Equivalent & Substitute Parts Reference for IPD12N03LB G

Part Overview

The IPD12N03LB G, manufactured by Infineon Technologies, is an N-Channel MOSFET with 30V drain-to-source voltage and 30A (Tc) continuous drain current. It features a low maximum Rds On, fast switching, and is housed in a surface-mount PG-TO252-3-11 package. The part is listed as obsolete, making it necessary to identify equivalent and substitute MOSFETs with comparable electrical and mechanical characteristics to ensure ongoing design or repair viability in applications that previously utilized this device.

Key Parameters

Parameter	IPD12N03LB G
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Part Status	Obsolete

Substitute Part Grouping Explanation

Substitution is determined by matching critical parameters within the category of Transistors, FETs, MOSFETs. Key parameters for equivalency include: FET Type (N-Channel), Technology (MOSFET), Drain to Source Voltage (Vdss), Current - Continuous Drain (Id), Drive Voltage range, maximum Rds On, Vgs(th) (Max), maximum Vgs, input capacitance (Ciss), maximum power dissipation (Pd), operating temperature range, mounting type, and package compatibility. Substitutes must meet or exceed requirements of these specified parameters for direct replacement in existing designs.

Parameter Comparison

Part Number	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	Moisture Sensitivity Level (MSL)	REACH Status	ECCN	HTSUS	Part Status
IPD12N03LB G	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	11.6mOhm @ 30A, 10V	2V @ 20µA	11 nC @ 5 V	±20V	1300 pF @ 15 V	52W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63	1 (Unlimited)	REACH Unaffected	EAR99	8541.29.0095	Obsolete
ATP202-TL-H	N-Channel	MOSFET (Metal Oxide)	30 V	50A (Ta)	4.5V, 10V	12mOhm @ 25A, 10V	-	27 nC @ 10 V	±20V	1650 pF @ 10 V	40W (Tc)	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 Leads+Tab)	1 (Unlimited)	REACH Unaffected	EAR99	8541.29.0095	Obsolete
DMN3016LK3-13	N-Channel	MOSFET (Metal Oxide)	30 V	12.4A (Ta)	4.5V, 10V	12mOhm @ 11A, 10V	2.3V @ 250µA	25.1 nC @ 10 V	±20V	1415 pF @ 15 V	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63	1 (Unlimited)	REACH Unaffected	EAR99	8541.29.0095	Active

Engineering Selection Recommendations

Select substitute MOSFETs for IPD12N03LB G by ensuring inventory status aligns with project continuity needs. ATP202-TL-H and DMN3016LK3-13 meet key compliance standards: Moisture Sensitivity Level 1 (Unlimited), REACH Unaffected, and ECCN EAR99. Main part and both substitutes have matching REACH and ECCN classifications, reducing regulatory risk for substitution. Package and status should be checked against project requirements for exact fit and lifecycle management.

Frequently Asked Questions (FAQ)

Q1: What are the most critical parameters for substituting IPD12N03LB G MOSFETs?
A1: Essential parameters include FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), maximum on-resistance (Rds On), drive voltage, gate charge, Vgs(max), power dissipation, input capacitance, operating temperature range, mounting type, and package compatibility.

Q2: Are package types identical among all substitutes?
A2: Both IPD12N03LB G and DMN3016LK3-13 use TO-252-3 type packages. ATP202-TL-H uses ATPAK, a distinct surface mount package. Mechanical compatibility must be assessed for ATP202-TL-H in existing footprints.

Q3: Do all substitutes comply with the same environmental and trade regulations?
A3: All listed parts have Moisture Sensitivity Level 1 (Unlimited), REACH Unaffected status, and share ECCN EAR99, aligning with standard regulatory and handling requirements.

Q4: How does power dissipation compare between IPD12N03LB G and its substitutes?
A4: IPD12N03LB G offers 52W (Tc) maximum power dissipation. ATP202-TL-H provides 40W (Tc), and DMN3016LK3-13 has 1.6W (Ta). Power dissipation capacity must be matched to application needs.

Q5: Is the operating temperature range consistent across these MOSFETs?
A5: IPD12N03LB G and DMN3016LK3-13 cover -55°C; DMN3016LK3-13 and ATP202-TL-H have a maximum of 150°C, while IPD12N03LB G has up to 175°C. Confirm operating environment for selection suitability.

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