, resulting in increased switching losses. This substitute is suitable for applications prioritizing thermal performance and long-term availability.

SUD35N10-26P-GE3 (Vishay Siliconix)

The SUD35N10-26P-GE3 is an active product with ROHS3 compliance. It provides 100V Vdss rating and 35A continuous drain current, exactly matching the main part's current rating. On-resistance of 26mOhm at 12A is marginally higher. Power dissipation of 83W (Tc) exceeds the main part. Gate charge of 47nC is higher than the main part. This substitute provides the closest electrical match and is recommended for direct replacement in new designs.

Frequently Asked Questions (FAQ)

Q: Can the IPD25CNE8N G be replaced with any of these four substitutes without circuit modification?

A: All four substitutes are electrically and mechanically compatible with the IPD25CNE8N G based on the provided parameters. However, the higher gate charge values in SQD40N10-25_GE3 (70nC) and SUD35N10-26P-GE3 (47nC) compared to the main part (31nC) may require gate drive circuit evaluation to ensure adequate switching speed. The BUK9226-75A,118 has a lower Vdss rating (75V vs. 85V), which reduces voltage margin and should only be used if the application circuit operates below 75V.

Q: Which substitute provides the best thermal performance?

A: The SQD40N10-25_GE3 provides the highest power dissipation rating at 136W (Tc), followed by BUK9226-75A,118 at 114W (Tc) and AOD4126 at 100W (Tc). For applications with stringent thermal requirements, SQD40N10-25_GE3 is the optimal choice.

Q: Are all substitutes available in the same package?

A: All substitutes use TO-252-3 (DPAK) or compatible variants (TO-252AA). These packages are mechanically and electrically interchangeable for PCB mounting purposes.

Q: Which substitute is recommended for new product designs?

A: SUD35N10-26P-GE3 and SQD40N10-25_GE3 are both active products with ROHS3 compliance and long-term availability. SUD35N10-26P-GE3 provides the closest electrical match to the IPD25CNE8N G with identical 35A current rating. SQD40N10-25_GE3 offers superior thermal performance if additional margin is required.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge (SQD40N10-25_GE3 at 70nC and SUD35N10-26P-GE3 at 47nC) compared to the main part (31nC) results in longer switching times and increased switching losses. Gate drive circuits must supply sufficient current to achieve the required switching frequency. Verify gate drive capability before substitution.

Q: Can the BUK9226-75A,118 be used in all applications designed for the IPD25CNE8N G?

A: The BUK9226-75A,118 has a lower Vdss rating of 75V compared to the main part's 85V. It can only be used in applications where the maximum drain-to-source voltage does not exceed 75V. Applications designed for 85V operation require either AOD4126, SQD40N10-25_GE3, or SUD35N10-26P-GE3.

Q: What compliance certifications apply to these substitutes?

A: All four substitutes are ROHS3 compliant. The BUK9226-75A,118 additionally carries AEC-Q101 automotive qualification, making it suitable for automotive applications requiring automotive-grade reliability standards.