Equivalent & Substitute Parts for IPD06N03LA G

Part Overview

The IPD06N03LA G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage and 50A continuous drain current in a TO-252-3 surface mount package. This device is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing production support, design updates, and component sourcing continuity. The OptiMOS™ series positioning and specific electrical characteristics define the substitution parameters for this MOSFET category.

Substiute Parts

IPD06N03LA G
Infineon TechnologiesIn Stock: 2066IPD06N03LA G Datasheet
IPD06N03LA G
Current Part
IPD060N03LGATMA1
Infineon TechnologiesIn Stock: 25168IPD060N03LGATMA1 Datasheet
IPD060N03LGATMA1
Direct
STD100N3LF3
STMicroelectronicsIn Stock: 15489STD100N3LF3 Datasheet
STD100N3LF3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 25 V
Continuous Drain Current (Id) @ 25°C 50 A
Rds On (Max) @ 30A, 10V 5.7 mOhm
Gate Threshold Voltage (Vgs(th)) @ 40µA 2 V
Gate Charge (Qg) @ 5V 22 nC
Input Capacitance (Ciss) @ 15V 2653 pF
Power Dissipation (Max) 83 W
Operating Temperature Range -55 to 175 °C
Package Type TO-252-3 (DPAK)
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IPD06N03LA G is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must be equal to or greater than 25V
  • Continuous Drain Current (Id): Must be equal to or greater than 50A at 25°C
  • On-State Resistance (Rds On): Must not exceed the maximum specified value to maintain thermal performance
  • Gate Threshold Voltage (Vgs(th)): Must fall within compatible operating range
  • Package Type: Must be TO-252-3 (DPAK) surface mount configuration
  • Operating Temperature Range: Must support -55°C to 175°C

Substitute Parts Identified:

  1. IPD060N03LGATMA1 (Infineon Technologies) — Direct manufacturer equivalent with enhanced voltage rating (30V) and active product status
  2. STD100N3LF3 (STMicroelectronics) — Cross-manufacturer substitute with higher current rating (80A) and enhanced power dissipation capability

Both substitutes maintain the same package footprint and mounting technology, ensuring mechanical compatibility with existing PCB designs.

Parameter Comparison

Parameter IPD06N03LA G IPD060N03LGATMA1 STD100N3LF3 Unit
Manufacturer Infineon Infineon STMicroelectronics
Vdss (Drain-Source Voltage) 25 30 30 V
Id (Continuous Drain Current @ 25°C) 50 50 80 A
Rds On (Max) @ 10V 5.7 @ 30A 6 @ 30A 5.5 @ 40A mOhm
Vgs(th) (Max) 2 @ 40µA 2.2 @ 250µA 2.5 @ 250µA V
Gate Charge (Qg) (Max) 22 @ 5V 23 @ 10V 27 @ 5V nC
Ciss (Input Capacitance) @ 15V 2653 2400 2060 pF
Power Dissipation (Max) 83 56 110 W
Operating Temperature -55 to 175 -55 to 175 -55 to 175 °C
Package TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK)
Product Status Obsolete Active Obsolete
RoHS Compliance Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IPD060N03LGATMA1 Selection Criteria:

This Infineon substitute is the primary equivalent for the IPD06N03LA G. It maintains the same manufacturer ecosystem and OptiMOS™ series technology. The 30V Vdss rating provides 5V margin above the original 25V specification, enhancing design robustness. The part is currently in Active product status with ROHS3 compliance certification, ensuring long-term availability and regulatory alignment. Continuous drain current remains at 50A, matching the original specification exactly. The slightly higher Rds On (6mOhm vs. 5.7mOhm) and gate charge (23nC vs. 22nC) represent negligible performance variance within typical application tolerances. Packaging is identical (TO-252-3), enabling direct PCB substitution without layout modification.

STD100N3LF3 Selection Criteria:

This STMicroelectronics substitute provides enhanced performance characteristics suitable for applications requiring higher current capacity or thermal margin. The 80A continuous drain current rating exceeds the original 50A specification by 60%, offering design flexibility for upgraded or parallel-connected applications. The 30V Vdss rating matches the IPD060N03LGATMA1. On-state resistance of 5.5mOhm @ 40A is superior to the original specification. Power dissipation capability of 110W significantly exceeds the original 83W, supporting higher-power applications. The STripFET™ II series technology and ROHS3 compliance provide regulatory compliance. However, this part is classified as Obsolete, requiring verification of long-term availability before selection for new production designs. Package compatibility (TO-252-3) ensures mechanical interchangeability.

Compliance and Certification:

Both substitute parts maintain REACH Unaffected status and EAR99 ECCN classification, matching the original part's regulatory profile. The IPD060N03LGATMA1 carries ROHS3 Compliant certification, while the STD100N3LF3 also meets ROHS3 requirements. Moisture Sensitivity Level (MSL) remains at 1 (Unlimited) for all parts, indicating no special handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the IPD060N03LGATMA1 be used as a direct replacement for the IPD06N03LA G?

A: Yes. The IPD060N03LGATMA1 is a direct manufacturer equivalent with identical current rating (50A), same package type (TO-252-3), and compatible electrical characteristics. The 30V Vdss rating provides additional voltage margin. Active product status ensures ongoing availability.

Q: What is the primary difference between the two substitute parts?

A: The IPD060N03LGATMA1 maintains the original 50A current specification with enhanced voltage rating (30V) and active product status. The STD100N3LF3 offers higher current capacity (80A) and superior power dissipation (110W) but is classified as Obsolete. Selection depends on application current requirements and long-term sourcing strategy.

Q: Are there any thermal performance differences between these parts?

A: Yes. The IPD060N03LGATMA1 has a maximum power dissipation of 56W, lower than the original 83W. The STD100N3LF3 provides 110W maximum power dissipation, significantly exceeding the original specification. Application thermal requirements should guide selection.

Q: Will these substitutes work in existing PCB designs without modification?

A: Yes. All three parts use the identical TO-252-3 (DPAK) package with the same pin configuration and footprint. No PCB layout changes are required for mechanical compatibility.

Q: What is the significance of the "Active" vs. "Obsolete" product status?

A: Active status (IPD060N03LGATMA1) indicates ongoing manufacturing and long-term availability, suitable for new production designs. Obsolete status (IPD06N03LA G and STD100N3LF3) indicates discontinued production, requiring verification of remaining inventory and alternative sourcing strategies.

Q: How do the gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The original part specifies 22nC @ 5V, while substitutes range from 23nC to 27nC. These variations are within typical application tolerances and do not require gate driver circuit redesign for standard switching applications.

Q: Are there any compliance or certification differences?

A: The IPD060N03LGATMA1 and STD100N3LF3 both carry ROHS3 Compliant certification, while the original part does not specify RoHS status. All parts maintain REACH Unaffected status and EAR99 ECCN classification, ensuring regulatory alignment.

Q: What packaging format is available for the IPD060N03LGATMA1?

A: The IPD060N03LGATMA1 is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. The original IPD06N03LA G does not specify packaging format in the provided data.

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