IPD09N03LA G Equivalent & Substitute Parts

Part Overview

The IPD09N03LA G is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 25V drain-to-source voltage with 50A continuous drain current and 63W maximum power dissipation in a TO-252-3 surface mount package. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IPD09N03LA G
Infineon TechnologiesIn Stock: 1425IPD09N03LA G Datasheet
IPD09N03LA G
Current Part
IPD090N03LGATMA1
Infineon TechnologiesIn Stock: 5417IPD090N03LGATMA1 Datasheet
IPD090N03LGATMA1
Direct
FDD8880
onsemiIn Stock: 35476FDD8880 Datasheet
FDD8880
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 25 V
Continuous Drain Current (Id) @ 25°C 50 A (Tc)
On-Resistance (Rds On Max) @ 30A, 10V 8.6 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 20µA 2 V
Power Dissipation (Max) 63 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3 (DPAK) Surface Mount
Gate Charge (Qg Max) @ 5V 13 nC
Input Capacitance (Ciss Max) @ 15V 1642 pF

Substitute Part Grouping Explanation

Substitution eligibility for the IPD09N03LA G is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 25V to ensure safe operation in circuits designed for this device.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 50A at 25°C to maintain circuit performance specifications.

On-Resistance Characteristics: Rds On values must be comparable to ensure thermal performance and power dissipation remain within acceptable limits for the application.

Package Compatibility: All substitutes must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Temperature Range: Operating temperature range must span -55°C to 175°C to maintain functional equivalence across environmental conditions.

Gate Drive Voltage: Drive voltage specifications (4.5V and 10V) must be maintained for compatibility with existing gate driver circuits.

The identified substitute parts meet these criteria with the following considerations:

IPD090N03LGATMA1 (Infineon Technologies): Rated for 30V/40A with active product status. Voltage rating exceeds minimum requirement; continuous current is 10A lower than original specification.

FDD8880 (onsemi): Rated for 30V with 58A continuous current (Tc) and active product status. Exceeds both voltage and current requirements; represents higher performance alternative.

Parameter Comparison

Parameter IPD09N03LA G IPD090N03LGATMA1 FDD8880 Unit
Manufacturer Infineon Technologies Infineon Technologies onsemi
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 30 30 V
Continuous Drain Current (Id) @ 25°C 50 40 58 A (Tc)
Rds On (Max) @ Id, Vgs 8.6 @ 30A, 10V 9 @ 30A, 10V 9 @ 35A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) 2 @ 20µA 2.2 @ 250µA 2.5 @ 250µA V
Gate Charge (Qg Max) @ Vgs 13 @ 5V 15 @ 10V 31 @ 10V nC
Input Capacitance (Ciss Max) @ 15V 1642 1600 1260 pF
Power Dissipation (Max) 63 42 55 W (Tc)
Operating Temperature Range -55 to 175 -55 to 175 -55 to 175 °C (TJ)
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Vgs (Max) ±20 ±20 ±20 V
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IPD090N03LGATMA1 Selection Criteria:

This Infineon Technologies substitute is classified as active product status, ensuring long-term availability and manufacturing support. The 30V voltage rating provides 5V margin above the original 25V specification, suitable for applications with moderate voltage headroom requirements. The 40A continuous current rating is 10A below the original specification; this part is appropriate for designs where the actual operating current does not exceed 40A. On-resistance characteristics (9 mOhm @ 30A, 10V) are comparable to the original device. ROHS3 compliance and REACH unaffected status meet current regulatory requirements. Tape & Reel packaging supports automated assembly processes.

FDD8880 Selection Criteria:

This onsemi PowerTrench® MOSFET is classified as active product status with robust long-term availability. The 30V voltage rating and 58A continuous current (Tc) exceed both original specifications, providing performance margin for high-current applications. The 9 mOhm on-resistance @ 35A, 10V demonstrates efficient switching characteristics. Higher gate charge (31 nC @ 10V) compared to the original (13 nC @ 5V) requires verification of gate driver capability. ROHS3 compliance and REACH unaffected status satisfy regulatory requirements. Cut Tape & Digi-Reel® packaging supports both manual and automated assembly.

Regulatory Compliance:

Both substitute parts maintain REACH unaffected status and MSL 1 (unlimited) moisture sensitivity rating, consistent with the original device. FDD8880 and IPD090N03LGATMA1 both carry ROHS3 compliance certification, meeting modern environmental standards.

Frequently Asked Questions (FAQ)

Q: Can IPD090N03LGATMA1 directly replace IPD09N03LA G in all applications?

A: IPD090N03LGATMA1 is suitable for applications where continuous drain current does not exceed 40A. The higher 30V voltage rating is compatible with 25V-rated circuits. Verify that the actual operating current in your application remains at or below 40A before substitution.

Q: What is the primary difference between IPD090N03LGATMA1 and FDD8880?

A: IPD090N03LGATMA1 is manufactured by Infineon Technologies with 40A continuous current rating. FDD8880 is manufactured by onsemi with 58A continuous current rating and higher gate charge (31 nC vs. 15 nC). FDD8880 is suitable for higher-current applications but requires verification of gate driver compatibility due to increased gate charge.

Q: Are all three parts compatible with the same PCB layout?

A: Yes. All three parts use the TO-252-3 (DPAK) surface mount package with identical pin configuration and mechanical dimensions, ensuring direct PCB compatibility without layout modifications.

Q: Does the higher voltage rating (30V) of the substitutes affect circuit operation?

A: No. MOSFETs with higher voltage ratings operate safely in circuits designed for lower voltages. The 30V rating of both substitutes provides additional voltage margin and does not negatively impact performance in 25V-rated applications.

Q: What is the impact of gate charge differences on gate driver selection?

A: IPD090N03LGATMA1 has 15 nC gate charge @ 10V; FDD8880 has 31 nC @ 10V. Higher gate charge requires more current from the gate driver to achieve the same switching speed. Verify that your existing gate driver can supply sufficient current for the selected substitute, particularly for FDD8880.

Q: Are there packaging format differences between the substitutes?

A: IPD090N03LGATMA1 is supplied in Tape & Reel (TR) format. FDD8880 is supplied in Cut Tape (CT) & Digi-Reel® format. Both formats are compatible with standard pick-and-place assembly equipment. Select based on your procurement and assembly process requirements.

Q: What is the significance of "Active" product status for the substitutes?

A: Active product status indicates that both IPD090N03LGATMA1 and FDD8880 are in current production with guaranteed long-term availability, manufacturing support, and technical documentation. This contrasts with the obsolete status of IPD09N03LA G, which has reached end-of-life.

Q: Can I use FDD8880 in applications requiring exactly 50A continuous current?

A: Yes. FDD8880 is rated for 58A continuous current (Tc), which exceeds the 50A requirement. This provides 8A performance margin and is suitable for the application.

Q: Are thermal characteristics comparable between the three parts?

A: Power dissipation ratings differ: IPD09N03LA G (63W), IPD090N03LGATMA1 (42W), and FDD8880 (55W). Verify that thermal management in your application accommodates the power dissipation of your selected substitute. Lower power dissipation may indicate improved efficiency or different thermal measurement conditions.

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