IPB60R299CPATMA1 Equivalent & Substitute Parts

Part Overview

The IPB60R299CPATMA1 is an N-Channel 600V 11A MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CP series. This device is rated for 96W power dissipation and features a maximum on-resistance of 299mOhm at 6.6A and 10V gate drive. The part is packaged in TO-263-3 (D2PAK) surface mount configuration with unlimited moisture sensitivity level (MSL 1).

The IPB60R299CPATMA1 has reached obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications requiring 600V N-Channel MOSFET functionality in D2PAK packaging.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A
On-Resistance (Rds On Max) @ 6.6A, 10V	299	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 440µA	3.5	V
Gate Charge (Qg Max) @ 10V	29	nC
Input Capacitance (Ciss Max) @ 100V	1100	pF
Power Dissipation (Max)	96	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPB60R299CPATMA1 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package/Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id) @ 25°C: minimum 11A
On-Resistance (Rds On Max): ≤ 299mOhm (lower values acceptable)
Gate Threshold Voltage (Vgs(th) Max): ≤ 3.5V to 5V range
Gate Charge (Qg Max): ≤ 29nC to 54nC range
Operating Temperature: -55°C to 150°C minimum

Substitute parts must maintain electrical compatibility within the 600V class, support equivalent or higher continuous drain current ratings, and be available in compatible D2PAK surface mount packaging. Parts with improved on-resistance characteristics or lower gate charge are acceptable substitutes provided all mandatory criteria are met.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Power Diss. (W)	Temp Range (°C)	Status
IPB60R299CPATMA1	Infineon	600	11	299	3.5	29	96	-55 to 150	Obsolete
IPB60R280P7ATMA1	Infineon	600	12	280	4.0	18	53	-55 to 150	Active
STB37N60DM2AG	STMicroelectronics	600	28	110	5.0	54	210	-55 to 150	Active
FCB11N60TM	onsemi	600	11	380	5.0	52	125	-55 to 150	Not For New Designs
R6011ENJTL	Rohm Semiconductor	600	11	390	4.0	32	40	-55 to 150	Active
R6011KNJTL	Rohm Semiconductor	600	11	390	5.0	22	124	-55 to 150	Active
R6015ENJTL	Rohm Semiconductor	600	15	290	4.0	40	40	-55 to 150	Active
R6015KNJTL	Rohm Semiconductor	600	15	290	5.0	37.5	184	-55 to 150	Active
STB13N60M2	STMicroelectronics	600	11	380	4.0	17	110	-55 to 150	Active
STB13NM60N	STMicroelectronics	600	11	360	4.0	30	90	-55 to 150	Active
STB18N60M2	STMicroelectronics	600	13	280	4.0	21.5	110	-55 to 150	Active

Engineering Selection Recommendations

Primary Recommendation: IPB60R280P7ATMA1

The IPB60R280P7ATMA1 from Infineon Technologies is the direct successor within the same manufacturer family (CoolMOS™ P7 series). This part maintains 600V Vdss and 12A continuous drain current with improved on-resistance of 280mOhm. The part is in Active product status with RoHS3 compliance and unlimited MSL rating. Gate charge is reduced to 18nC, providing improved switching performance. This part is the preferred direct replacement for obsolete IPB60R299CPATMA1 applications.

Secondary Recommendation: STB13N60M2

The STB13N60M2 from STMicroelectronics (MDmesh™ II Plus series) provides 11A continuous drain current matching the original specification with 380mOhm on-resistance. This part is in Active status with RoHS3 compliance and full -55°C to 150°C operating range. Gate charge of 17nC provides superior switching characteristics. High inventory availability (143,988 pcs) ensures supply continuity.

Alternative for Higher Current Applications: STB37N60DM2AG

The STB37N60DM2AG from STMicroelectronics (MDmesh™ DM2 series) offers 28A continuous drain current with significantly lower on-resistance of 110mOhm. This part is suitable for applications requiring higher current capacity or lower conduction losses. AEC-Q101 automotive qualification is included. This part is in Active status with RoHS3 compliance.

Rohm Semiconductor Options: R6011KNJTL and R6015KNJTL

The R6011KNJTL provides 11A continuous drain current with 390mOhm on-resistance and 124W power dissipation, matching the thermal envelope of the original part. The R6015KNJTL offers 15A continuous drain current with 290mOhm on-resistance and 184W power dissipation for higher current applications. Both parts are in Active status with RoHS3 compliance and full temperature range support.

Not Recommended for New Designs: FCB11N60TM

The FCB11N60TM from onsemi (SuperFET™ series) matches the 11A current specification but carries "Not For New Designs" product status. While functionally compatible, this part should not be selected for new design implementations due to its obsolescence trajectory.

Frequently Asked Questions (FAQ)

Q: Can the IPB60R280P7ATMA1 directly replace the IPB60R299CPATMA1 in existing designs?

A: Yes. The IPB60R280P7ATMA1 maintains the same 600V Vdss, 11-12A continuous drain current range, and TO-263-3 D2PAK packaging. The improved on-resistance of 280mOhm versus 299mOhm provides better performance. Gate drive voltage remains 10V. Verification of thermal management is recommended due to the lower power dissipation rating (53W vs 96W), which may indicate different thermal characteristics.

Q: What is the difference between D2PAK and TO-263-3 packaging?

A: D2PAK and TO-263-3 are equivalent designations for the same surface mount package. Both refer to a 3-lead configuration with 2 signal leads plus a tab for thermal connection. All substitute parts listed maintain this identical package footprint and pinout compatibility.

Q: Are there performance differences between Infineon CoolMOS™ CP and P7 series?

A: The CoolMOS™ P7 series (IPB60R280P7ATMA1) represents a newer generation with improved gate charge characteristics (18nC vs 29nC) and lower on-resistance. Both series operate at 600V with equivalent current ratings. The P7 series provides superior switching performance and reduced gate drive power requirements.

Q: Which substitute part has the lowest on-resistance?

A: The STB37N60DM2AG has the lowest on-resistance at 110mOhm, achieved through higher current rating (28A). For equivalent 11A current class, the STB13N60M2 and IPB60R280P7ATMA1 provide the best on-resistance values at 380mOhm and 280mOhm respectively.

Q: Can I use a higher current rated part as a substitute?

A: Yes, provided all other electrical parameters remain compatible. Higher current rated parts (such as STB37N60DM2AG at 28A or R6015KNJTL at 15A) can substitute for the 11A IPB60R299CPATMA1 in applications where the circuit design accommodates the different on-resistance and gate charge characteristics. Thermal management and gate drive circuitry must be verified.

Q: What is the significance of RoHS3 compliance?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active substitute parts listed carry RoHS3 compliance, ensuring regulatory alignment for new designs and manufacturing processes.

Q: Are there packaging differences between Cut Tape (CT) and Tape & Reel (TR) options?

A: Cut Tape and Tape & Reel are supply format options only. Both formats contain identical parts in the same TO-263-3 D2PAK package. Selection between CT and TR depends on production volume and assembly equipment compatibility, not electrical performance.

Q: What is the operating temperature range difference between parts?

A: Most substitute parts support -55°C to 150°C operating range, matching the original IPB60R299CPATMA1. The R6011ENJTL and R6015ENJTL are specified to 150°C maximum without lower temperature specification, which may limit use in extreme cold environments. For full temperature range applications, select parts explicitly rated -55°C to 150°C.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (such as STB13N60M2 at 17nC) reduces switching losses and allows faster switching speeds with lower gate drive power. Higher gate charge (such as STB37N60DM2AG at 54nC) requires more gate drive energy but may provide other performance benefits in specific applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message