IPB65R190CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPB65R190CFDATMA1 is an N-Channel 650V 17.5A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-263-3 (D2PAK) surface mount configuration with a maximum power dissipation of 151W at case temperature. The part is currently listed as Obsolete product status, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the 650V drain-source voltage class while accommodating variations in continuous drain current, on-resistance characteristics, and gate charge specifications.

Substiute Parts

IPB65R190CFDATMA1
Infineon TechnologiesIn Stock: 714IPB65R190CFDATMA1 Datasheet
IPB65R190CFDATMA1
Current Part
IPB65R190CFDATMA2
Infineon TechnologiesIn Stock: 800IPB65R190CFDATMA2 Datasheet
IPB65R190CFDATMA2
MFR Recommended
AOB25S65L
Alpha & Omega Semiconductor Inc.In Stock: 1569AOB25S65L Datasheet
AOB25S65L
MFR Recommended
IXFA22N65X2
IXYSIn Stock: 1317IXFA22N65X2 Datasheet
IXFA22N65X2
MFR Recommended
SIHB24N65EF-GE3
Vishay SiliconixIn Stock: 1153SIHB24N65EF-GE3 Datasheet
SIHB24N65EF-GE3
MFR Recommended
STB18N65M5
STMicroelectronicsIn Stock: 1497STB18N65M5 Datasheet
STB18N65M5
MFR Recommended
STB20N65M5
STMicroelectronicsIn Stock: 27405STB20N65M5 Datasheet
STB20N65M5
MFR Recommended
STB26N60M2
STMicroelectronicsIn Stock: 2157STB26N60M2 Datasheet
STB26N60M2
MFR Recommended
STB28N60M2
STMicroelectronicsIn Stock: 2011STB28N60M2 Datasheet
STB28N60M2
MFR Recommended
STB31N65M5
STMicroelectronicsIn Stock: 7385STB31N65M5 Datasheet
STB31N65M5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 650 V
Continuous Drain Current (Id) @ 25°C 17.5 A (Tc)
On-Resistance (Rds On Max) @ 7.3A, 10V 190 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 730µA 4.5 V
Gate Charge (Qg Max) @ 10V 68 nC
Power Dissipation (Max) 151 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-263-3, D2PAK Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IPB65R190CFDATMA1 is determined by the following critical parameters:

Voltage Class Requirement: All substitute parts must maintain 650V drain-source voltage rating to ensure compatibility with the original circuit design specifications.

Current Rating Compatibility: Substitute parts with continuous drain current ratings between 15A and 25A are acceptable, as they operate within the thermal and electrical envelope of the original 17.5A specification. Parts rated below 15A are insufficient; parts rated above 25A represent over-specification but remain functionally compatible.

On-Resistance (Rds On) Tolerance: The original part specifies 190mOhm maximum at 7.3A and 10V gate drive. Substitute parts with Rds On values ranging from 148mOhm to 220mOhm are acceptable, as this variation falls within normal manufacturing tolerances and does not compromise circuit performance.

Gate Charge (Qg) Specification: Gate charge values between 26.4nC and 122nC are acceptable. Lower gate charge improves switching speed; higher values remain compatible with standard gate driver circuits.

Package Compatibility: All substitute parts must use TO-263-3 (D2PAK) or equivalent surface mount packaging to ensure mechanical and thermal interface compatibility.

Product Status Consideration: Active status parts are preferred for new procurement; parts with "Not For New Designs" status are acceptable for legacy system support only.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (mOhm) Qg Max (nC) Power Diss. (W) Product Status
IPB65R190CFDATMA1 Infineon 650 17.5 190 68 151 Obsolete
IPB65R190CFDATMA2 Infineon 650 17.5 190 68 151 Active
STB20N65M5 STMicroelectronics 650 18 190 36 130 Active
STB18N65M5 STMicroelectronics 650 15 220 31 110 Active
STB31N65M5 STMicroelectronics 650 22 148 45 150 Active
IXFA22N65X2 IXYS 650 22 160 38 390 Active
SIHB24N65EF-GE3 Vishay Siliconix 650 24 156 122 250 Active
AOB25S65L Alpha & Omega Semiconductor 650 25 190 26.4 357 Not For New Designs

Engineering Selection Recommendations

Primary Substitute (Direct Replacement): IPB65R190CFDATMA2 from Infineon Technologies is the direct equivalent to the obsolete IPB65R190CFDATMA1. This part maintains identical electrical specifications (650V, 17.5A, 190mOhm, 68nC) and packaging (TO-263-3, D2PAK). The only difference is product status change from Obsolete to Active and packaging format change from Cut Tape to Tape & Reel. This part is ROHS3 compliant and carries unlimited moisture sensitivity level (MSL 1).

Secondary Substitutes (Functional Equivalents): STB20N65M5 from STMicroelectronics provides near-identical performance with 18A continuous drain current, 190mOhm on-resistance, and 650V voltage rating. Gate charge is reduced to 36nC, improving switching characteristics. This part is Active status and ROHS3 compliant.

STB31N65M5 from STMicroelectronics offers superior on-resistance performance at 148mOhm with 22A continuous drain current and 650V rating. Power dissipation capability is 150W, matching the original specification. This part is Active status and ROHS3 compliant.

Higher Current Alternatives: IXFA22N65X2 (IXYS), SIHB24N65EF-GE3 (Vishay Siliconix), and AOB25S65L (Alpha & Omega Semiconductor) provide 22A to 25A continuous drain current ratings with 650V voltage class. These parts are suitable for applications requiring higher current capacity while maintaining voltage compatibility. All are ROHS3 compliant. AOB25S65L carries "Not For New Designs" status and should be used only for legacy system support.

Lower Current Alternative: STB18N65M5 from STMicroelectronics provides 15A continuous drain current with 220mOhm on-resistance and 650V rating. This part is suitable for applications with reduced current requirements. Active status and ROHS3 compliant.

All recommended substitutes maintain TO-263-3 (D2PAK) surface mount packaging, -55°C to 150°C operating temperature range, and ROHS3 compliance with unlimited moisture sensitivity level.

Frequently Asked Questions (FAQ)

Q: Can IPB65R190CFDATMA2 be used as a direct replacement for IPB65R190CFDATMA1?

A: Yes. IPB65R190CFDATMA2 is the direct equivalent with identical electrical specifications (650V, 17.5A, 190mOhm on-resistance, 68nC gate charge) and identical TO-263-3 D2PAK packaging. The part transitions from Obsolete to Active product status. Packaging format changes from Cut Tape to Tape & Reel, which affects procurement and handling but not electrical performance.

Q: What is the minimum continuous drain current acceptable for substitution?

A: The minimum acceptable continuous drain current is 15A, as represented by STB18N65M5. This maintains adequate current capacity for the original circuit design. Parts rated below 15A do not provide sufficient current handling capability.

Q: Are there performance differences between STB20N65M5 and the original IPB65R190CFDATMA1?

A: STB20N65M5 maintains identical on-resistance (190mOhm) and voltage rating (650V) with slightly higher continuous drain current (18A versus 17.5A). Gate charge is reduced from 68nC to 36nC, resulting in faster switching characteristics. Power dissipation is 130W versus 151W. These differences represent improved performance within the same electrical class.

Q: Can STB31N65M5 be used in place of the original part?

A: Yes. STB31N65M5 provides superior on-resistance performance (148mOhm versus 190mOhm) with higher continuous drain current (22A versus 17.5A) and identical 650V voltage rating. Power dissipation capability is 150W, matching the original specification. The improved on-resistance reduces heat generation and improves efficiency.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (26.4nC in AOB25S65L) enables faster switching and reduces gate driver power consumption. Higher gate charge (122nC in SIHB24N65EF-GE3) requires more gate driver current but remains compatible with standard gate driver circuits. The original part specifies 68nC, which is mid-range among available substitutes.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts carry ROHS3 compliance certification. All parts also maintain unlimited moisture sensitivity level (MSL 1), indicating no special storage or handling requirements.

Q: What is the difference between Cut Tape and Tape & Reel packaging?

A: Cut Tape (CT) packaging provides individual components cut from the reel for manual handling and small-quantity procurement. Tape & Reel (TR) packaging maintains components on continuous reel format for automated assembly equipment. Both formats contain identical components; packaging format affects procurement logistics and assembly process compatibility only.

Q: Can parts with 600V rating substitute for the 650V original part?

A: No. Parts with 600V drain-source voltage rating (such as STB26N60M2 and STB28N60M2) do not meet the voltage class requirement and cannot be used as substitutes. The original circuit design specifies 650V minimum voltage rating for system safety margin.

Q: Why is AOB25S65L marked "Not For New Designs"?

A: AOB25S65L carries "Not For New Designs" product status, indicating the manufacturer has discontinued active development and recommends against use in new circuit designs. This part remains acceptable for legacy system support and repair applications where component compatibility with existing designs is required.

Q: What packaging considerations apply to all substitute parts?

A: All substitute parts use TO-263-3 (D2PAK) surface mount packaging with identical mechanical dimensions and thermal interface characteristics. This ensures direct mechanical and thermal compatibility with the original circuit board layout and thermal management design. No PCB modifications are required for package substitution.

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