IPB65R280C6ATMA1 Equivalent & Substitute Parts

Part Overview

The IPB65R280C6ATMA1 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 13.8A continuous drain current at 25°C with a maximum on-resistance of 280mOhm at 10V gate drive. The component is housed in a D2PAK (TO-263-3) surface mount package.

The IPB65R280C6ATMA1 has reached obsolete product status. Locating equivalent or substitute parts is necessary to support ongoing production requirements, design updates, or inventory replenishment where original stock is unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	13.8	A
On-Resistance (Rds On Max) @ 10V	280	mOhm
Gate Threshold Voltage (Vgs th Max)	3.5	V @ 440µA
Gate Charge (Qg Max) @ 10V	45	nC
Input Capacitance (Ciss Max) @ 100V	950	pF
Power Dissipation (Max)	104	W
Operating Temperature Range	-55 to 150	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution of the IPB65R280C6ATMA1 is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-source voltage must equal or exceed 650V to maintain system safety margins and prevent breakdown under peak operating conditions.

On-Resistance (Rds On): The maximum on-resistance at 10V gate drive must not exceed 280mOhm to ensure equivalent power dissipation and thermal performance in the application circuit.

Continuous Drain Current (Id): The substitute must support at least 13.8A continuous current at 25°C to handle the design load without derating.

Package Compatibility: All substitutes must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Drive Voltage: All candidates operate at 10V gate drive, ensuring compatibility with existing driver circuits.

Operating Temperature: The -55°C to 150°C range must be maintained or exceeded.

Based on these criteria, the substitute parts are grouped as follows:

Group 1 (Voltage-Reduced, Active Status): IPB60R280P7ATMA1 and R6015KNJTL operate at 600V, which is 50V below the original specification. These parts are suitable only where system design permits reduced voltage margin.

Group 2 (Voltage-Matched, Active Status): STB18N65M5 maintains the 650V rating and exceeds current capacity at 15A, with improved on-resistance of 220mOhm.

Group 3 (Voltage-Reduced, Higher Current): STB20NM60T4 operates at 600V with 20A current capacity, representing a different performance profile.

Parameter Comparison

Parameter	IPB65R280C6ATMA1 (Main)	IPB60R280P7ATMA1	R6015KNJTL	STB18N65M5	STB20NM60T4
Manufacturer	Infineon	Infineon	Rohm	STMicroelectronics	STMicroelectronics
Vdss (V)	650	600	600	650	600
Id @ 25°C (A)	13.8	12	15	15	20
Rds On Max @ 10V (mOhm)	280	280	290	220	290
Vgs th Max (V)	3.5 @ 440µA	4 @ 190µA	5 @ 1mA	5 @ 250µA	5 @ 250µA
Qg Max @ 10V (nC)	45	18	37.5	31	54
Ciss Max (pF)	950 @ 100V	761 @ 400V	1050 @ 25V	1240 @ 100V	1500 @ 25V
Power Dissipation Max (W)	104	53	184	110	192
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IPB60R280P7ATMA1 (Infineon CoolMOS™ P7): This part is an active product with ROHS3 compliance. It maintains identical on-resistance (280mOhm) and package format. The 600V rating represents a 50V reduction from the original 650V specification. Selection of this part requires confirmation that the application circuit design permits operation at 600V without violating system safety margins or component stress limits. Gate charge is significantly reduced (18nC vs. 45nC), which may improve switching performance. Inventory availability is high (2198 pcs).

R6015KNJTL (Rohm Semiconductor): This part is an active product with ROHS3 compliance. It provides 15A current capacity, exceeding the original 13.8A requirement. On-resistance is marginally higher at 290mOhm. The 600V rating applies the same voltage reduction consideration as IPB60R280P7ATMA1. Power dissipation capability is significantly higher (184W vs. 104W), providing thermal margin. Inventory availability is highest among substitutes (4005 pcs).

STB18N65M5 (STMicroelectronics MDmesh™ V): This part maintains the 650V voltage rating, matching the original specification exactly. It is an active product with ROHS3 compliance. Continuous drain current is 15A, exceeding the original 13.8A. On-resistance is improved at 220mOhm, reducing power dissipation. Gate charge is lower (31nC vs. 45nC). Maximum gate voltage is ±25V, providing additional margin over the original ±20V. This part offers the closest electrical equivalence to the original device. Inventory availability is moderate (1408 pcs).

STB20NM60T4 (STMicroelectronics MDmesh™): This part is an active product with ROHS3 compliance. It provides the highest current capacity at 20A and highest power dissipation capability at 192W. The 600V rating applies the same voltage reduction consideration. On-resistance is 290mOhm. Gate charge is highest among substitutes (54nC), which may increase switching losses. Maximum gate voltage is ±30V. This part is suitable for applications requiring higher current headroom. Inventory availability is high (3200 pcs).

Frequently Asked Questions (FAQ)

Q: Can the IPB65R280C6ATMA1 be directly replaced with a 600V rated substitute?

A: Direct replacement with 600V rated parts (IPB60R280P7ATMA1, R6015KNJTL, STB20NM60T4) requires circuit design verification. The 50V voltage reduction may affect system safety margins, particularly in high-voltage transient conditions or applications with limited overvoltage protection. The original 650V rating provides 50V margin above typical 600V bus voltages. Substitution is permissible only where design analysis confirms adequate protection against voltage spikes and transients.

Q: Which substitute offers the best electrical match to the original IPB65R280C6ATMA1?

A: The STB18N65M5 provides the closest electrical equivalence. It maintains the 650V voltage rating, exceeds current capacity (15A vs. 13.8A), and improves on-resistance (220mOhm vs. 280mOhm). Gate charge is lower (31nC vs. 45nC), potentially improving switching performance. This part is recommended where direct functional replacement is required without circuit modification.

Q: Are all substitute parts compatible with the existing D2PAK footprint?

A: Yes. All substitute parts listed use the D2PAK (TO-263-3) surface mount package. Mechanical and electrical pin compatibility is maintained across all candidates. No PCB layout modification is required for package substitution.

Q: What is the impact of different gate charge (Qg) values on circuit performance?

A: Gate charge affects switching speed and driver power dissipation. The original part requires 45nC at 10V. Substitutes range from 18nC (IPB60R280P7ATMA1) to 54nC (STB20NM60T4). Lower gate charge reduces driver current demand and switching losses. Higher gate charge increases driver stress. If the existing gate driver is current-limited, parts with lower gate charge (IPB60R280P7ATMA1, STB18N65M5) may improve performance. Parts with higher gate charge (STB20NM60T4) may require driver verification.

Q: Does on-resistance variation affect thermal design?

A: Yes. On-resistance directly determines conduction losses. The original part specifies 280mOhm maximum. STB18N65M5 offers improved performance at 220mOhm, reducing power dissipation and thermal load. IPB60R280P7ATMA1 matches at 280mOhm. R6015KNJTL and STB20NM60T4 are marginally higher at 290mOhm. For thermally constrained applications, STB18N65M5 is preferred. For applications with adequate thermal margin, the 10mOhm difference is negligible.

Q: What compliance certifications apply to all substitute parts?

A: All active substitute parts carry ROHS3 compliance certification. All parts are REACH Unaffected and classified as EAR99 for export control purposes. HTSUS classification is identical across all parts (8541.29.0095). Moisture sensitivity level is 1 (Unlimited) for all candidates, matching the original part.

Q: Can the IPB60R280P7ATMA1 be used in applications originally designed for 650V operation?

A: The IPB60R280P7ATMA1 operates at 600V maximum. Use in 650V-rated applications requires design review to confirm that system voltage transients, overvoltage conditions, and protection circuit thresholds do not exceed 600V. This part is suitable for applications with confirmed 600V maximum operating voltage or where overvoltage protection limits peak voltage to 600V or below.

Q: Which substitute part has the highest inventory availability?

A: R6015KNJTL (Rohm Semiconductor) has the highest inventory availability at 4005 pcs. STB20NM60T4 (STMicroelectronics) is second at 3200 pcs. IPB60R280P7ATMA1 (Infineon) is third at 2198 pcs. STB18N65M5 (STMicroelectronics) has the lowest availability at 1408 pcs among active substitutes.

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