IPB60R280C6ATMA1 Equivalent & Substitute Parts

Part Overview

The IPB60R280C6ATMA1 is an N-Channel 600V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ C6 series. This device is rated for 13.8A continuous drain current at 25°C with a maximum on-resistance of 280mOhm, housed in a D2PAK (TO-263-3) surface mount package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	13.8	A
On-Resistance (Rds On Max) @ 6.5A, 10V	280	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 430µA	3.5	V
Gate Charge (Qg Max) @ 10V	43	nC
Power Dissipation (Max)	104	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPB60R280C6ATMA1 is determined by the following criteria:

Primary Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 12A or greater at 25°C
On-Resistance (Rds On): 280mOhm or lower at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Package Type: TO-263-3 (D2PAK) or equivalent surface mount configuration
Mounting Type: Surface mount
Lead configuration: 2 Leads + Tab

Regulatory & Compliance Requirements:

RoHS3 Compliance
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Unaffected status

The four substitute parts listed below satisfy all primary electrical parameters while maintaining mechanical and regulatory compatibility with the original IPB60R280C6ATMA1 specification.

Parameter Comparison

Parameter	IPB60R280C6ATMA1	IPB60R280P7ATMA1	R6015ENJTL	R6015KNJTL	STB18N60M2	STB24N60M2
Manufacturer	Infineon	Infineon	Rohm	Rohm	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600	600
Id @ 25°C (A)	13.8	12	15	15	13	18
Rds On Max @ 10V (mOhm)	280	280	290	290	280	190
Vgs(th) Max (V)	3.5	4	4	5	4	4
Qg Max @ 10V (nC)	43	18	40	37.5	21.5	29
Power Dissipation Max (W)	104	53	40	184	110	150
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IPB60R280P7ATMA1 (Infineon CoolMOS™ P7)

This part is the manufacturer-recommended direct substitute from Infineon. It maintains the same 600V/280mOhm electrical specification and D2PAK package. The IPB60R280P7ATMA1 is active in production with full RoHS3 compliance. The primary difference is reduced gate charge (18nC vs. 43nC) and lower power dissipation rating (53W vs. 104W), which represents improved efficiency in the newer P7 technology generation. This part is preferred for new designs requiring Infineon technology continuity.

STB18N60M2 (STMicroelectronics MDmesh™ II Plus)

This part meets all electrical requirements with 13A continuous drain current, 280mOhm on-resistance, and 600V rating. The STB18N60M2 is active in production with full RoHS3 compliance and -55°C to 150°C operating range. Power dissipation rating of 110W closely matches the original specification. This substitute is suitable for applications where STMicroelectronics device qualification is required.

R6015ENJTL (Rohm Semiconductor)

This part provides 15A continuous drain current with 290mOhm on-resistance at 600V, exceeding the original current specification. The R6015ENJTL is active in production with RoHS3 compliance. Operating temperature range extends to 150°C maximum. This substitute is applicable for designs requiring higher current margin or Rohm device qualification.

R6015KNJTL (Rohm Semiconductor)

This part provides 15A continuous drain current with 290mOhm on-resistance at 600V. The R6015KNJTL is active in production with full RoHS3 compliance and -55°C to 150°C operating range. Power dissipation rating of 184W exceeds the original specification significantly. This substitute is suitable for high-power applications or designs requiring extended thermal headroom.

All substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory compatibility with the original specification.

Frequently Asked Questions (FAQ)

Q: Can the IPB60R280P7ATMA1 be used as a direct replacement for the IPB60R280C6ATMA1?

A: Yes. Both parts share identical electrical ratings (600V, 280mOhm on-resistance) and D2PAK packaging. The IPB60R280P7ATMA1 is the active production equivalent from Infineon, representing a technology generation update within the same manufacturer's product line.

Q: What is the primary difference between the Infineon and STMicroelectronics substitutes?

A: The IPB60R280P7ATMA1 and STB18N60M2 both meet the 600V/280mOhm specification. The STB18N60M2 uses STMicroelectronics' MDmesh™ II Plus technology platform, while the IPB60R280P7ATMA1 uses Infineon's CoolMOS™ P7 platform. Both are active production parts with equivalent electrical performance. Selection depends on existing device qualification and supply chain requirements.

Q: Why do the Rohm R6015 parts show higher current ratings (15A vs. 13.8A)?

A: The R6015ENJTL and R6015KNJTL are rated for 15A continuous drain current, exceeding the original 13.8A specification. Both maintain the same 290mOhm on-resistance at 600V, making them electrically compatible. The higher current rating provides additional design margin and is not a limitation for applications designed for the original 13.8A part.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts use TO-263-3 (D2PAK) surface mount packaging with 2 leads plus tab configuration, maintaining mechanical compatibility with the original IPB60R280C6ATMA1 footprint and assembly process.

Q: What is the significance of the gate charge (Qg) differences between parts?

A: Gate charge values range from 18nC (IPB60R280P7ATMA1) to 43nC (original part). Lower gate charge indicates faster switching characteristics and reduced driver power requirements. This parameter does not affect substitution eligibility but may influence gate driver circuit design. All parts operate within the ±20V maximum gate voltage specification.

Q: Do all substitute parts support the full -55°C to 150°C operating temperature range?

A: The IPB60R280P7ATMA1, R6015KNJTL, STB18N60M2, and STB24N60M2 all support -55°C to 150°C operation. The R6015ENJTL is specified to 150°C maximum without a lower temperature limit in the provided data. For applications requiring full -55°C to 150°C range, the other four parts are preferred.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected. These certifications match the original IPB60R280C6ATMA1 specification, ensuring regulatory compatibility in existing product certifications.

Q: Can the STB24N60M2 be used as a substitute despite its lower on-resistance (190mOhm)?

A: Yes. The STB24N60M2 meets all substitution criteria with 600V rating, 18A continuous current, and D2PAK packaging. The lower on-resistance (190mOhm vs. 280mOhm) represents improved performance characteristics and is not a limitation. This part is suitable for applications where the enhanced electrical performance is beneficial.

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