IPB70P04P409ATMA2 Equivalent & Substitute Parts

Part Overview

The IPB70P04P409ATMA2 is a P-Channel MOSFET from Infineon Technologies' OptiMOS™ series, rated for 40 V drain-to-source voltage with 72 A continuous drain current and 75 W power dissipation. The device is housed in a PG-TO263-3-2 surface mount package. This part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and maintenance applications.

Substiute Parts

IPB70P04P409ATMA2

Infineon TechnologiesIn Stock: 910IPB70P04P409ATMA2 Datasheet

Current PartRFQ

IPB80P04P405ATMA2

Infineon TechnologiesIn Stock: 2896IPB80P04P405ATMA2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPB70P04P409ATMA2 is determined by strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:

Electrical Compatibility Requirements:

• FET Type: P-Channel (identical topology required)
• Drain to Source Voltage (Vdss): 40 V (minimum rating must equal or exceed)
• Continuous Drain Current (Id): Substitute must support ≥72 A at 25°C
• Operating Temperature Range: -55°C to 175°C (must match or exceed)
• Gate Voltage (Vgs): ±20 V maximum (must match or exceed)

Mechanical Compatibility Requirements:

• Package / Case: TO-263-3, D2PAK (2 Leads + Tab) (identical package required)
• Mounting Type: Surface Mount (identical mounting required)
• Supplier Device Package: PG-TO263-3-2 (identical supplier package required)

Regulatory Compliance:

• RoHS3 Compliance (maintained)
• REACH Status: REACH Unaffected (maintained)

The IPB80P04P405ATMA2 satisfies all substitution criteria as an active product with enhanced electrical performance characteristics while maintaining identical mechanical and regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

The IPB80P04P405ATMA2 is the direct substitute for the obsolete IPB70P04P409ATMA2. Selection of this substitute is based on the following engineering criteria:

Product Status Alignment: The IPB80P04P405ATMA2 carries an Active product status, ensuring continued availability, manufacturing support, and supply chain reliability. The original IPB70P04P409ATMA2 is classified as Obsolete, making substitution necessary for new designs and ongoing production.

Electrical Performance Enhancement: The substitute provides improved electrical characteristics within the same voltage class (40 V Vdss). The continuous drain current increases from 72 A to 80 A, and power dissipation capability increases from 75 W to 125 W. The on-resistance (Rds On) decreases from 9.1 mOhm to 5.2 mOhm, resulting in lower conduction losses and improved thermal performance.

Mechanical and Package Compatibility: Both devices utilize identical TO-263-3 D2PAK surface mount packaging with PG-TO263-3-2 supplier device package designation. Pin configuration and PCB footprint compatibility are maintained, enabling direct board-level substitution without layout modifications.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH Unaffected status, satisfying environmental and regulatory requirements. The substitute carries AEC-Q101 automotive qualification and Moisture Sensitivity Level (MSL) 1 rating, indicating enhanced reliability for demanding applications.

Frequently Asked Questions (FAQ)

Q: Can the IPB80P04P405ATMA2 be used as a direct replacement for the IPB70P04P409ATMA2 on existing PCBs?

A: Yes. Both devices share identical TO-263-3 D2PAK packaging, PG-TO263-3-2 supplier device package designation, and surface mount configuration. No PCB layout modifications are required for substitution.

Q: What are the key electrical differences between these two P-Channel MOSFETs?

A: The IPB80P04P405ATMA2 provides higher continuous drain current (80 A versus 72 A), greater power dissipation capability (125 W versus 75 W), and lower on-resistance (5.2 mOhm versus 9.1 mOhm). Both maintain identical 40 V drain-to-source voltage rating and ±20 V gate voltage maximum.

Q: Why is the IPB70P04P409ATMA2 classified as obsolete?

A: The IPB70P04P409ATMA2 has reached end-of-life status within Infineon's product portfolio. The IPB80P04P405ATMA2 from the OptiMOS®-P2 series represents the active successor technology with enhanced performance characteristics.

Q: Are there any thermal or reliability differences between these devices?

A: The IPB80P04P405ATMA2 demonstrates improved thermal performance through lower on-resistance and higher power dissipation rating. The substitute carries AEC-Q101 automotive qualification and MSL 1 moisture sensitivity rating, indicating enhanced reliability for critical applications.

Q: What is the operating temperature range for both devices?

A: Both the IPB70P04P409ATMA2 and IPB80P04P405ATMA2 operate across the identical temperature range of -55°C to 175°C (TJ), ensuring thermal compatibility in all application environments.

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both devices are ROHS3 compliant and REACH Unaffected, satisfying environmental and regulatory requirements for commercial and industrial applications.

Q: What is the gate charge difference between these MOSFETs?

A: The IPB70P04P409ATMA2 has a maximum gate charge of 70 nC at 10 V, while the IPB80P04P405ATMA2 has a maximum gate charge of 151 nC at 10 V. This difference reflects the enhanced current-handling capability of the substitute device.

Q: Can the IPB80P04P405ATMA2 be used in applications originally designed for the IPB70P04P409ATMA2?

A: Yes. The substitute meets or exceeds all electrical and mechanical requirements of the original part. The enhanced performance characteristics (higher current rating, lower on-resistance, greater power dissipation) make it suitable for all applications previously served by the IPB70P04P409ATMA2.