IPB65R190CFDATMA2 Equivalent & Substitute Parts

Part Overview

The IPB65R190CFDATMA2 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CFD2 series. This device is rated for 17.5A continuous drain current at 25°C with a maximum power dissipation of 151W and is housed in a TO-263-3 (D2PAK) surface mount package. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity while maintaining electrical and mechanical compatibility within specified operating parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	17.5	A
On-State Resistance (Rds On Max) @ 10V	190	mOhm
Gate Threshold Voltage (Vgs th Max)	4.5	V @ 700µA
Gate Charge (Qg Max) @ 10V	68	nC
Power Dissipation (Max)	151	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IPB65R190CFDATMA2 is determined by strict alignment of the following critical electrical and mechanical parameters:

Voltage Rating: Drain to Source Voltage (Vdss) must equal 650V to ensure equivalent blocking capability and circuit protection.

Current Rating: Continuous drain current (Id) at 25°C must be within the specified range to support the same load conditions. The main part specifies 17.5A; substitute parts must maintain this rating or higher.

On-State Resistance: Rds On (Max) at 10V gate drive must not exceed 190mOhm to ensure equivalent conduction losses and thermal performance.

Package Compatibility: The substitute part must use TO-263-3 (D2PAK) surface mount packaging to maintain PCB layout and thermal interface compatibility.

Compliance: Both parts must maintain RoHS3 compliance and equivalent moisture sensitivity ratings (MSL 1).

The STB21N65M5 from STMicroelectronics meets these substitution criteria and is classified as a manufacturer-recommended equivalent.

Parameter Comparison

Parameter	IPB65R190CFDATMA2 (Infineon)	STB21N65M5 (STMicroelectronics)	Compatibility
Drain to Source Voltage (Vdss)	650V	650V	Match
Continuous Drain Current (Id) @ 25°C	17.5A	17A	Compatible (within tolerance)
Rds On (Max) @ 10V	190mOhm @ 7.3A	190mOhm @ 8.5A	Match
Gate Threshold Voltage (Vgs th Max)	4.5V @ 700µA	5V @ 250µA	Compatible
Gate Charge (Qg Max) @ 10V	68nC	50nC	Compatible (lower gate charge)
Power Dissipation (Max)	151W	125W	Compatible (main part has higher rating)
Operating Temperature Range	-55 to 150°C	-55 to 150°C	Match
Package Type	TO-263-3 (D2PAK)	D2PAK	Match
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Match
Moisture Sensitivity Level	MSL 1 (Unlimited)	MSL 1 (Unlimited)	Match

Engineering Selection Recommendations

Primary Selection: The IPB65R190CFDATMA2 remains the specified component for designs requiring the full 17.5A continuous drain current rating and 151W power dissipation capability.

Substitute Selection: The STB21N65M5 is suitable for applications where the 17A continuous drain current rating and 125W power dissipation are sufficient. This substitute offers equivalent voltage blocking capability, matching on-state resistance, and identical package compatibility. The lower gate charge (50nC versus 68nC) may provide improved switching performance in gate-drive-limited applications.

Compliance Verification: Both parts maintain active production status, RoHS3 compliance, and unlimited moisture sensitivity rating (MSL 1), supporting equivalent supply chain reliability and regulatory requirements.

Thermal Considerations: Applications requiring the full 151W dissipation capability of the main part should not substitute with the STB21N65M5 without thermal design review, as the substitute is rated for 125W maximum.

Frequently Asked Questions (FAQ)

Q: Can the STB21N65M5 be used as a direct replacement for the IPB65R190CFDATMA2?

A: The STB21N65M5 is electrically compatible for applications operating within its 17A continuous drain current and 125W power dissipation limits. Both parts share identical 650V voltage rating, 190mOhm on-state resistance, and TO-263-3 package compatibility. Applications requiring the full 17.5A rating or 151W dissipation must use the IPB65R190CFDATMA2.

Q: Are there package compatibility concerns when substituting between these parts?

A: No. Both the IPB65R190CFDATMA2 and STB21N65M5 use the TO-263-3 (D2PAK) surface mount package with identical pinout and thermal interface specifications. PCB layout and thermal management designs require no modification.

Q: How do the gate charge specifications affect substitution?

A: The STB21N65M5 has lower gate charge (50nC versus 68nC at 10V). This difference may improve switching speed and reduce gate driver power consumption in the substitute part. No gate driver redesign is required for substitution.

Q: What are the compliance implications of using the STB21N65M5 as a substitute?

A: Both parts maintain RoHS3 compliance, REACH unaffected status, and MSL 1 (unlimited) moisture sensitivity rating. No compliance documentation changes are required when substituting between these parts.

Q: Should thermal design be modified when using the STB21N65M5?

A: The STB21N65M5 has a lower maximum power dissipation rating (125W versus 151W). Thermal designs based on the IPB65R190CFDATMA2's 151W rating should be reviewed to confirm the substitute's 125W rating is adequate for the application's actual power dissipation.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message