IPB60R520CPATMA1 Equivalent & Substitute Parts

Part Overview

The IPB60R520CPATMA1 is an N-Channel 600V 6.8A MOSFET manufactured by Infineon Technologies, housed in a D2PAK (TO-263-3) surface mount package. This device belongs to the CoolMOS™ CP series and is designed for high-voltage switching applications requiring efficient thermal management. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the D2PAK package footprint and preserve critical electrical characteristics including drain-source voltage rating, continuous drain current capability, and on-state resistance specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.8	A
On-State Resistance (Rds On) @ 3.8A, 10V	520	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Gate Charge (Qg) @ 10V	31	nC
Power Dissipation (Max)	66	W
Operating Temperature Range	-55 to 150	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPB60R520CPATMA1 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 6.8A at 25°C
Package Type: Must be D2PAK (TO-263-3) or compatible surface mount package
On-State Resistance (Rds On): Should not significantly exceed 520mOhm to maintain thermal performance
Operating Temperature Range: Must support -55°C to 150°C or equivalent

Substitute parts are grouped into two categories:

Category 1 - Direct D2PAK Package Substitutes (Preferred): Parts maintaining the exact D2PAK footprint with equivalent or superior electrical ratings. These include R6007KNJTL, R6009KNJTL, STB13NK60ZT4, and STB14NK60ZT4.

Category 2 - Alternative Package Substitutes: Parts with different surface mount packages (LPTS, DPAK, TO-252AA) that provide electrical equivalence but require PCB layout modification. These include R6007ENJTL, R6009ENJTL, SIHD6N65ET1-GE3, STB8N65M5, and STD10NM60ND.

Category 3 - Through-Hole Alternative: STP10N60M2 provides electrical compatibility but requires different mounting methodology (TO-220 package).

All substitute parts maintain N-Channel MOSFET technology with metal oxide construction and surface mount or through-hole mounting options.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Package	Status
IPB60R520CPATMA1	Infineon	600	6.8	520	31	66	-55 to 150	D2PAK	Obsolete
R6007KNJTL	Rohm	600	7	620	14.5	78	-55 to 150	LPTS	Active
R6007ENJTL	Rohm	600	7	620	20	40	-55 to 150	LPTS	Active
R6009KNJTL	Rohm	600	9	535	16.5	94	-55 to 150	LPTS	Active
R6009ENJTL	Rohm	600	9	535	23	40	-55 to 150	LPTS	Active
SIHD6N65ET1-GE3	Vishay Siliconix	650	7	600	48	78	-55 to 150	TO-252AA	Active
STB8N65M5	STMicroelectronics	650	7	600	15	70	-55 to 150	D2PAK	Active
STB13NK60ZT4	STMicroelectronics	600	13	550	92	150	-55 to 150	D2PAK	Active
STB14NK60ZT4	STMicroelectronics	600	13.5	500	75	160	-55 to 150	D2PAK	Active
STD10NM60ND	STMicroelectronics	600	8	600	20	70	-55 to 150	DPAK	Active
STP10N60M2	STMicroelectronics	600	7.5	600	13.5	85	-55 to 150	TO-220	Active

Engineering Selection Recommendations

For Direct PCB Replacement (D2PAK Package):

STB14NK60ZT4 and STB13NK60ZT4 are the preferred substitutes when D2PAK package compatibility is required. Both parts are manufactured by STMicroelectronics, carry active product status, and maintain the 600V Vdss rating with drain current ratings exceeding the original 6.8A specification. STB14NK60ZT4 offers superior on-state resistance (500mOhm) and higher power dissipation capability (160W), making it suitable for applications requiring enhanced thermal performance. Both parts comply with RoHS3 and maintain REACH compliance.

STB8N65M5 provides an alternative D2PAK option with 650V rating and 7A continuous current, offering additional voltage margin. This part is manufactured by STMicroelectronics and carries active status with RoHS3 compliance.

For Alternative Package Implementations:

R6009KNJTL and R6007KNJTL (Rohm Semiconductor, LPTS package) deliver active product status with full temperature range support (-55°C to 150°C). These parts require PCB layout modification due to different package geometry but provide equivalent electrical performance with RoHS3 compliance.

STD10NM60ND (STMicroelectronics, DPAK package) supports 8A continuous current with 600V rating and active product status, suitable for applications where DPAK footprint is acceptable.

For Through-Hole Applications:

STP10N60M2 (STMicroelectronics, TO-220 package) provides 7.5A continuous current at 600V with active status and full temperature range support, applicable only where through-hole mounting is required.

All recommended substitutes maintain N-Channel MOSFET technology, surface or through-hole mounting options, and compliance certifications (RoHS3, REACH, EAR99) consistent with the original part specifications.

Frequently Asked Questions (FAQ)

Q1: Can R6007KNJTL directly replace IPB60R520CPATMA1 on the existing PCB?

R6007KNJTL is electrically compatible with equivalent 600V rating and 7A continuous current exceeding the original 6.8A specification. However, the LPTS package differs from the D2PAK footprint, requiring PCB layout modification. For direct PCB replacement without layout changes, use STB14NK60ZT4 or STB13NK60ZT4, which maintain D2PAK compatibility.

Q2: What is the significance of on-state resistance (Rds On) differences between substitute parts?

On-state resistance directly affects power dissipation and thermal performance. The original IPB60R520CPATMA1 specifies 520mOhm at 3.8A and 10V gate voltage. Substitute parts with higher Rds On values (such as 600mOhm) will generate proportionally more heat during operation. Selection should account for thermal management capability in the target application. Lower Rds On values (500mOhm or less) provide improved efficiency.

Q3: Why do some substitutes have higher voltage ratings (650V) than the original 600V specification?

Higher voltage ratings provide additional design margin and component availability flexibility. A 650V-rated device operates safely in 600V applications with improved reliability margin. Parts such as SIHD6N65ET1-GE3 and STB8N65M5 offer this advantage while maintaining all other electrical parameters within acceptable ranges.

Q4: Are all substitute parts RoHS3 compliant?

All recommended active substitute parts carry RoHS3 compliance certification. The original IPB60R520CPATMA1 is listed as obsolete and does not carry RoHS3 status. Substitutes from Rohm Semiconductor and STMicroelectronics explicitly state ROHS3 Compliant status in their specifications.

Q5: What is the difference between LPTS and D2PAK packages?

Both are surface mount packages designed for similar thermal and electrical applications. D2PAK (TO-263-3) and LPTS packages have different physical footprints and pin configurations. D2PAK is more widely used in legacy designs. LPTS packages are common in Rohm Semiconductor product lines. PCB layout modification is required when switching between these package types.

Q6: Can STD10NM60ND be used as a substitute despite its DPAK package?

STD10NM60ND is electrically compatible with 600V rating and 8A continuous current. The DPAK package (TO-252-3) differs from D2PAK, requiring PCB layout modification. This part is suitable only if DPAK footprint compatibility exists in the target application or if PCB redesign is acceptable.

Q7: Is STP10N60M2 suitable for surface mount production?

STP10N60M2 is a through-hole TO-220 package device, not suitable for surface mount production. This part is applicable only for through-hole assembly processes. For surface mount requirements, select from D2PAK, LPTS, DPAK, or TO-252AA package options.

Q8: What is the impact of gate charge (Qg) differences on circuit performance?

Gate charge affects switching speed and driver circuit requirements. The original part specifies 31nC at 10V. Substitute parts range from 13.5nC to 92nC. Lower gate charge values enable faster switching with reduced driver power consumption. Higher values require more robust gate drive circuits. Circuit design should account for these differences in switching frequency and driver capability.

Q9: Do all substitutes support the full -55°C to 150°C operating temperature range?

Most active substitutes support the full -55°C to 150°C range. STB8N65M5 and R6007ENJTL and R6009ENJTL specify only 150°C maximum (no lower temperature limit specified in provided data). Verify specific temperature requirements for your application before final selection.

Q10: What compliance certifications are critical for component selection?

All recommended substitutes maintain REACH compliance and EAR99 export classification consistent with the original part. RoHS3 compliance is standard across active substitutes. HTSUS code 8541.29.0095 applies uniformly to all N-Channel MOSFET devices in this category. Moisture Sensitivity Level (MSL) 1 (Unlimited) is maintained across all parts, eliminating moisture handling concerns.

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