IPD20N03L N-Channel MOSFET 30V 30A Equivalent & Substitute Parts

Part Overview

The IPD20N03L is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 30A continuous drain current in a TO-252-3 (DPAK) surface mount package. This device is part of the OptiMOS™ series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the original electrical specifications and mechanical package requirements while offering active product status and current availability.

Substiute Parts

IPD20N03L
Infineon TechnologiesIn Stock: 15381IPD20N03L Datasheet
IPD20N03L
Current Part
AOD480
Alpha & Omega Semiconductor Inc.In Stock: 19766AOD480 Datasheet
AOD480
MFR Recommended
NTD20N03L27T4G
onsemiIn Stock: 15402NTD20N03L27T4G Datasheet
NTD20N03L27T4G
MFR Recommended
RFD12N06RLESM9A
onsemiIn Stock: 7401RFD12N06RLESM9A Datasheet
RFD12N06RLESM9A
MFR Recommended
STD17NF03LT4
STMicroelectronicsIn Stock: 8802STD17NF03LT4 Datasheet
STD17NF03LT4
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 30 A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs 20 mOhm @ 15A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 2 V @ 25µA
Gate Charge (Qg Max) @ Vgs 11 nC @ 5V
Input Capacitance (Ciss Max) @ Vds 700 pF @ 25V
Power Dissipation (Max) 60 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IPD20N03L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must be ≥30V
  • Continuous Drain Current (Id): Must be ≥30A at rated conditions
  • On-Resistance (Rds On): Must not exceed the original specification to maintain thermal performance
  • Package Type: Must be TO-252-3 (DPAK) surface mount
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Parameters:

  • Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage rating
  • Gate Charge (Qg): Lower values preferred for faster switching
  • Input Capacitance (Ciss): Lower values preferred for reduced drive requirements
  • Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below are grouped based on their ability to meet or exceed these criteria while maintaining active product status and current manufacturing availability.

Parameter Comparison

Parameter IPD20N03L (Main) AOD480 NTD20N03L27T4G RFD12N06RLESM9A STD17NF03LT4
Manufacturer Infineon Alpha & Omega onsemi onsemi STMicroelectronics
Vdss (V) 30 30 30 60 30
Id @ 25°C (A) 30 (Tc) 25 (Tc) 20 (Ta) 18 (Tc) 17 (Tc)
Rds On Max (mOhm) 20 @ 15A, 10V 23 @ 20A, 10V 27 @ 10A, 5V 63 @ 18A, 10V 50 @ 8.5A, 10V
Vgs(th) Max (V) 2 @ 25µA 2.5 @ 250µA 2 @ 250µA 3 @ 250µA 2.2 @ 250µA
Qg Max (nC) 11 @ 5V 14 @ 10V 18.9 @ 10V 15 @ 10V 6.5 @ 5V
Ciss Max (pF) 700 @ 25V 820 @ 15V 1260 @ 25V 485 @ 25V 320 @ 25V
Power Dissipation Max (W) 60 (Tc) 21 (Tc) 74 (Tc) 49 (Tc) 30 (Tc)
Operating Temp Range (°C) -55 to 175 -55 to 175 -55 to 150 -55 to 175 -55 to 175
Package TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Product Status Obsolete Not For New Designs Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: NTD20N03L27T4G (onsemi)

The NTD20N03L27T4G is the preferred substitute for new designs. This device maintains the 30V Vdss rating and offers Active product status with ROHS3 compliance. While the continuous drain current is rated at 20A (Ta) compared to the original 30A (Tc), the device operates within the same voltage class and package footprint. The higher power dissipation rating of 74W (Tc) provides thermal headroom for most applications. This part is currently in active production with full manufacturing support.

Secondary Recommendation: AOD480 (Alpha & Omega Semiconductor)

The AOD480 provides a closer current rating of 25A (Tc) at 30V Vdss, maintaining better alignment with the original specification. However, this device carries a "Not For New Designs" status, making it suitable only for legacy system maintenance or production continuation of existing designs. ROHS3 compliance is confirmed.

Alternative for Higher Voltage Applications: RFD12N06RLESM9A (onsemi)

The RFD12N06RLESM9A offers a 60V Vdss rating with 18A continuous drain current. This device is appropriate only when higher voltage headroom is required beyond the original 30V specification. The higher on-resistance (63 mOhm) and lower current rating make this suitable for lower-power applications or designs requiring voltage margin. Active product status and ROHS3 compliance are confirmed.

Alternative for Lower Current Applications: STD17NF03LT4 (STMicroelectronics)

The STD17NF03LT4 maintains the 30V Vdss rating with 17A continuous drain current. This device features the lowest gate charge (6.5 nC) and input capacitance (320 pF) among all substitutes, making it suitable for applications prioritizing switching speed and drive efficiency. Active product status and ROHS3 compliance are confirmed. Operating temperature range extends to 175°C.

Compliance Considerations:

All recommended active substitutes (NTD20N03L27T4G, RFD12N06RLESM9A, STD17NF03LT4) are ROHS3 compliant, addressing the non-compliance status of the original IPD20N03L. All parts maintain REACH Unaffected status and EAR99 export classification. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all parts, indicating no special moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the AOD480 be used as a direct replacement for the IPD20N03L?

A: The AOD480 shares the same 30V Vdss rating and TO-252-3 DPAK package. However, the continuous drain current is rated at 25A (Tc) versus the original 30A (Tc), representing a 17% reduction in current capacity. The AOD480 carries a "Not For New Designs" status, limiting its use to legacy production support. For new designs, NTD20N03L27T4G is preferred.

Q: What is the primary limitation of the NTD20N03L27T4G as a substitute?

A: The NTD20N03L27T4G is rated for 20A (Ta) continuous drain current, which is lower than the original 30A (Tc) specification. The operating temperature range extends only to 150°C versus 175°C for the original part. These parameters must be evaluated against the thermal and current requirements of the specific application.

Q: Why does the RFD12N06RLESM9A have a higher on-resistance despite being from an active product line?

A: The RFD12N06RLESM9A is rated for 60V Vdss, which is double the original 30V specification. Higher voltage-rated MOSFETs inherently exhibit higher on-resistance due to the thicker drift region required to support the higher voltage. This device is suitable only for applications requiring voltage margin beyond 30V.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed are packaged in TO-252-3 (DPAK, SC-63) surface mount format, maintaining mechanical compatibility with the original IPD20N03L. Pin configuration and thermal tab placement are identical across all parts.

Q: What is the significance of the gate charge (Qg) differences among substitutes?

A: Gate charge directly affects switching speed and gate drive power requirements. The STD17NF03LT4 features the lowest gate charge at 6.5 nC, enabling faster switching and reduced driver power dissipation. The NTD20N03L27T4G exhibits higher gate charge at 18.9 nC, requiring more robust gate drive circuitry but offering lower input capacitance.

Q: Can the STD17NF03LT4 handle the full 30A current requirement?

A: The STD17NF03LT4 is rated for 17A (Tc) continuous drain current, which is insufficient for applications requiring the full 30A capacity of the original IPD20N03L. This device is suitable only for applications with reduced current requirements or where switching performance is prioritized over current capacity.

Q: What compliance advantages do the active substitutes offer over the original IPD20N03L?

A: All active substitute parts (NTD20N03L27T4G, RFD12N06RLESM9A, STD17NF03LT4) are ROHS3 compliant, whereas the original IPD20N03L is RoHS non-compliant. This compliance status is critical for applications subject to environmental regulations in the European Union and other regions enforcing RoHS directives.

Q: How should thermal performance be evaluated when selecting a substitute?

A: Thermal performance depends on both the on-resistance (Rds On) and the power dissipation rating. Lower on-resistance reduces I²R losses. The power dissipation rating indicates the maximum heat the device can dissipate under specified conditions. Application-specific thermal analysis must account for junction temperature, case temperature, and ambient conditions to ensure the selected substitute operates within safe limits.

Q: Is the NTD20N03L27T4G suitable for all applications currently using the IPD20N03L?

A: The NTD20N03L27T4G is suitable for applications where the 20A (Ta) continuous drain current meets or exceeds the actual circuit requirements. Applications requiring the full 30A capacity of the original part must evaluate alternative substitutes or confirm that peak current demands do not exceed the NTD20N03L27T4G rating under worst-case thermal conditions.

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