Equivalent & Substitute Parts for IPD03N03LB G

Part Overview

The IPD03N03LB G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 90A continuous drain current. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part operates in the surface mount category with a TO-252-3 (DPAK) package configuration and is suitable for applications requiring high current switching at moderate voltage levels.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	90	A
On-Resistance (Rds On Max) @ 60A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs th Max) @ 70µA	2	V
Gate Charge (Qg Max) @ 5V	40	nC
Input Capacitance (Ciss Max) @ 15V	5200	pF
Power Dissipation (Max)	115	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPD03N03LB G is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide Semiconductor
Mounting Type: Must be Surface Mount
Package Category: Must be compatible with TO-252-3 or equivalent surface mount packages (DPAK, D2PAK)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must support minimum 80A at 25°C
On-Resistance (Rds On): Substitute must not exceed 3.3mOhm at rated conditions
Gate Threshold Voltage: Must fall within ±20V maximum gate voltage specification
Operating Temperature: Must support -55°C to 175°C range
Moisture Sensitivity Level: Must be MSL 1 (Unlimited)

The two identified substitutes meet these criteria with minor variations in current rating and on-resistance characteristics, both acceptable within the electrical envelope of the original part.

Parameter Comparison

Parameter	IPD03N03LB G (Infineon)	STB155N3LH6 (STMicroelectronics)	STD150N3LLH6 (STMicroelectronics)
Manufacturer	Infineon Technologies	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	30V	30V	30V
Continuous Drain Current (Id) @ 25°C	90A	80A	80A
Rds On (Max) @ 10V	3.3mOhm @ 60A	3mOhm @ 40A	2.8mOhm @ 40A
Gate Threshold Voltage (Vgs th Max)	2V @ 70µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg Max) @ 5V	40nC	80nC	29nC
Input Capacitance (Ciss Max)	5200pF @ 15V	3800pF @ 25V	3700pF @ 25V
Power Dissipation (Max)	115W	110W	110W
Operating Temperature	-55 to 175°C	-55 to 175°C	-55 to 175°C
Package Type	TO-252-3, DPAK	TO-263, D2PAK	TO-252-3, DPAK
Product Status	Obsolete	Active	Obsolete
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STB155N3LH6 (Primary Substitute - Active Status):

The STB155N3LH6 is the preferred substitute for new designs and procurement. This part maintains the 30V Vdss specification and supports 80A continuous drain current, representing a 10A reduction from the original 90A rating. The on-resistance of 3mOhm at 40A is superior to the IPD03N03LB G specification. The STB155N3LH6 carries Active product status, ensuring long-term availability and supply chain stability. The device is ROHS3 compliant and carries REACH Unaffected designation. Package configuration is TO-263 (D2PAK), which is mechanically and electrically compatible with TO-252-3 applications through standard PCB layout adaptation. Current inventory of 22,800 units supports immediate procurement requirements.

STD150N3LLH6 (Secondary Substitute - Obsolete Status):

The STD150N3LLH6 provides an alternative with identical package configuration (TO-252-3, DPAK) to the original part, eliminating layout redesign requirements. This device delivers superior on-resistance performance at 2.8mOhm and reduced gate charge at 29nC, improving switching efficiency. However, the part carries Obsolete product status, limiting long-term availability. The STD150N3LLH6 is ROHS3 compliant with REACH Unaffected status. Current inventory of 10,300 units is available. This substitute is suitable for legacy system maintenance and repair applications where package compatibility is critical.

Selection Logic:

For new product development: Select STB155N3LH6 (Active status, superior availability)
For legacy system support: Select STD150N3LLH6 (identical package, no layout modification)
Both substitutes meet the 30V Vdss and temperature range requirements
Both maintain compliance certifications (ROHS3, REACH Unaffected, EAR99, HTSUS 8541.29.0095)
Current rating reduction from 90A to 80A is acceptable for applications not requiring maximum original specification

Frequently Asked Questions (FAQ)

Q: Can the STB155N3LH6 be used as a direct replacement for the IPD03N03LB G?

A: The STB155N3LH6 is electrically compatible with the IPD03N03LB G for applications operating at or below 80A continuous drain current. The 30V Vdss rating, temperature range, and gate drive specifications are identical. The primary difference is package configuration: STB155N3LH6 uses TO-263 (D2PAK) versus the original TO-252-3 (DPAK). PCB layout modification is required to accommodate the different pin spacing and thermal tab orientation.

Q: What is the difference between TO-252-3 (DPAK) and TO-263 (D2PAK) packages?

A: Both are surface mount packages with three leads (two signal leads plus thermal tab). TO-252-3 (DPAK) features a smaller footprint with 2.54mm lead spacing. TO-263 (D2PAK) has a larger thermal tab and different pin configuration. Electrical performance is equivalent; mechanical PCB layout must be adapted to the specific package outline.

Q: Is the 10A reduction in continuous drain current (90A to 80A) significant for my application?

A: This depends on your circuit's maximum operating current. If your design operates at 80A or below, the STB155N3LH6 is fully compatible. If your application requires the full 90A capability, verify that thermal management and current distribution can be achieved with the substitute's 110W power dissipation rating versus the original 115W.

Q: Why does the STD150N3LLH6 have lower gate charge (29nC) than the STB155N3LH6 (80nC)?

A: Gate charge variation reflects differences in internal transistor geometry and manufacturing process between manufacturers. Lower gate charge reduces driver power consumption and switching losses. The STD150N3LLH6 offers superior switching performance characteristics, though it carries Obsolete product status.

Q: Are both substitutes RoHS and REACH compliant?

A: Both STB155N3LH6 and STD150N3LLH6 are ROHS3 compliant and REACH Unaffected. They meet the same environmental and regulatory standards as the original IPD03N03LB G. Both carry EAR99 ECCN classification and HTSUS code 8541.29.0095.

Q: Can I use the STD150N3LLH6 for new product designs?

A: The STD150N3LLH6 carries Obsolete product status, indicating discontinued manufacturing and limited long-term availability. For new product development, STB155N3LH6 is the recommended choice due to Active status and guaranteed supply continuity. STD150N3LLH6 is suitable for legacy system maintenance and repair applications only.

Q: What is the Moisture Sensitivity Level (MSL) for these substitutes?

A: All three parts (IPD03N03LB G, STB155N3LH6, and STD150N3LLH6) carry MSL 1 (Unlimited) designation, indicating no moisture sensitivity restrictions during storage, handling, or assembly processes.

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