IPD033N06NATMA1 Equivalent & Substitute Parts

Part Overview

The IPD033N06NATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 90A continuous drain current. This device operates in the OptiMOS™ series and is designed for surface mount applications in the TO-252-3 package. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to supply constraints, design flexibility, or application-specific requirements.

Substiute Parts

IPD033N06NATMA1

Infineon TechnologiesIn Stock: 2941IPD033N06NATMA1 Datasheet

Current PartRFQ

TK90S06N1L,LQ

Toshiba Semiconductor and StorageIn Stock: 2224TK90S06N1L,LQ Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPD033N06NATMA1 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 60V minimum
• Continuous Drain Current (Id): 90A minimum at 25°C
• On-State Resistance (Rds On): 3.3 mOhm maximum at rated conditions
• Package Type: TO-252-3 (DPAK) surface mount configuration
• Gate Drive Voltage: Compatible with 10V gate drive
• Operating Temperature: Minimum -55°C to 175°C range

The TK90S06N1L,LQ from Toshiba Semiconductor and Storage meets these criteria as a manufacturer-recommended substitute. Both devices share identical voltage and current ratings, equivalent on-state resistance specifications, and identical package geometry, enabling direct board-level substitution without circuit redesign.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (IPD033N06NATMA1): The Infineon IPD033N06NATMA1 is the specified component and remains the first choice for new designs. It carries active product status, full RoHS3 compliance, and REACH unaffected designation. The device is currently in stock with 2874 units available. The OptiMOS™ series designation indicates optimized performance characteristics for switching applications.

Substitute Selection (TK90S06N1L,LQ): The Toshiba TK90S06N1L,LQ is a manufacturer-recommended equivalent suitable for direct substitution. This device maintains identical voltage and current ratings, equivalent on-state resistance at rated conditions, and identical TO-252-3 package geometry. The substitute carries active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. Current inventory shows 2129 units available. The higher power dissipation rating (157W vs. 107W) and increased gate charge (81 nC vs. 44 nC) do not preclude substitution but indicate different thermal and switching characteristics that must be evaluated within the specific application circuit.

Both devices are suitable for applications requiring 60V/90A N-Channel MOSFET functionality in surface mount DPAK configuration. Selection between primary and substitute should be based on availability, supply chain requirements, and application-specific thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the TK90S06N1L,LQ directly replace the IPD033N06NATMA1 on the PCB?

A: Yes. Both devices use identical TO-252-3 (DPAK) package geometry with the same pin configuration and footprint. No PCB modifications are required for mechanical or electrical connectivity.

Q: Are there differences in gate drive requirements between these parts?

A: Both devices operate with ±20V maximum gate voltage and are compatible with 10V gate drive circuits. The Toshiba device has a lower gate threshold voltage (2.5V vs. 3.3V) and higher gate charge (81 nC vs. 44 nC), which may affect switching speed and driver current requirements in the specific application circuit.

Q: What is the significance of the different power dissipation ratings?

A: The Toshiba TK90S06N1L,LQ has a higher maximum power dissipation rating (157W vs. 107W), indicating greater thermal capability. This difference does not prevent substitution but reflects different thermal design margins. Thermal management in the application must accommodate the actual power dissipation of the selected device.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IPD033N06NATMA1 and TK90S06N1L,LQ are RoHS3 compliant, carry MSL Level 1 (unlimited moisture sensitivity), and are classified under ECCN EAR99 with identical HTSUS codes.

Q: What is the difference between the Infineon OptiMOS™ series and the Toshiba U-MOSVIII-H series?

A: These are manufacturer-specific product series designations. Both represent optimized MOSFET designs for their respective manufacturers. The electrical and mechanical parameters provided in this document determine substitution compatibility, not the series designation.

Q: Are there any temperature range limitations for substitution?

A: The Infineon device specifies -55°C to 175°C operating range. The Toshiba device specification provided indicates operation to 175°C. Both devices support the full industrial temperature range. Verify the complete Toshiba datasheet for the lower temperature limit if operation below 0°C is required.

Q: Can I use either part interchangeably in production?

A: Yes, provided the application circuit design accommodates the electrical parameter variations documented in the Parameter Comparison table. The higher gate charge and different threshold voltage of the Toshiba device may require driver circuit evaluation. Both parts carry active product status and full compliance certifications.