IPD135N03LGXT N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IPD135N03LGXT is an N-Channel 30V 30A surface mount MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is rated for 31W power dissipation and operates across a temperature range of -55°C to 175°C. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating available packaging and product status options.

Substiute Parts

IPD135N03LGXT

Infineon TechnologiesIn Stock: 1084IPD135N03LGXT Datasheet

Current PartRFQ

IPD135N03LGATMA1

Infineon TechnologiesIn Stock: 32529IPD135N03LGATMA1 Datasheet

Parametric EquivalentRFQ

BUK9214-30A,118

Nexperia USA Inc.In Stock: 18336BUK9214-30A,118 Datasheet

MFR RecommendedRFQ

DMN3016LK3-13

Diodes IncorporatedIn Stock: 30777DMN3016LK3-13 Datasheet

MFR RecommendedRFQ

SUD50N03-06AP-E3

Vishay SiliconixIn Stock: 6547SUD50N03-06AP-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPD135N03LGXT is determined by the following critical parameters:

Primary Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal 30V
• Package Type: Must be TO-252-3 (DPAK) or equivalent surface mount configuration
• Mounting Type: Must be surface mount
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)

Secondary Performance Criteria:

• Continuous Drain Current (Id): Substitute must meet or exceed 30A at 25°C
• Rds On (Max): Substitute must not exceed 13.5 mOhm at rated current and 10V gate drive
• Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range (approximately 2.0V to 2.4V @ 250µA)
• Operating Temperature Range: Must support -55°C to 175°C minimum
• Power Dissipation: Substitute must support thermal requirements of the application

Substitutes are grouped into three categories based on their relationship to the main part: parametric equivalents (identical electrical specifications), manufacturer-recommended alternatives (functionally compatible with performance enhancements), and functional substitutes (compatible within application constraints).

Parameter Comparison

Engineering Selection Recommendations

IPD135N03LGATMA1 (Infineon Technologies)

This part is the primary parametric equivalent to the IPD135N03LGXT. It maintains identical electrical specifications including 30V Vdss, 30A continuous drain current, and 13.5 mOhm Rds On. The critical distinction is product status: IPD135N03LGATMA1 is active and available in high inventory (32,490 pcs), whereas the original part is obsolete. This substitute is packaged in Tape & Reel format and is ROHS3 compliant. For applications requiring direct electrical replacement with assured long-term availability, this is the recommended first choice.

SUD50N03-06AP-E3 (Vishay Siliconix)

This part exceeds the performance envelope of the original device with 90A continuous drain current and superior on-resistance (5.7 mOhm @ 20A, 10V). It maintains 30V Vdss and TO-252-3 package compatibility. The higher current rating and lower on-resistance provide thermal and efficiency advantages in power conversion applications. However, the significantly higher gate charge (95 nC vs. 10 nC) and input capacitance (3800 pF vs. 1000 pF) may require gate drive circuit adjustments. This part is active and ROHS3 compliant with 6,529 pcs in stock.

BUK9214-30A,118 (Nexperia USA Inc.)

This part offers the highest current rating (63A) and power dissipation capability (107W) among the substitutes. It maintains 30V Vdss and TO-252-3 package compatibility. The on-resistance is 12 mOhm @ 25A, 10V, which is acceptable for the original 30A application. This device includes AEC-Q101 automotive qualification and is ROHS3 compliant. However, it is listed as obsolete. The significantly higher gate charge (31 nC) and input capacitance (2317 pF) require consideration in gate drive design.

DMN3016LK3-13 (Diodes Incorporated)

This part is not recommended as a direct substitute. While it maintains 30V Vdss and TO-252-3 package compatibility, the continuous drain current rating of 12.4A is substantially below the original 30A specification. The power dissipation rating of 1.6W (Ta) is insufficient for applications requiring the full 30A capability. This part is suitable only for applications with reduced current requirements below 12.4A. It is active and ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can IPD135N03LGATMA1 be used as a direct replacement for IPD135N03LGXT?

A: Yes. IPD135N03LGATMA1 is a parametric equivalent with identical electrical specifications: 30V Vdss, 30A continuous drain current, 13.5 mOhm Rds On @ 30A, 10V, and 31W power dissipation. The primary difference is product status (active vs. obsolete) and packaging format (Tape & Reel vs. standard). No circuit modifications are required.

Q: What is the difference between the two Infineon parts?

A: IPD135N03LGXT and IPD135N03LGATMA1 are electrically identical. The suffix "ATMA1" indicates the Tape & Reel packaging variant. IPD135N03LGATMA1 is the active production version with superior availability (32,490 pcs in stock vs. 997 pcs for the obsolete part).

Q: Why does SUD50N03-06AP-E3 have lower on-resistance but higher gate charge?

A: Lower on-resistance (5.7 mOhm vs. 13.5 mOhm) is achieved through advanced die design and larger silicon area, which inherently increases gate charge and input capacitance. The trade-off reduces conduction losses but increases switching losses and gate drive power requirements. Circuit evaluation is necessary to determine if the overall efficiency benefit justifies gate drive modifications.

Q: Is BUK9214-30A,118 suitable for the original 30A application?

A: BUK9214-30A,118 can handle 30A operation, but it is rated for 63A continuous current. The on-resistance of 12 mOhm @ 25A is acceptable. However, this part is obsolete, limiting long-term procurement viability. For new designs, SUD50N03-06AP-E3 or IPD135N03LGATMA1 are preferred.

Q: Can DMN3016LK3-13 replace the IPD135N03LGXT?

A: No. DMN3016LK3-13 is rated for only 12.4A continuous drain current, which is insufficient for applications requiring 30A operation. This part is suitable only for applications with current requirements below 12.4A. Using this part in a 30A application will result in thermal failure.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts (IPD135N03LGATMA1, DMN3016LK3-13, and SUD50N03-06AP-E3) are ROHS3 compliant. BUK9214-30A,118 is also ROHS3 compliant but is obsolete. The original IPD135N03LGXT does not specify RoHS status.

Q: What packaging formats are available for these substitutes?

A: IPD135N03LGATMA1 is supplied in Tape & Reel (TR) format. SUD50N03-06AP-E3 is supplied in Tape & Reel (TR) format. BUK9214-30A,118 is supplied in Cut Tape (CT) format. DMN3016LK3-13 is supplied in Tape & Reel (TR) format. All maintain TO-252-3 (DPAK) package compatibility.

Q: Do gate drive circuits require modification when switching to SUD50N03-06AP-E3?

A: Gate charge increases from 10 nC to 95 nC, and input capacitance increases from 1000 pF to 3800 pF. These parameters affect gate drive current requirements and switching speed. Circuit simulation or testing is recommended to verify gate drive adequacy, particularly in high-frequency switching applications.

Q: What is the inventory status of each substitute?

A: IPD135N03LGATMA1: 32,490 pcs (highest availability). SUD50N03-06AP-E3: 6,529 pcs. BUK9214-30A,118: 18,285 pcs. DMN3016LK3-13: 30,700 pcs. IPD135N03LGXT (original): 997 pcs (obsolete).