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IPB65R125C7ATMA2 Equivalent & Substitute Parts
Part Overview
The IPB65R125C7ATMA2 is an N-Channel 650V 18A surface mount MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ C7 series. This device is designed for high-voltage switching applications requiring reliable performance in the 650V class. The part maintains Active product status with 1674 units in current inventory.
Substitute parts become necessary when the primary device experiences supply constraints, extended lead times, or when design requirements permit operation within alternative electrical and mechanical specifications. Equivalent devices must maintain compatibility across voltage rating, current handling, package type, and thermal characteristics to ensure functional interchangeability in the target application.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 650 | V |
| Continuous Drain Current (Id) @ 25°C | 18 | A |
| Rds On (Max) @ 8.9A, 10V | 125 | mOhm |
| Gate Charge (Qg) @ 10V | 35 | nC |
| Power Dissipation (Max) | 101 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | TO-263-3 (D2PAK) | |
| Mounting Type | Surface Mount | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution eligibility for the IPB65R125C7ATMA2 is determined by the following critical parameters:
Voltage Class Compatibility: The main part operates at 650V Vdss. Substitute parts must maintain equal or higher voltage rating to ensure safe operation within the application's voltage envelope.
Current Rating: The continuous drain current of 18A at 25°C establishes the minimum current handling requirement. Substitute parts with equal or higher current ratings are acceptable.
On-Resistance (Rds On): The maximum on-resistance of 125mOhm at specified conditions directly impacts power dissipation and thermal performance. Substitute parts with equal or lower on-resistance values maintain or improve efficiency.
Package and Mounting: The TO-263-3 (D2PAK) surface mount package defines the physical and thermal interface. Substitute parts must use identical or mechanically compatible package types.
Gate Charge: The 35nC gate charge specification affects switching speed and driver circuit requirements. Substitute parts with comparable or lower gate charge values ensure compatibility with existing gate drive circuits.
Temperature Range: Operating temperature capability from -55°C to 150°C must be maintained or exceeded in substitute devices.
Compliance Standards: RoHS3 compliance and REACH unaffected status are mandatory for equivalent parts in regulated applications.
Parameter Comparison
| Parameter | IPB65R125C7ATMA2 (Main) | STB36NM60N (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | STMicroelectronics | |
| Series | CoolMOS™ C7 | MDmesh™ II | |
| Drain to Source Voltage (Vdss) | 650 | 600 | V |
| Continuous Drain Current (Id) @ 25°C | 18 | 29 | A |
| Rds On (Max) | 125 @ 8.9A, 10V | 105 @ 14.5A, 10V | mOhm |
| Gate Charge (Qg) @ 10V | 35 | 83.6 | nC |
| Power Dissipation (Max) | 101 | 210 | W |
| Operating Temperature (Max) | 150 | 150 | °C |
| Package Type | TO-263-3 (D2PAK) | TO-263 (D2PAK) | |
| Mounting Type | Surface Mount | Surface Mount | |
| Product Status | Active | Last Time Buy | |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | |
| Automotive Grade | Not specified | AEC-Q101 |
Engineering Selection Recommendations
Primary Consideration - Product Status: The IPB65R125C7ATMA2 maintains Active status with established inventory (1674 units). The STB36NM60N substitute carries Last Time Buy status, indicating limited future availability. Selection of the main part is preferred for new designs requiring long-term supply continuity.
Voltage Rating Trade-off: The STB36NM60N operates at 600V Vdss compared to the main part's 650V rating. This 50V reduction in voltage margin may be acceptable in applications with defined voltage headroom, but represents a design constraint that must be verified against the specific circuit's maximum operating voltage.
Current and Thermal Performance: The STB36NM60N provides 29A continuous current versus 18A for the main part, with superior power dissipation capability (210W vs. 101W). These characteristics enable operation in higher-current applications or improved thermal margins in equivalent-current designs.
Gate Charge Impact: The STB36NM60N exhibits significantly higher gate charge (83.6nC vs. 35nC), requiring verification that existing gate drive circuits can supply the additional charge without exceeding switching frequency or thermal limits.
Compliance and Qualification: Both parts maintain ROHS3 compliance and REACH unaffected status. The STB36NM60N includes AEC-Q101 automotive qualification, making it suitable for automotive applications where the main part lacks this certification.
Package Compatibility: Both devices use TO-263 (D2PAK) surface mount packages with identical pinout and thermal interface, ensuring mechanical and thermal interchangeability.
Frequently Asked Questions (FAQ)
Q: Can the STB36NM60N directly replace the IPB65R125C7ATMA2 in all applications?
A: Direct replacement is possible only in applications where the circuit's maximum operating voltage does not exceed 600V. The 50V reduction in Vdss rating must be verified against the specific application's voltage envelope. All other electrical parameters (current, on-resistance, temperature range) support interchangeability.
Q: What impact does the higher gate charge of the STB36NM60N have on circuit performance?
A: The STB36NM60N requires 83.6nC of gate charge compared to 35nC for the main part. This increases the charge that the gate driver must supply per switching cycle. Verification is required to confirm the gate driver circuit can deliver this additional charge without exceeding its current rating or causing unacceptable switching delays.
Q: Are both parts suitable for automotive applications?
A: The STB36NM60N carries AEC-Q101 automotive qualification. The IPB65R125C7ATMA2 does not specify automotive qualification in the provided parameters. Selection depends on whether the application requires formal automotive-grade certification.
Q: What is the significance of the STB36NM60N's Last Time Buy status?
A: Last Time Buy status indicates that STMicroelectronics has announced end-of-life for this device. New orders may be accepted for a limited period, but long-term availability is not guaranteed. For new designs, the Active-status IPB65R125C7ATMA2 is the preferred choice.
Q: Can the improved thermal performance of the STB36NM60N allow operation at higher currents?
A: The STB36NM60N's higher power dissipation rating (210W vs. 101W) and higher continuous current rating (29A vs. 18A) enable operation in higher-current applications. However, the 600V voltage rating must still be verified as acceptable for the target circuit.
Q: Are the TO-263-3 and TO-263 packages identical?
A: Both designations refer to the D2PAK surface mount package with 2 leads plus thermal tab. The packages are mechanically and thermally compatible with identical pinout and footprint.
Q: What parameters must be verified before substituting the STB36NM60N for the IPB65R125C7ATMA2?
A: Verification must confirm: (1) maximum circuit voltage does not exceed 600V, (2) gate driver circuit can supply 83.6nC gate charge per switching cycle, (3) thermal design accommodates the different power dissipation characteristics, and (4) automotive qualification requirements are met if applicable.
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