IPB65R150CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPB65R150CFDATMA1 is an N-Channel 650V 22.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-263-3 (D2PAK) surface mount configuration with a maximum power dissipation of 195.3W at case temperature. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while considering packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22.4	A
On-State Resistance (Rds On) @ 9.3A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 900µA	4.5	V
Gate Charge (Qg) @ 10V	86	nC
Input Capacitance (Ciss) @ 100V	2340	pF
Power Dissipation (Max)	195.3	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitute parts for the IPB65R150CFDATMA1 are classified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V or higher
Continuous Drain Current (Id): 22.4A or higher at 25°C
On-State Resistance (Rds On): 150mOhm or lower at specified gate voltage
Package Type: TO-263-3 (D2PAK) surface mount
FET Type: N-Channel MOSFET
Operating Temperature: -55°C to 150°C minimum

Grouping Logic:

Group 1 - Direct Parametric Equivalent: Parts with identical or superior electrical specifications and active product status. These parts maintain the same voltage rating, current capability, and on-state resistance characteristics.

Group 2 - Higher Current Capability: Parts rated for 650V with drain current exceeding 22.4A. These provide enhanced current handling with comparable or superior on-state resistance, suitable for applications requiring additional margin.

Group 3 - Lower Voltage Rating: Parts rated at 600V with comparable current and resistance specifications. These are suitable for applications where the full 650V rating is not required, offering alternative performance characteristics.

Group 4 - Enhanced Performance: Parts with superior gate charge characteristics or lower on-state resistance, enabling improved switching performance and reduced power dissipation.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Package	Status
IPB65R150CFDATMA1	Infineon	650	22.4	150	86	TO-263-3	Obsolete
IPB65R150CFDATMA2	Infineon	650	22.4	150	86	TO-263-3	Active
STB31N65M5	STMicroelectronics	650	22	148	45	TO-263-3	Active
STB20N65M5	STMicroelectronics	650	18	190	36	TO-263-3	Active
FCB110N65F	onsemi	650	35	110	145	TO-263-3	Not For New Designs
AOB25S65L	Alpha & Omega Semiconductor	650	25	190	26.4	TO-263-3	Not For New Designs
STB24NM60N	STMicroelectronics	600	17	190	46	TO-263-3	Active
STB28N60M2	STMicroelectronics	600	22	150	36	TO-263-3	Active
STB33N60M2	STMicroelectronics	600	26	125	45.5	TO-263-3	Active
SIHB22N60AE-GE3	Vishay Siliconix	600	20	180	96	TO-263-3	Active
TK16G60W,RVQ	Toshiba	600	15.8	190	38	D2PAK	Active

Engineering Selection Recommendations

Recommended Primary Substitute:

IPB65R150CFDATMA2 is the direct equivalent replacement for the obsolete IPB65R150CFDATMA1. Both parts share identical electrical specifications (650V, 22.4A, 150mOhm Rds On, 86nC gate charge) and are packaged in TO-263-3. The primary difference is product status: IPB65R150CFDATMA2 is active and available in Tape & Reel packaging, making it the preferred choice for design continuity. Both parts are ROHS3 compliant with MSL 1 rating and REACH unaffected status.

Alternative Substitutes by Application Requirements:

For applications requiring enhanced switching performance with reduced gate charge, STB31N65M5 provides 650V rating at 22A continuous current with significantly lower gate charge (45nC versus 86nC) and marginally superior on-state resistance (148mOhm). This part is active and suitable for designs prioritizing switching speed and efficiency.

For applications where 650V rating is mandatory and higher current margin is required, FCB110N65F offers 35A continuous current at 650V with superior on-state resistance (110mOhm). However, this part carries "Not For New Designs" status and should be used only for legacy system support.

For applications where voltage rating can be reduced to 600V, STB28N60M2 provides equivalent on-state resistance (150mOhm) at 22A with active product status and improved gate charge characteristics (36nC). STB33N60M2 offers higher current capability (26A) at 600V with superior on-state resistance (125mOhm) for applications requiring additional performance margin.

All recommended substitutes maintain TO-263-3 (D2PAK) surface mount packaging, compatible operating temperature range (-55°C to 150°C), and equivalent compliance certifications (ROHS3, MSL 1, REACH unaffected).

Frequently Asked Questions (FAQ)

Q: Can IPB65R150CFDATMA2 be used as a direct replacement for IPB65R150CFDATMA1?

A: Yes. IPB65R150CFDATMA2 is a direct parametric equivalent with identical electrical specifications and package type. The primary difference is product status (active versus obsolete) and packaging format (Tape & Reel versus Cut Tape). Both parts are electrically interchangeable without circuit modification.

Q: What is the key difference between 650V and 600V rated substitutes?

A: The voltage rating determines the maximum drain-to-source voltage the device can withstand. 650V-rated parts provide higher voltage margin and are suitable for applications with voltage transients or higher supply rails. 600V-rated parts are suitable only for applications where the maximum operating voltage does not exceed 600V. Substituting a 600V part into a 650V application risks device failure.

Q: Why does STB31N65M5 have lower gate charge than the original part?

A: Gate charge (Qg) is a characteristic of the specific MOSFET design and manufacturing process. STB31N65M5 uses STMicroelectronics' MDmesh™ V technology, which achieves lower gate charge through optimized die design. Lower gate charge enables faster switching transitions, reducing switching losses and improving overall circuit efficiency. This is a performance advantage, not a compatibility issue.

Q: Are all substitute parts available in the same packaging?

A: All listed substitutes use TO-263-3 (D2PAK) surface mount packaging, which is mechanically and electrically compatible with the original part. Packaging variants (Cut Tape, Tape & Reel, Tube) affect supply and handling but do not affect electrical performance or PCB mounting compatibility.

Q: What is the significance of "Not For New Designs" status?

A: Parts marked "Not For New Designs" are in mature or declining production phases. While electrically functional and available, manufacturers do not recommend their use in new product development. These parts are suitable for legacy system support, repair, and replacement applications where design changes are not feasible. For new designs, select parts with "Active" status.

Q: Can STB20N65M5 be used if the application requires lower current than 22.4A?

A: STB20N65M5 is rated for 18A continuous current, which is below the original part's 22.4A specification. This part should be used only in applications where the actual circuit current requirement does not exceed 18A. Using this part in a circuit designed for 22.4A operation risks thermal stress and potential device failure.

Q: What compliance certifications should I verify before substitution?

A: All listed substitutes maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status, matching the original part's certifications. Verify these certifications in the component datasheet before procurement to ensure regulatory compliance for your application.

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