Equivalent & Substitute Parts for IPD079N06L3GBTMA1

Part Overview

The IPD079N06L3GBTMA1 is an N-Channel 60V 50A MOSFET manufactured by Infineon Technologies in the OptiMOS™ series, housed in a TO-252-3 (DPAK) surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant with unlimited moisture sensitivity rating.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
On-Resistance (Rds On) @ 50A, 10V	7.9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 34µA	2.2	V (Max)
Gate Charge (Qg) @ 4.5V	29	nC (Max)
Input Capacitance (Ciss) @ 30V	4900	pF (Max)
Power Dissipation (Max)	79	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPD079N06L3GBTMA1 is determined by the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 60V (exact match required)
Continuous Drain Current (Id): 50A minimum at Tc rating
Package Type: TO-252-3 (DPAK) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
RoHS3 Compliance and MSL Level 1 rating

Secondary Compatibility Parameters:

On-Resistance (Rds On): Values within acceptable thermal and efficiency margins
Gate Threshold Voltage (Vgs(th)): Compatible gate drive voltage requirements
Gate Charge (Qg): Acceptable for existing gate driver circuits
Input Capacitance (Ciss): Suitable for circuit switching characteristics

Substitute parts are classified into two categories:

Category 1: Parametric Equivalents — Parts with identical or superior electrical specifications and active product status, suitable for direct replacement without circuit modification.

Category 2: Functional Substitutes — Parts meeting core voltage and current ratings with acceptable performance trade-offs in secondary parameters, requiring design verification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 25-50V (pF)	Power Diss (W)	Status
IPD079N06L3GBTMA1	Infineon	60	50	7.9	2.2	29	4900	79	Obsolete
IPD079N06L3GATMA1	Infineon	60	50	7.9	2.2	29	4900	79	Active
IRLR3636TRLPBF	Infineon	60	50	6.8	2.5	49	3779	143	Active
IRFR1018ETRPBF	Infineon	60	56	8.4	4.0	69	2290	110	Active
SUD50N06-09L-E3	Vishay Siliconix	60	50	9.3	3.0	70	2650	136	Active
SQD50N06-09L_GE3	Vishay Siliconix	60	50	9.0	2.5	72	3065	136	Active
FDD10AN06A0	onsemi	60	50	10.5	4.0	37	1840	135	Active
STD70N6F3	STMicroelectronics	60	70	10.5	4.0	35	2200	110	Obsolete
TK60S06K3L(T6L1,NQ	Toshiba	60	60	8.0	3.0	60	2900	88	Active

Engineering Selection Recommendations

Recommended Primary Substitute: IPD079N06L3GATMA1

The IPD079N06L3GATMA1 is the direct parametric equivalent of the obsolete IPD079N06L3GBTMA1. This part maintains identical electrical specifications across all critical parameters: 60V Vdss, 50A continuous drain current, 7.9mOhm Rds On at 10V, and 79W power dissipation. The device is manufactured by Infineon Technologies within the same OptiMOS™ series and carries active product status. Packaging is TO-252-3 (DPAK) surface mount. RoHS3 compliance and MSL Level 1 rating are maintained. This substitution requires no circuit modification and provides full functional compatibility.

Secondary Substitutes for Active Procurement:

IRLR3636TRLPBF (Infineon HEXFET®) — Meets 60V/50A core requirements with superior on-resistance of 6.8mOhm at 10V, resulting in lower power dissipation and improved thermal performance. Higher power dissipation rating (143W) provides additional thermal margin. Gate charge is elevated at 49nC, requiring verification of gate driver capability. Active product status with high inventory availability.

SUD50N06-09L-E3 (Vishay Siliconix TrenchFET®) — Maintains 60V/50A specifications with 9.3mOhm Rds On. Gate threshold voltage of 3.0V is elevated compared to the original 2.2V, requiring gate drive circuit compatibility assessment. Power dissipation of 136W exceeds original specification. Active status with substantial inventory.

SQD50N06-09L_GE3 (Vishay Siliconix TrenchFET®) — Equivalent 60V/50A ratings with 9.0mOhm Rds On and 136W power dissipation. Gate threshold of 2.5V is closer to original specification. Active product status.

TK60S06K3L(T6L1,NQ (Toshiba U-MOSIV) — Exceeds minimum current rating at 60A continuous drain current with improved 8.0mOhm Rds On. Power dissipation of 88W is comparable to original. Gate threshold of 3.0V requires verification. Active product status with limited inventory.

Not Recommended:

IRFR1018ETRPBF and FDD10AN06A0 exhibit elevated on-resistance values (8.4mOhm and 10.5mOhm respectively) and higher gate threshold voltages (4.0V), introducing potential thermal and gate drive compatibility concerns. STD70N6F3 carries obsolete product status despite higher current rating.

Frequently Asked Questions (FAQ)

Q1: Can IPD079N06L3GATMA1 be used as a direct replacement for IPD079N06L3GBTMA1?

Yes. IPD079N06L3GATMA1 is the parametric equivalent with identical electrical specifications and active product status. No circuit modifications are required. The primary difference is packaging format (Tape & Reel versus Cut Tape), which does not affect electrical performance.

Q2: What is the significance of the on-resistance (Rds On) difference between substitute parts?

On-resistance directly determines power dissipation and thermal performance. Lower Rds On values (such as IRLR3636TRLPBF at 6.8mOhm) reduce I²R losses and heat generation, improving efficiency. Higher values (such as FDD10AN06A0 at 10.5mOhm) increase thermal load and may require enhanced heat sinking. Selection depends on thermal budget and efficiency requirements of the application.

Q3: Why do some substitutes have higher gate threshold voltages?

Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to turn the device on. Parts with higher thresholds (4.0V versus 2.2V) require stronger gate drive signals. Existing gate driver circuits must be verified to supply adequate voltage and current. Lower threshold devices (2.2V to 2.5V) are generally preferred for compatibility with standard gate drivers.

Q4: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed carry RoHS3 compliance certification and MSL Level 1 (unlimited moisture sensitivity) rating, matching the original device specifications.

Q5: What is the difference between Tc and Ta current ratings?

Tc (case temperature) ratings assume active thermal management and represent continuous current capability at elevated case temperature. Ta (ambient temperature) ratings represent continuous current at ambient conditions without active cooling. Tc ratings are typically higher and more relevant for surface mount applications with proper PCB thermal design.

Q6: Can parts with higher current ratings (such as STD70N6F3 at 70A) be used in place of the 50A original?

Higher current ratings provide additional design margin and thermal headroom. However, STD70N6F3 carries obsolete product status, making it unsuitable for new designs. Among active substitutes, TK60S06K3L at 60A offers improved current margin with active product status, though gate threshold compatibility must be verified.

Q7: What packaging considerations apply to these substitutes?

All substitute parts use TO-252-3 (DPAK) surface mount packaging, maintaining mechanical and thermal interface compatibility with the original device. Packaging variants (Cut Tape, Tape & Reel, Digi-Reel) affect procurement and assembly logistics but not electrical performance or PCB footprint.

Q8: How should gate charge (Qg) differences affect component selection?

Gate charge determines the energy required to switch the device and influences gate driver design. Higher Qg values (such as IRFR1018ETRPBF at 69nC) require more gate driver current or longer switching times. Lower values (such as STD70N6F3 at 35nC) reduce switching losses. Selection depends on gate driver capability and switching frequency requirements.

Q9: Is thermal performance affected by power dissipation rating differences?

Power dissipation rating indicates maximum allowable heat generation at specified case temperature. Parts with higher ratings (such as IRLR3636TRLPBF at 143W) provide greater thermal margin for the same application. However, actual power dissipation depends on on-resistance and application current profile, not the rating itself. Lower Rds On values reduce actual power dissipation regardless of rating.

Q10: Which substitute offers the best overall compatibility with the original design?

IPD079N06L3GATMA1 provides 100% parametric compatibility and is the recommended first choice. For alternative sources, IRLR3636TRLPBF offers superior on-resistance and thermal performance with active status, though gate charge elevation requires driver verification. SUD50N06-09L-E3 and SQD50N06-09L_GE3 provide acceptable performance with established supply chains.

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