IPD048N06L3GBTMA1 Equivalent & Substitute Parts

Part Overview

The IPD048N06L3GBTMA1 is an N-Channel 60V 90A MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 115W power dissipation and is housed in a TO-252-3 (DPAK) surface mount package. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting the same packaging and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	90	A
On-State Resistance (Rds On Max) @ 90A, 10V	4.8	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 58µA	2.2	V
Gate Charge (Qg Max) @ 4.5V	50	nC
Input Capacitance (Ciss Max) @ 30V	8400	pF
Power Dissipation (Max)	115	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD048N06L3GBTMA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 60V
Package Type: Must be TO-252-3 (DPAK, SC-63)
Mounting Type: Must be Surface Mount
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide (MOSFET)
Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Must be equal to or greater than 90A
On-State Resistance (Rds On): Lower or equal values are acceptable
Gate Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage specification
Power Dissipation: Must support thermal requirements of the application

Substitute parts identified below meet all primary criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	IPD048N06L3GBTMA1 (Main)	IPD031N06L3GATMA1 (Substitute)	IPD048N06L3GATMA1 (Substitute)
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Series	OptiMOS™	OptiMOS™	OptiMOS™
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vdss	60V	60V	60V
Id @ 25°C	90A	100A	90A
Rds On (Max) @ Id, 10V	4.8 mOhm @ 90A	3.1 mOhm @ 100A	4.8 mOhm @ 90A
Vgs(th) (Max) @ Id	2.2V @ 58µA	2.2V @ 93µA	2.2V @ 58µA
Qg (Max) @ 4.5V	50 nC	79 nC	50 nC
Ciss (Max) @ 30V	8400 pF	13000 pF	8400 pF
Power Dissipation (Max)	115W	167W	115W
Operating Temperature	-55 to 175°C	-55 to 175°C	-55 to 175°C
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IPD048N06L3GATMA1 (Manufacturer Recommended Substitute)

The IPD048N06L3GATMA1 is the direct active-production equivalent of the obsolete IPD048N06L3GBTMA1. This part maintains identical electrical specifications including 60V Vdss, 90A continuous drain current, 4.8 mOhm Rds On, and 115W power dissipation. The primary difference is packaging format: the substitute is supplied in Tape & Reel (TR) configuration with part number designation PG-TO252-3-311, whereas the original was supplied in Cut Tape (CT) & Digi-Reel® format. Both parts are housed in the same TO-252-3 (DPAK) package and are fully compatible at the circuit level. The IPD048N06L3GATMA1 holds Active product status and maintains all compliance certifications including ROHS3, REACH Unaffected, and MSL 1 rating. This part is the preferred selection for direct replacement applications.

IPD031N06L3GATMA1 (Higher Current Capability Substitute)

The IPD031N06L3GATMA1 is an alternative substitute offering enhanced electrical performance. This device maintains the same 60V Vdss rating and TO-252-3 package but provides 100A continuous drain current compared to the original 90A specification. The on-state resistance is reduced to 3.1 mOhm at 100A, 10V, providing lower conduction losses. Power dissipation capability increases to 167W. Gate charge increases to 79 nC and input capacitance to 13000 pF, which may affect switching characteristics in gate-drive-sensitive applications. This part is suitable for applications requiring higher current capacity or lower conduction losses within the same voltage and package constraints. The IPD031N06L3GATMA1 holds Active product status and maintains all compliance certifications.

Both substitute parts are manufactured by Infineon Technologies within the OptiMOS™ series and are ROHS3 compliant with unlimited moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can the IPD048N06L3GATMA1 be used as a direct replacement for the obsolete IPD048N06L3GBTMA1?

A: Yes. The IPD048N06L3GATMA1 is electrically and mechanically identical to the original part. The only difference is the packaging format (Tape & Reel versus Cut Tape & Digi-Reel). Both use the same TO-252-3 (DPAK) package and have identical electrical specifications. This is the manufacturer-recommended substitute.

Q: What is the difference between the IPD048N06L3GATMA1 and IPD031N06L3GATMA1?

A: Both parts share the same 60V Vdss rating and TO-252-3 package. The IPD031N06L3GATMA1 provides higher current capacity (100A versus 90A), lower on-state resistance (3.1 mOhm versus 4.8 mOhm), and higher power dissipation (167W versus 115W). The IPD031N06L3GATMA1 has higher gate charge (79 nC versus 50 nC) and input capacitance (13000 pF versus 8400 pF), which may affect gate-drive circuit design.

Q: Are all substitute parts in the same package?

A: Yes. All three parts—the original IPD048N06L3GBTMA1 and both substitutes (IPD048N06L3GATMA1 and IPD031N06L3GATMA1)—use the TO-252-3 (DPAK, SC-63) surface mount package. They are mechanically interchangeable on the PCB.

Q: What compliance certifications do the substitute parts maintain?

A: Both substitute parts maintain ROHS3 compliance, REACH Unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating, identical to the original part. ECCN and HTSUS classifications remain unchanged.

Q: Can I use the IPD031N06L3GATMA1 in place of the IPD048N06L3GBTMA1 in all applications?

A: The IPD031N06L3GATMA1 is electrically compatible for voltage and current specifications. However, the increased gate charge (79 nC versus 50 nC) and input capacitance (13000 pF versus 8400 pF) may require gate-drive circuit verification. Applications with tight gate-drive timing or current-limited gate drivers should be evaluated before substitution.

Q: What is the product status of the substitute parts?

A: Both IPD048N06L3GATMA1 and IPD031N06L3GATMA1 hold Active product status, ensuring long-term availability and continued manufacturing support from Infineon Technologies.

Q: Are there any thermal considerations when selecting between the substitutes?

A: The IPD031N06L3GATMA1 has higher power dissipation capability (167W versus 115W) and lower on-state resistance, resulting in reduced conduction losses. For applications operating near thermal limits, the IPD031N06L3GATMA1 may provide improved thermal margin. However, the original 115W rating of the IPD048N06L3GATMA1 is sufficient for applications designed for the original part.

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