IPB80P04P4L08ATMA1 Equivalent & Substitute Parts

Part Overview

The IPB80P04P4L08ATMA1 is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 80A continuous drain current in a TO-263-3 surface mount package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing design support and production continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.

Substiute Parts

IPB80P04P4L08ATMA1

Infineon TechnologiesIn Stock: 891IPB80P04P4L08ATMA1 Datasheet

Current PartRFQ

IPB80P04P4L08ATMA2

Infineon TechnologiesIn Stock: 3104IPB80P04P4L08ATMA2 Datasheet

MFR RecommendedRFQ

SQM50P04-09L_GE3

Vishay SiliconixIn Stock: 2636SQM50P04-09L_GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IPB80P04P4L08ATMA1 are selected based on strict electrical and mechanical parameter matching. The primary substitution criteria are:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss): 40V minimum
• Continuous Drain Current (Id): 80A or greater at 25°C
• On-State Resistance (Rds On): Within acceptable range for thermal and efficiency performance
• Operating Temperature Range: -55°C to 175°C minimum
• Channel Type: P-Channel MOSFET

Mechanical Compatibility Requirements:

• Package Type: TO-263-3 / D2PAK (2 Leads + Tab)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2 or equivalent TO-263 footprint

Compliance Requirements:

• RoHS3 Compliant
• Automotive Grade (AEC-Q101 preferred)
• Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts must satisfy all electrical parameters while maintaining identical or compatible mechanical packaging to ensure direct board-level replacement without layout modifications.

Parameter Comparison

Engineering Selection Recommendations

IPB80P04P4L08ATMA2 (Infineon Technologies, Active)

This part is the manufacturer-recommended direct substitute for the obsolete IPB80P04P4L08ATMA1. Both devices share identical electrical specifications: 40V Vdss, 80A continuous drain current, 7.9-8.2 mOhm Rds On, and 75W power dissipation. The IPB80P04P4L08ATMA2 is from the OptiMOS®-P2 series and maintains full compatibility with the original design. Both parts are RoHS3 compliant with MSL 1 rating. The primary advantage is Active product status with 3031 units in stock, ensuring long-term availability. This substitute requires no circuit modifications and provides direct pin-for-pin replacement.

SQM50P04-09L_GE3 (Vishay Siliconix, Active)

This alternative substitute from Vishay Siliconix offers equivalent voltage and package specifications (40V Vdss, TO-263-3 D2PAK) with automotive-grade AEC-Q101 qualification. However, the continuous drain current is rated at 50A, which is 37.5% lower than the original 80A specification. The Rds On at rated current is 9.4 mOhm compared to 7.9 mOhm for the original part. Power dissipation capability is higher at 150W. This part is suitable only for applications where the 50A current rating is sufficient and thermal performance is not constrained. Gate charge is higher at 145 nC versus 92 nC, affecting switching speed characteristics. Selection of this part requires circuit-level thermal and current analysis to confirm adequacy.

Frequently Asked Questions (FAQ)

Q: Can IPB80P04P4L08ATMA2 be used as a direct replacement for IPB80P04P4L08ATMA1?

A: Yes. Both parts are P-Channel MOSFETs with identical electrical ratings (40V, 80A, 75W), matching Rds On specifications, and identical TO-263-3 D2PAK packaging. The IPB80P04P4L08ATMA2 is the manufacturer-recommended successor with Active product status. No circuit modifications are required.

Q: What are the key differences between IPB80P04P4L08ATMA2 and SQM50P04-09L_GE3?

A: The primary difference is continuous drain current: IPB80P04P4L08ATMA2 is rated for 80A while SQM50P04-09L_GE3 is rated for 50A. Rds On values differ slightly (8.2 mOhm vs. 9.4 mOhm at rated current). Gate charge is higher in the Vishay part (145 nC vs. 92 nC), affecting switching characteristics. Both share 40V Vdss, TO-263-3 packaging, and automotive qualification.

Q: Is the SQM50P04-09L_GE3 suitable for all applications using the original IPB80P04P4L08ATMA1?

A: No. The SQM50P04-09L_GE3 is rated for 50A continuous drain current, which is insufficient for applications requiring the full 80A capability of the original part. This substitute is only appropriate for circuits where maximum drain current does not exceed 50A. Thermal analysis is required to confirm adequate power dissipation margin.

Q: Are all substitute parts RoHS3 compliant and automotive qualified?

A: IPB80P04P4L08ATMA2 and SQM50P04-09L_GE3 are both RoHS3 compliant with MSL 1 rating. Both carry automotive-grade qualification: IPB80P04P4L08ATMA2 does not specify AEC-Q101 in the provided data, while SQM50P04-09L_GE3 is AEC-Q101 qualified. Verify automotive qualification requirements with your design specifications.

Q: Can these parts be used interchangeably on the same PCB without layout changes?

A: Yes, all three parts use identical TO-263-3 D2PAK surface mount packaging with the same pin configuration and footprint. Board-level layout modifications are not required for substitution. However, thermal management considerations may differ due to varying power dissipation ratings and Rds On characteristics.

Q: What is the impact of higher gate charge in the SQM50P04-09L_GE3?

A: The SQM50P04-09L_GE3 has gate charge of 145 nC compared to 92 nC in the original part. Higher gate charge increases switching time and driver power requirements. If the circuit uses a fixed gate driver, switching frequency or efficiency may be affected. Verify gate driver capability before selecting this substitute.