IPB80N06S2L06ATMA2 Equivalent & Substitute Parts

Part Overview

The IPB80N06S2L06ATMA2 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 55V drain-to-source voltage with 80A continuous drain current at 25°C, housed in a TO-263-3 (D2PAK) surface mount package. The part is currently in Active product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary device becomes unavailable due to supply constraints, obsolescence of related product lines, or when design flexibility permits selection from equivalent alternatives that meet the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On Max) @ 69A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 180µA	2	V
Gate Charge (Qg Max) @ 10V	150	nC
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPB80N06S2L06ATMA2 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥55V
Continuous Drain Current (Id): Must be ≥80A at 25°C
Package Type: Must be TO-263-3 or D2PAK (2 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature Range: Must support -55°C to 175°C (TJ)
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation: Must support thermal requirements of the application

The three substitute parts listed below meet the primary substitution criteria with variations in secondary parameters that reflect different design trade-offs within the N-Channel MOSFET category.

Parameter Comparison

Parameter	IPB80N06S2L06ATMA2 (Main)	BUK9606-55A,118	STB100N6F7	STB140NF75T4
Manufacturer	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
Vdss (V)	55	55	60	75
Id @ 25°C (A)	80 (Tc)	75 (Tj)	100 (Tc)	120 (Tc)
Rds On Max (mOhm)	6 @ 69A, 10V	5.8 @ 25A, 10V	5.6 @ 50A, 10V	7.5 @ 70A, 10V
Vgs(th) Max (V)	2 @ 180µA	2 @ 1mA	4 @ 250µA	4 @ 250µA
Qg Max @ 10V (nC)	150	Not specified	30	218
Ciss Max @ 25V (pF)	3800	8600	1980	5000
Power Dissipation Max (W)	250 (Tc)	300 (Tc)	125 (Tc)	310 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3, D2PAK	D2PAK	TO-263, D2PAK	D2PAK
Product Status	Active	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BUK9606-55A,118 (Nexperia USA Inc.)

This part matches the voltage rating (55V) and provides equivalent drain current (75A) within acceptable tolerance for the IPB80N06S2L06ATMA2 application envelope. However, the product status is listed as Obsolete, which presents long-term supply risk. The part carries AEC-Q101 automotive qualification and is RoHS3 compliant. Selection of this substitute should be limited to applications where supply continuity is not critical or where existing inventory is available. The lower on-state resistance (5.8mOhm) provides thermal advantage, but the higher input capacitance (8600pF) may require drive circuit adjustment.

STB100N6F7 (STMicroelectronics)

This part exceeds the primary specifications with 60V rating and 100A continuous drain current, providing design margin above the IPB80N06S2L06ATMA2 baseline. Product status is Active with full RoHS3 compliance. The significantly lower gate charge (30nC) and input capacitance (1980pF) indicate faster switching characteristics, which may reduce switching losses in high-frequency applications. However, the lower power dissipation rating (125W) compared to the main part (250W) requires thermal analysis for high-power applications. This substitute is suitable for applications prioritizing switching speed and efficiency.

STB140NF75T4 (STMicroelectronics)

This part provides the highest current rating (120A) and voltage margin (75V), offering the greatest design headroom. Product status is Active with AEC-Q101 automotive qualification and RoHS3 compliance. The higher gate charge (218nC) and input capacitance (5000pF) indicate slower switching compared to STB100N6F7 but remain within acceptable ranges for most applications. The highest power dissipation rating (310W) supports demanding thermal environments. This substitute is recommended for applications requiring maximum current capacity and thermal robustness.

Frequently Asked Questions (FAQ)

Q: Can the BUK9606-55A,118 be used as a direct replacement for the IPB80N06S2L06ATMA2?

A: The BUK9606-55A,118 meets the voltage and current specifications and uses the same D2PAK package. However, its Obsolete product status creates supply risk. Electrical parameters are compatible, but the higher input capacitance (8600pF vs. 3800pF) may require gate drive circuit verification. Use only if supply continuity is confirmed or existing inventory is available.

Q: Which substitute part has the best thermal performance?

A: The STB140NF75T4 offers the highest power dissipation rating (310W) and lowest on-state resistance relative to its current rating. For applications requiring maximum thermal headroom, this part is the preferred choice. The STB100N6F7 has lower power dissipation (125W), making it suitable only for lower-power applications.

Q: Are all substitute parts pin-compatible with the IPB80N06S2L06ATMA2?

A: All substitute parts use the TO-263-3 or D2PAK package format with identical pin configuration (2 Leads + Tab). Physical and electrical pin compatibility is confirmed. PCB layout modifications are not required for package substitution.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The STB100N6F7 (30nC) requires significantly less gate drive energy than the main part (150nC), enabling use of lower-power gate drivers. The STB140NF75T4 (218nC) requires higher gate drive capability. Gate driver selection must be verified against the substitute part's Qg specification.

Q: Can these parts be used interchangeably in existing designs without modification?

A: Electrical interchangeability is confirmed for voltage, current, and package specifications. However, differences in gate charge, input capacitance, and on-state resistance may affect circuit performance. Gate driver circuits, thermal management, and switching frequency performance should be verified for each substitute part before production implementation.

Q: Which substitute part is recommended for new designs?

A: For new designs, the STB100N6F7 or STB140NF75T4 are recommended due to Active product status and established supply chains. Selection between these two depends on application requirements: STB100N6F7 for switching speed priority, STB140NF75T4 for current capacity and thermal margin priority.

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