IPB65R660CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPB65R660CFDATMA1 is an N-Channel 650V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is designed for surface mount applications in the TO-263-3 (D2PAK) package and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, necessitating identification of equivalent substitute components that maintain functional compatibility while offering active product status and continued availability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 2.1A, 10V	660	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	22	nC
Power Dissipation (Max)	62.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPB65R660CFDATMA1 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 650V to ensure safe operation in the original application circuit.

Current Handling Capability: The continuous drain current (Id) rating must be sufficient to support the 6A requirement at 25°C operating conditions.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed the original specification to prevent excessive power dissipation and thermal stress.

Gate Charge (Qg): Gate charge characteristics affect switching speed and driver circuit compatibility. Values within the specified range ensure proper gate drive performance.

Package and Mounting: All substitute parts must use the TO-263-3 (D2PAK) surface mount package to maintain PCB layout and assembly compatibility.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C temperature range.

Product Status and Compliance: Active product status with RoHS3 compliance and REACH unaffected status ensures long-term availability and regulatory compliance.

Parameter Comparison

Parameter	IPB65R660CFDATMA1 (Main)	IXTA10N60P	STB10N95K5
Manufacturer	Infineon Technologies	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	650V	600V	950V
Continuous Drain Current (Id) @ 25°C	6A	10A	8A
Rds On (Max) @ 10V	660 mOhm @ 2.1A	740 mOhm @ 5A	800 mOhm @ 4A
Gate Charge (Qg) @ 10V	22 nC	32 nC	22 nC
Power Dissipation (Max)	62.5W	200W	130W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package Type	TO-263-3 (D2PAK)	TO-263AA	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTA10N60P Selection Criteria:

The IXTA10N60P operates at 600V, which is 50V below the original 650V specification. This part is suitable only for applications where the circuit voltage stress does not approach the 650V threshold. The higher continuous drain current rating (10A versus 6A) and significantly higher power dissipation capability (200W versus 62.5W) provide design margin for thermal management. The part is active with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Gate charge is 32 nC, slightly elevated compared to the original 22 nC specification.

STB10N95K5 Selection Criteria:

The STB10N95K5 operates at 950V, providing 300V additional voltage margin above the original 650V specification. This part is suitable for applications requiring enhanced voltage headroom or operating in higher voltage environments. The continuous drain current rating (8A) exceeds the original 6A requirement. On-state resistance (800 mOhm) is comparable to the original specification. Gate charge matches the original at 22 nC, ensuring compatible gate drive characteristics. The part is active with ROHS3 compliance and unlimited MSL rating. Power dissipation capability (130W) is approximately double the original specification.

Compliance and Availability:

Both substitute parts carry active product status, ensuring continued manufacturing and supply chain availability. Both are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. Both maintain the TO-263 package family for PCB compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXTA10N60P be used as a direct replacement for the IPB65R660CFDATMA1?

A: The IXTA10N60P operates at 600V, which is 50V lower than the original 650V rating. Direct substitution is permissible only if the application circuit operates below 600V. The higher current and power dissipation ratings provide additional design margin. Verify that circuit voltage stress does not exceed 600V before implementation.

Q: What is the primary advantage of the STB10N95K5 as a substitute?

A: The STB10N95K5 provides a 950V voltage rating, offering 300V additional margin above the original 650V specification. This is advantageous for applications requiring enhanced voltage headroom or operating in higher voltage environments. The gate charge characteristic (22 nC) matches the original specification exactly, ensuring compatible switching performance.

Q: Are both substitute parts compatible with the original PCB layout?

A: Both substitute parts use the TO-263 package family (D2PAK). The IXTA10N60P uses TO-263AA and the STB10N95K5 uses TO-263 (D2PAK). These packages are mechanically compatible with the original TO-263-3 (D2PAK) footprint for surface mount assembly.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original part specifies 22 nC at 10V. The IXTA10N60P specifies 32 nC, requiring approximately 45% more gate charge. The STB10N95K5 matches the original at 22 nC. Higher gate charge may require gate driver circuit adjustment to maintain switching speed.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: On-state resistance directly affects power dissipation and thermal performance. The original IPB65R660CFDATMA1 specifies 660 mOhm at 2.1A and 10V. The IXTA10N60P specifies 740 mOhm at 5A and 10V, and the STB10N95K5 specifies 800 mOhm at 4A and 10V. Higher Rds On values result in increased power dissipation. Verify thermal design margins when substituting parts with higher on-state resistance.

Q: Why is product status important for component selection?

A: The original IPB65R660CFDATMA1 is classified as obsolete, meaning manufacturing has been discontinued and supply is limited to existing inventory. Both substitute parts carry active product status, ensuring continued availability from manufacturers and distributors. Active status supports long-term production and supply chain reliability.

Q: Are there compliance differences between the main part and substitutes?

A: The original part does not specify RoHS status. Both substitute parts are ROHS3 compliant, meeting current environmental and regulatory requirements. All three parts are REACH unaffected and carry EAR99 ECCN classification. Both substitutes maintain unlimited moisture sensitivity level (MSL 1).

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