IPD06P003NATMA1 Equivalent & Substitute Parts

Part Overview

The IPD06P003NATMA1 is a P-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 60V drain-to-source voltage with 22A continuous drain current and 83W power dissipation. The component is housed in a TO-252-3 (DPAK) surface mount package.

The IPD06P003NATMA1 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this P-Channel MOSFET topology.

Substiute Parts

IPD06P003NATMA1
Infineon TechnologiesIn Stock: 908IPD06P003NATMA1 Datasheet
IPD06P003NATMA1
Current Part
IPD650P06NMATMA1
Infineon TechnologiesIn Stock: 14301IPD650P06NMATMA1 Datasheet
IPD650P06NMATMA1
Parametric Equivalent
IPD650P06NMSAUMA1
Infineon TechnologiesIn Stock: 1120IPD650P06NMSAUMA1 Datasheet
IPD650P06NMSAUMA1
Parametric Equivalent
SQD19P06-60L_T4GE3
Vishay SiliconixIn Stock: 7819SQD19P06-60L_T4GE3 Datasheet
SQD19P06-60L_T4GE3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 22 A (Tc)
On-Resistance (Rds On Max) @ 22A, 10V 65 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1.04mA 4 V
Gate Charge (Qg Max) @ 10V 39 nC
Power Dissipation (Max) 83 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
Vgs (Max) ±20 V
Input Capacitance (Ciss Max) @ 30V 1600 pF

Substitute Part Grouping Explanation

Substitute parts for the IPD06P003NATMA1 are identified based on strict electrical and mechanical parameter matching within the P-Channel MOSFET category. The substitution logic is based on the following critical parameters:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 22A or higher
  • On-Resistance (Rds On): 65mOhm or lower at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 4V or lower
  • Operating Temperature Range: -55°C to 175°C or wider
  • Package Type: TO-252-3 (DPAK) surface mount

Substitute Categories:

Parametric Equivalents (Infineon OptiMOS™ Series): Parts IPD650P06NMATMA1 and IPD650P06NMSAUMA1 maintain identical electrical specifications to the main part while offering Active product status and improved supply availability.

Cross-Manufacturer Equivalent (Vishay TrenchFET®): Part SQD19P06-60L_T4GE3 provides functional equivalence with minor parameter variations. This part operates at 20A continuous drain current (versus 22A) and 46W power dissipation (versus 83W), representing a conservative design margin. The on-resistance is 55mOhm at 19A/10V, which is superior to the main part specification.

Parameter Comparison

Parameter IPD06P003NATMA1 IPD650P06NMATMA1 IPD650P06NMSAUMA1 SQD19P06-60L_T4GE3
Manufacturer Infineon Infineon Infineon Vishay Siliconix
Series OptiMOS™ OptiMOS™ OptiMOS™ TrenchFET®
Product Status Obsolete Active Active Active
Vdss 60V 60V 60V 60V
Id @ 25°C 22A 22A 22A 20A
Rds On (Max) 65mOhm @ 22A, 10V 65mOhm @ 22A, 10V 65mOhm @ 22A, 10V 55mOhm @ 19A, 10V
Vgs(th) Max 4V @ 1.04mA 4V @ 1.04mA 4V @ 1.04mA 2.5V @ 250µA
Gate Charge (Qg) 39nC @ 10V 39nC @ 10V 39nC @ 10V 41nC @ 10V
Power Dissipation (Max) 83W 83W 83W 46W
Operating Temperature -55 to 175°C -55 to 175°C -55 to 175°C -55 to 175°C
Package TO-252-3 TO-252-3 TO-252-3 TO-252-3
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Automotive Grade Not specified Not specified Not specified AEC-Q101
Inventory Status 832 Pcs 14286 Pcs 1058 Pcs 7742 Pcs

Engineering Selection Recommendations

For Direct Replacement (Obsolete Part Mitigation):

IPD650P06NMATMA1 and IPD650P06NMSAUMA1 are the primary substitutes for the IPD06P003NATMA1. Both parts are manufactured by Infineon and maintain identical electrical specifications. The key advantage is Active product status, ensuring long-term availability and supply chain continuity. IPD650P06NMATMA1 is supplied in Tape & Reel packaging with significantly higher inventory (14,286 pcs), making it the preferred choice for volume production. IPD650P06NMSAUMA1 offers an alternative with 1,058 pcs in stock.

For Cross-Manufacturer Applications:

SQD19P06-60L_T4GE3 (Vishay Siliconix) is a functional equivalent suitable for applications where cross-manufacturer sourcing is acceptable. This part meets the 60V voltage rating and provides superior on-resistance performance (55mOhm versus 65mOhm). The continuous drain current specification is 20A, which is lower than the main part's 22A rating. Applications operating below 20A continuous drain current can utilize this part without derating. The SQD19P06-60L_T4GE3 carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. RoHS3 compliance is confirmed for all substitute parts.

Compliance Considerations:

All substitute parts maintain REACH Unaffected status and ECCN EAR99 classification, matching the regulatory profile of the original part. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all parts, indicating no special moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can IPD650P06NMATMA1 be used as a direct replacement for IPD06P003NATMA1?

A: Yes. IPD650P06NMATMA1 is a parametric equivalent with identical electrical specifications: 60V Vdss, 22A continuous drain current, 65mOhm Rds On, and 83W power dissipation. The primary difference is product status (Active versus Obsolete) and packaging format (Tape & Reel). Pinout and package footprint (TO-252-3) are identical.

Q: What is the difference between IPD650P06NMATMA1 and IPD650P06NMSAUMA1?

A: Both parts are parametric equivalents with identical electrical specifications. The difference lies in packaging format and inventory availability. IPD650P06NMATMA1 is supplied in Tape & Reel with 14,286 pcs in stock, while IPD650P06NMSAUMA1 has 1,058 pcs available. For production applications, IPD650P06NMATMA1 is recommended due to higher availability.

Q: Can SQD19P06-60L_T4GE3 replace the IPD06P003NATMA1 in all applications?

A: SQD19P06-60L_T4GE3 is a functional equivalent for applications operating at or below 20A continuous drain current. The part provides superior on-resistance (55mOhm) and lower gate threshold voltage (2.5V), which may improve switching performance. However, the power dissipation rating is 46W versus 83W for the original part. Applications requiring the full 22A rating or 83W dissipation capability should use Infineon equivalents (IPD650P06NMATMA1 or IPD650P06NMSAUMA1).

Q: Are all substitute parts RoHS compliant?

A: Yes. IPD650P06NMATMA1, IPD650P06NMSAUMA1, and SQD19P06-60L_T4GE3 are all ROHS3 Compliant. The original IPD06P003NATMA1 does not specify RoHS status.

Q: What is the package compatibility between these parts?

A: All parts use the TO-252-3 (DPAK) surface mount package with identical pinout and footprint. PCB layout modifications are not required when substituting between these parts.

Q: Is SQD19P06-60L_T4GE3 suitable for automotive applications?

A: Yes. SQD19P06-60L_T4GE3 carries AEC-Q101 automotive qualification. The Infineon equivalents (IPD650P06NMATMA1 and IPD650P06NMSAUMA1) do not specify automotive qualification but are suitable for general industrial and consumer applications.

Q: What is the gate charge difference between these parts?

A: Gate charge is nearly identical across all parts: 39nC for Infineon parts and 41nC for the Vishay part, all measured at 10V. This minimal difference has negligible impact on gate drive circuit design.

Q: How do the on-resistance specifications compare?

A: IPD06P003NATMA1, IPD650P06NMATMA1, and IPD650P06NMSAUMA1 all specify 65mOhm Rds On at 22A/10V. SQD19P06-60L_T4GE3 specifies 55mOhm at 19A/10V, representing superior performance. Lower on-resistance reduces conduction losses and heat generation.

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