IPB65R110CFDATMA1 Equivalent & Substitute Parts

Part Overview

The IPB65R110CFDATMA1 is an N-Channel 650V 31.2A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-263-3 (D2PAK) surface mount configuration with a maximum power dissipation of 277.8W at case temperature. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating the same or compatible package footprints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	31.2	A
On-Resistance (Rds On Max) @ 12.7A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1.3mA	4.5	V
Gate Charge (Qg Max) @ 10V	118	nC
Input Capacitance (Ciss Max) @ 100V	3240	pF
Power Dissipation (Max)	277.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPB65R110CFDATMA1 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V (exact match required)
Continuous Drain Current (Id): 31.2A minimum at 25°C case temperature
On-Resistance (Rds On): 110mOhm maximum at specified gate voltage and current
Package Type: TO-263-3 (D2PAK) or compatible surface mount D2PAK footprint
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): 4.5V to 5V range acceptable
Gate Charge (Qg): 118nC reference; parts within ±30% acceptable for switching performance
Input Capacitance (Ciss): 3240pF reference; variations acceptable within thermal and switching loss budgets
Power Dissipation: 277.8W minimum at case temperature

Substitute Classification:

Parametric Equivalent (Direct Replacement):

IPB65R110CFDATMA2: Identical electrical specifications; differs only in packaging format (Tape & Reel vs. Cut Tape); active product status

Functional Equivalents (Electrical Compatibility with Parameter Variations):

STB30N65M5, STB31N65M5, STB34N65M5, STB35N65M5: Meet 650V Vdss and D2PAK package requirements; continuous drain current ranges 22A to 28A; on-resistance 98mOhm to 148mOhm; active product status; suitable for applications where current and power dissipation margins permit lower ratings

Cross-Manufacturer Alternatives (Conditional Compatibility):

FCB110N65F (onsemi): 650V Vdss, 35A continuous current, 110mOhm Rds On; higher current rating; not for new designs
SIHB33N60ET5-GE3 (Vishay Siliconix): 600V Vdss (50V lower), 33A continuous current, 99mOhm Rds On; active product; suitable only for applications with 600V maximum system voltage

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Package	Status
IPB65R110CFDATMA1	Infineon	650	31.2	110	118	3240	277.8	TO-263-3	Obsolete
IPB65R110CFDATMA2	Infineon	650	31.2	110	118	3240	277.8	TO-263-3	Active
STB30N65M5	STMicroelectronics	650	22	139	64	2880	140	D2PAK	Active
STB31N65M5	STMicroelectronics	650	22	148	45	1865	150	TO-263	Active
STB34N65M5	STMicroelectronics	650	28	110	62.5	2700	190	TO-263	Active
STB35N65M5	STMicroelectronics	650	27	98	83	3750	160	D2PAK	Active
FCB110N65F	onsemi	650	35	110	145	4895	357	TO-263	Not For New Designs
SIHB33N60ET5-GE3	Vishay Siliconix	600	33	99	150	3508	278	TO-263	Active

Engineering Selection Recommendations

Recommended Primary Substitute:

IPB65R110CFDATMA2 is the direct parametric equivalent and recommended first choice for replacement of the obsolete IPB65R110CFDATMA1. This part maintains identical electrical specifications (650V Vdss, 31.2A continuous current, 110mOhm Rds On) and is packaged in the same TO-263-3 (D2PAK) footprint. The only difference is packaging format (Tape & Reel vs. Cut Tape). The part carries active product status from Infineon Technologies, ensuring long-term availability and supply chain continuity. RoHS3 compliance and REACH unaffected status are maintained.

Secondary Substitutes for Current-Derating Applications:

STB34N65M5 (STMicroelectronics) provides functional equivalence when application design permits current derating from 31.2A to 28A. This part matches the 650V Vdss rating, maintains 110mOhm Rds On specification, and is packaged in TO-263 (D2PAK) compatible footprint. Active product status and full compliance certifications apply. Gate charge (62.5nC) is lower than the original part, resulting in reduced switching losses.

STB35N65M5 (STMicroelectronics) is suitable for applications tolerating 27A continuous current with 650V Vdss. On-resistance improves to 98mOhm, reducing conduction losses. Input capacitance increases to 3750pF, which may affect switching speed in high-frequency applications. Active product status and compliance certifications confirmed.

Cross-Manufacturer Alternative:

FCB110N65F (onsemi) provides electrical equivalence with higher current capability (35A) and identical 110mOhm Rds On. However, this part carries "Not For New Designs" status, limiting its suitability for new product development. Gate charge increases to 145nC, and input capacitance rises to 4895pF, affecting switching characteristics. Use only in legacy system maintenance where supply of the primary substitute is unavailable.

Voltage-Derating Alternative:

SIHB33N60ET5-GE3 (Vishay Siliconix) operates at 600V Vdss (50V lower than the original specification). This part is suitable only for applications with maximum system voltage of 600V or lower. Continuous current capability (33A) exceeds the original part. On-resistance improves to 99mOhm. Active product status and full compliance certifications apply. Gate charge (150nC) and input capacitance (3508pF) are higher, affecting switching performance.

Compliance and Certification Status:

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements. ECCN classification remains EAR99 for all substitutes.

Frequently Asked Questions (FAQ)

Q1: Can IPB65R110CFDATMA2 be used as a direct drop-in replacement for IPB65R110CFDATMA1?

Yes. IPB65R110CFDATMA2 is a parametric equivalent with identical electrical specifications and the same TO-263-3 (D2PAK) package footprint. The only difference is packaging format (Tape & Reel vs. Cut Tape). No circuit modifications or thermal design changes are required. The part is currently in active production status.

Q2: What is the primary reason the IPB65R110CFDATMA1 is obsolete?

The IPB65R110CFDATMA1 has been superseded by the IPB65R110CFDATMA2 within Infineon's product portfolio. The newer variant offers identical performance with improved supply chain management and active production support. Obsolescence is a normal product lifecycle transition and does not indicate a design deficiency.

Q3: Can STMicroelectronics STB30N65M5, STB31N65M5, STB34N65M5, or STB35N65M5 be used in place of the IPB65R110CFDATMA1?

These parts are functional equivalents suitable only for applications where continuous drain current can be reduced from 31.2A to 22A–28A range. All four parts maintain 650V Vdss rating and D2PAK package compatibility. On-resistance specifications (98mOhm to 148mOhm) are within acceptable ranges for most switching applications. Gate charge and input capacitance vary, affecting switching speed and losses. Thermal design must be re-evaluated based on lower power dissipation ratings (140W to 190W vs. 277.8W original).

Q4: Is the onsemi FCB110N65F suitable for new product designs?

No. FCB110N65F carries "Not For New Designs" status from onsemi. While electrical specifications are compatible (650V Vdss, 110mOhm Rds On, 35A continuous current), this part should be used only for legacy system maintenance or when primary substitutes are unavailable. New designs should prioritize IPB65R110CFDATMA2 or active STMicroelectronics alternatives.

Q5: What are the key differences between the Infineon CoolMOS™ CFD2 series (IPB65R110CFDATMA2) and STMicroelectronics MDmesh™ V series (STB30N65M5, STB31N65M5, STB34N65M5, STB35N65M5)?

Both series operate at 650V Vdss and use D2PAK packaging. The primary differences are continuous current ratings (Infineon 31.2A vs. STMicroelectronics 22A–28A), gate charge characteristics (Infineon 118nC vs. STMicroelectronics 45nC–83nC), and input capacitance (Infineon 3240pF vs. STMicroelectronics 1865pF–3750pF). These variations affect switching speed, switching losses, and thermal performance. Circuit design and thermal management must be validated for each substitution.

Q6: Can the Vishay Siliconix SIHB33N60ET5-GE3 be used in 650V applications?

No. SIHB33N60ET5-GE3 is rated for 600V Vdss maximum, which is 50V lower than the IPB65R110CFDATMA1 specification. Using this part in a 650V system exceeds its voltage rating and creates reliability risk. This part is suitable only for applications with maximum system voltage of 600V or lower.

Q7: What packaging considerations apply when substituting these parts?

All recommended substitutes use TO-263-3 (D2PAK) or compatible D2PAK surface mount packages. PCB footprints are identical or compatible. Lead spacing, solder pad dimensions, and thermal tab geometry are standardized across all parts listed. No PCB redesign is required for package compatibility. Verify thermal interface material and heatsink mounting compatibility based on specific application thermal requirements.

Q8: Are there any gate drive voltage differences between the original part and substitutes?

All parts in this comparison use 10V nominal gate drive voltage for maximum on-resistance specification. Gate threshold voltage (Vgs(th)) ranges from 4V to 5V across all parts, which is within standard gate driver output voltage tolerance. Existing gate drive circuits require no modification for any of the recommended substitutes.

Q9: How do switching characteristics differ between these parts?

Gate charge (Qg) and input capacitance (Ciss) directly affect switching speed and switching losses. The original IPB65R110CFDATMA1 has Qg of 118nC and Ciss of 3240pF. STMicroelectronics parts range from 45nC to 83nC gate charge and 1865pF to 3750pF input capacitance. Lower gate charge reduces switching losses but may increase switching speed. Higher input capacitance increases gate drive current requirements. Circuit simulation or bench testing is recommended to validate switching performance in high-frequency applications.

Q10: What compliance certifications apply to all substitute parts?

All parts listed maintain RoHS3 compliance and REACH unaffected status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling or baking requirements. ECCN classification is EAR99 for all parts. These certifications ensure compatibility with modern manufacturing processes and regulatory requirements.

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