IPB65R190C7ATMA2 Equivalent & Substitute Parts

Part Overview

The IPB65R190C7ATMA2 is an N-Channel 650V 13A MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ C7 series. This device is rated for 72W power dissipation and is housed in a TO-263-3 (D2PAK) surface mount package. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for this MOSFET category. Substitution is necessary when the primary part becomes unavailable, when alternative sourcing is required, or when design flexibility across multiple suppliers is needed while maintaining functional compatibility.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	13	A
Rds On (Max) @ 5.7A, 10V	190	mOhm
Gate Charge (Qg) @ 10V	23	nC
Power Dissipation (Max)	72	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution logic for the IPB65R190C7ATMA2 is based on the following critical parameters:

Voltage Rating (Vdss): The 650V rating establishes the maximum drain-source voltage capability. Substitute parts must maintain this voltage class or higher to ensure safe operation in the target application circuit.

Continuous Drain Current (Id): The 13A rating at 25°C defines the current-handling capacity. Substitute parts with equal or higher current ratings are acceptable, as they provide equivalent or superior current capability.

On-State Resistance (Rds On): The 190mOhm specification at specified gate and drain conditions determines conduction losses. Substitute parts with equal or lower Rds On values maintain or improve efficiency characteristics.

Package and Mounting: All substitute parts must use the TO-263-3 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management designs.

Compliance and Status: All substitute parts must maintain RoHS3 compliance and MSL 1 rating. Product status (Active or Not For New Designs) is noted for design planning purposes.

Parameter Comparison

Parameter	IPB65R190C7ATMA2	AOB25S65L	SIHB21N65EF-GE3	SIHB22N60ET1-GE3	STB28N60DM2	STB30N80K5
Manufacturer	Infineon	Alpha & Omega	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	650	600	600	800
Id @ 25°C (A)	13	25	21	21	21	24
Rds On (Max) (mOhm)	190	190	180	180	160	180
Gate Charge Qg (nC)	23	26.4	106	86	34	43
Power Dissipation (W)	72	357	208	227	170	250
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263-3	TO-263	TO-263	TO-263	TO-263	TO-263
Product Status	Active	Not For New Designs	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes
MSL Rating	1	1	1	1	1	1

Engineering Selection Recommendations

Primary Substitutes (Active Status, 650V Class):

SIHB21N65EF-GE3 (Vishay Siliconix) is the preferred substitute for new designs. This part maintains the 650V voltage rating, exceeds the 13A current requirement with 21A capability, and delivers superior on-state resistance (180mOhm vs. 190mOhm). The part is in Active product status with extensive inventory availability (89,922 pcs). All compliance certifications match the primary part.

Secondary Substitutes (Active Status, Voltage Variants):

STB28N60DM2 (STMicroelectronics) operates at 600V, which is 50V below the primary part's rating. This part is suitable for applications where the circuit voltage does not exceed 600V. It provides 21A current capability and the lowest on-state resistance (160mOhm) among all substitutes, resulting in reduced conduction losses. Product status is Active with maximum inventory availability (1,000,100 pcs).

STB30N80K5 (STMicroelectronics) operates at 800V, providing 150V margin above the primary part's rating. This part is suitable for applications requiring higher voltage headroom. It delivers 24A current capability and 180mOhm on-state resistance. Product status is Active.

Alternative Substitute (Not For New Designs):

AOB25S65L (Alpha & Omega Semiconductor) maintains the 650V rating and provides 25A current capability with matching 190mOhm on-state resistance. However, this part carries "Not For New Designs" status and should be used only for legacy system maintenance or when other substitutes are unavailable.

Voltage Consideration:

SIHB22N60ET1-GE3 (Vishay Siliconix) operates at 600V and is suitable only for applications where circuit voltage does not exceed 600V. This part is in Active status with good inventory (6,946 pcs).

All substitute parts maintain RoHS3 compliance, MSL 1 rating, and TO-263-3 package compatibility with the primary part.

Frequently Asked Questions (FAQ)

Q: Can I substitute the IPB65R190C7ATMA2 with a lower voltage-rated MOSFET?

A: Substitution with lower voltage-rated parts (600V) is acceptable only if your circuit design operates below 600V. The STB28N60DM2 and SIHB22N60ET1-GE3 are suitable for 600V applications. However, if your circuit is designed for 650V operation, you must use a 650V-rated or higher substitute to maintain design margin and reliability.

Q: What is the difference between the substitute parts in terms of gate charge?

A: Gate charge (Qg) varies significantly among substitutes. The primary part has 23nC, while SIHB21N65EF-GE3 has 106nC and SIHB22N60ET1-GE3 has 86nC. Higher gate charge requires more energy from the gate driver circuit and increases switching losses. Lower gate charge (STB28N60DM2 at 34nC, STB30N80K5 at 43nC) reduces driver requirements and switching losses. Select based on your gate driver capability and switching frequency requirements.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use the TO-263-3 (D2PAK) surface mount package, which is mechanically and thermally compatible with the primary part. No PCB layout modifications are required for package substitution.

Q: What does "Not For New Designs" status mean for the AOB25S65L?

A: "Not For New Designs" indicates that the manufacturer is not recommending this part for new circuit designs. It may be in end-of-life phase or superseded by newer alternatives. Use this part only for maintaining existing systems or when other substitutes are unavailable. For new designs, select from parts with Active status: SIHB21N65EF-GE3, STB28N60DM2, STB30N80K5, or SIHB22N60ET1-GE3.

Q: How do I choose between the 650V and 800V substitutes?

A: Use 650V-rated substitutes (SIHB21N65EF-GE3, AOB25S65L) if your circuit is designed for 650V operation. Use the 800V substitute (STB30N80K5) only if your application requires higher voltage capability or if you need additional voltage margin for transient protection. Higher voltage ratings typically result in higher on-state resistance and larger die size, which may affect thermal performance.

Q: Can I use a substitute with higher current rating than the primary part?

A: Yes. All listed substitutes have equal or higher current ratings (21A to 25A vs. 13A). Higher current ratings provide design margin and do not create compatibility issues. The actual current drawn by your circuit remains unchanged; the higher rating simply indicates the device can safely handle more current if needed.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, matching the primary part's environmental certifications.

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