IPD06N03LB G Equivalent & Substitute Parts

Part Overview

The IPD06N03LB G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 50A continuous drain current in a TO-252-3 (DPAK) surface mount package. This device is part of the OptiMOS™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
Rds On (Max) @ Id, Vgs	6.1	mOhm @ 50A, 10V
Gate Threshold Voltage Vgs(th) (Max)	2	V @ 40µA
Gate Charge (Qg) (Max)	22	nC @ 5V
Input Capacitance (Ciss) (Max)	2800	pF @ 15V
Power Dissipation (Max)	83	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3, DPAK	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the IPD06N03LB G is determined by the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 50A or greater at 25°C
Package Type: TO-252-3 (DPAK) surface mount
Gate Threshold Voltage (Vgs(th)): Within ±0.3V of 2V
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Parameters:

Rds On (Max): 6.1mOhm or lower at rated conditions
Gate Charge (Qg): 22nC or lower
Input Capacitance (Ciss): 2800pF or lower

Substitute parts are grouped into two categories:

Category 1 - Direct Equivalents (Active Status): Parts meeting all primary criteria with active product status and modern compliance certifications (RoHS3, REACH Unaffected).

Category 2 - Functional Alternatives (Reduced Current Rating): Parts meeting voltage and package requirements but with lower continuous drain current ratings, suitable for applications with reduced current demands.

Parameter Comparison

Parameter	IPD06N03LB G	IPD060N03LGATMA1	DMG8880LK3-13	STD100N3LF3
Manufacturer	Infineon	Infineon	Diodes Inc.	STMicroelectronics
Vdss (V)	30	30	30	30
Id @ 25°C (A)	50 (Tc)	50 (Tc)	11 (Ta)	80 (Tc)
Rds On (Max) (mOhm)	6.1 @ 50A, 10V	6 @ 30A, 10V	7.5 @ 11.6A, 10V	5.5 @ 40A, 10V
Vgs(th) (Max) (V)	2 @ 40µA	2.2 @ 250µA	2.3 @ 250µA	2.5 @ 250µA
Qg (Max) (nC)	22 @ 5V	23 @ 10V	27.6 @ 10V	27 @ 5V
Ciss (Max) (pF)	2800 @ 15V	2400 @ 15V	1289 @ 15V	2060 @ 25V
Power Dissipation (Max) (W)	83 (Tc)	56 (Tc)	1.68 (Ta)	110 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 175
Package	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Product Status	Obsolete	Active	Active	Obsolete
RoHS Status	Not specified	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IPD060N03LGATMA1

The IPD060N03LGATMA1 is the preferred direct substitute for the IPD06N03LB G. Both devices are manufactured by Infineon Technologies within the OptiMOS™ series and share identical voltage and current ratings (30V, 50A). The IPD060N03LGATMA1 maintains active product status with RoHS3 compliance and REACH Unaffected certification, ensuring long-term availability and regulatory compliance. Electrical parameters are equivalent within engineering tolerances. The primary difference is packaging format (Tape & Reel vs. standard packaging), which does not affect electrical performance. Inventory availability is significantly higher (25,100 units vs. 854 units), supporting production continuity.

Secondary Recommendation: STD100N3LF3

The STD100N3LF3 from STMicroelectronics (STripFET™ II series) provides superior electrical performance with 80A continuous drain current and lower Rds On (5.5mOhm vs. 6.1mOhm). This device exceeds the current rating requirement and offers enhanced power handling capability (110W vs. 83W). However, it carries obsolete product status. RoHS3 compliance and REACH Unaffected certification are confirmed. This option is suitable for applications requiring higher current capacity or improved thermal performance within the same package footprint.

Alternative Option: DMG8880LK3-13

The DMG8880LK3-13 from Diodes Incorporated is a functional alternative for applications with reduced current demands (11A continuous drain current). This device maintains 30V voltage rating and TO-252-3 package compatibility with active product status and RoHS3 compliance. The significantly lower power dissipation (1.68W) and reduced gate charge (27.6nC) make this suitable for low-power switching applications. This option is not recommended as a direct replacement for full 50A applications but serves as a substitute for current-limited designs.

Compliance and Certification Status:

All recommended active substitutes (IPD060N03LGATMA1, DMG8880LK3-13) carry RoHS3 Compliant and REACH Unaffected certifications, meeting modern regulatory requirements. ECCN classification (EAR99) and HTSUS code (8541.29.0095) are consistent across all parts, indicating no export or tariff complications.

Frequently Asked Questions (FAQ)

Q1: Can the IPD060N03LGATMA1 be used as a direct replacement for the IPD06N03LB G without circuit modifications?

A: Yes. The IPD060N03LGATMA1 is a direct electrical equivalent with identical voltage rating (30V), current rating (50A), and package type (TO-252-3, DPAK). Pin configuration and functional characteristics are compatible. The only difference is packaging format (Tape & Reel), which does not affect electrical performance or PCB assembly compatibility.

Q2: What is the significance of the power dissipation difference between IPD06N03LB G (83W) and IPD060N03LGATMA1 (56W)?

A: Power dissipation ratings reflect thermal performance under specific test conditions. The IPD060N03LGATMA1 demonstrates improved thermal efficiency, which is advantageous for thermal management. Both devices operate within the same temperature range (-55°C to 175°C). The lower dissipation rating of the substitute does not indicate reduced capability; it reflects optimized design. Verify thermal requirements for your specific application.

Q3: Why is the STD100N3LF3 marked as obsolete if it offers superior current rating?

A: Product status reflects manufacturer production decisions and market positioning, not technical capability. The STD100N3LF3 remains functionally superior with 80A rating and lower Rds On. Obsolete status indicates limited future availability but does not affect current performance. Current inventory (15,465 units) supports near-term applications. For long-term production, the active IPD060N03LGATMA1 is recommended.

Q4: Is the DMG8880LK3-13 suitable for applications currently using the IPD06N03LB G?

A: The DMG8880LK3-13 is not a direct replacement due to significantly lower continuous drain current (11A vs. 50A). It is suitable only for applications with reduced current requirements. Verify actual circuit current demands before substitution. For full 50A applications, use IPD060N03LGATMA1 or STD100N3LF3.

Q5: What are the key electrical differences between the substitute parts?

A: The primary differences are continuous drain current (IPD060N03LGATMA1: 50A, STD100N3LF3: 80A, DMG8880LK3-13: 11A) and Rds On values. Gate threshold voltage varies slightly (2V to 2.5V range). Gate charge and input capacitance differ marginally. All devices maintain 30V voltage rating and TO-252-3 package compatibility. Select based on actual current requirements and thermal constraints.

Q6: Are there any temperature range limitations when substituting?

A: The IPD060N03LGATMA1 and STD100N3LF3 support the full -55°C to 175°C range matching the original part. The DMG8880LK3-13 operates to 150°C maximum, which is 25°C lower. For applications requiring operation above 150°C, use IPD060N03LGATMA1 or STD100N3LF3.

Q7: What compliance certifications should I verify for new designs?

A: All active substitute parts (IPD060N03LGATMA1, DMG8880LK3-13) carry RoHS3 Compliant and REACH Unaffected certifications. These certifications meet current regulatory requirements for EU and global markets. ECCN (EAR99) and HTSUS (8541.29.0095) classifications are consistent, indicating no export restrictions or tariff complications.

Q8: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines switching speed and driver requirements. The original part specifies 22nC @ 5V. Substitutes range from 23nC to 27.6nC. These differences are within typical design margins and do not require circuit modifications for standard gate driver circuits. High-frequency switching applications should verify driver capability for the specific Qg value.

Q9: What is the impact of input capacitance (Ciss) variation?

A: Input capacitance affects gate drive circuit performance and switching characteristics. The original part specifies 2800pF @ 15V. The IPD060N03LGATMA1 (2400pF) offers lower capacitance, improving switching speed. The STD100N3LF3 (2060pF) provides further reduction. The DMG8880LK3-13 (1289pF) has significantly lower capacitance. These variations are within acceptable ranges for standard applications but should be considered for high-frequency designs.

Q10: Can I mix different substitute parts in the same production batch?

A: Mixing substitute parts is not recommended for consistency and traceability. Select a single substitute part for a given design revision. If multiple substitutes are necessary due to supply constraints, document the substitution clearly in design records and verify electrical compatibility for each part individually. Maintain separate inventory tracking for each part number.

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