IPB60R230P6ATMA1 Equivalent & Substitute Parts

Part Overview

The IPB60R230P6ATMA1 is an N-Channel 600V MOSFET from Infineon Technologies' CoolMOS™ P6 series, rated for 16.8A continuous drain current in a Surface Mount TO-263-3 package. This device is classified as Obsolete, necessitating identification of active equivalent and substitute parts for new designs and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance while accommodating packaging and availability constraints.

Substiute Parts

IPB60R230P6ATMA1

Infineon TechnologiesIn Stock: 1030IPB60R230P6ATMA1 Datasheet

Current PartRFQ

IPB60R280P7ATMA1

Infineon TechnologiesIn Stock: 2251IPB60R280P7ATMA1 Datasheet

MFR RecommendedRFQ

R6018ANJTL

Rohm SemiconductorIn Stock: 958R6018ANJTL Datasheet

MFR RecommendedRFQ

STB20NM60T4

STMicroelectronicsIn Stock: 3278STB20NM60T4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IPB60R230P6ATMA1 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal 600V
• Package Type: Must be Surface Mount TO-263-3 or D2PAK configuration
• Continuous Drain Current (Id): Substitute must meet or exceed 16.8A @ 25°C
• On-Resistance (Rds On): Lower or equal values are acceptable; higher values require thermal analysis
• Gate Threshold Voltage (Vgs th): Must be within ±20V maximum gate voltage specification
• Operating Temperature: Must support -55°C to 150°C range

Substitute Parts Identified:

1. IPB60R280P7ATMA1 (Infineon Technologies, CoolMOS™ P7 series) – Active status, same manufacturer platform
2. R6018ANJTL (Rohm Semiconductor) – Active status, higher current rating
3. STB20NM60T4 (STMicroelectronics, MDmesh™ series) – Active status, highest current rating

All three substitutes maintain 600V Vdss rating and Surface Mount D2PAK packaging. Current ratings range from 12A to 20A, accommodating applications with varying load requirements.

Parameter Comparison

Engineering Selection Recommendations

IPB60R280P7ATMA1 (Infineon Technologies)

This substitute is the primary recommendation for direct replacement in existing Infineon-based designs. It maintains the same manufacturer ecosystem and CoolMOS™ platform evolution (P6 to P7 series). The part is Active status with ROHS3 compliance. Current rating of 12A is lower than the original 16.8A; applications operating near maximum current must be re-evaluated. Gate charge reduction (31nC to 18nC) provides improved switching performance. Inventory availability is higher (2198 Pcs) than the obsolete original part.

R6018ANJTL (Rohm Semiconductor)

This substitute provides current rating of 18A, exceeding the original 16.8A specification. Active product status with ROHS3 compliance. On-resistance of 270mOhm is comparable to the original 230mOhm. Gate charge of 55nC is significantly higher, requiring gate driver capability assessment. Maximum gate voltage rating of ±30V provides additional margin. Suitable for applications requiring higher current headroom or thermal margin.

STB20NM60T4 (STMicroelectronics)

This substitute offers the highest current rating at 20A with Active product status and ROHS3 compliance. Power dissipation capability of 192W exceeds the original 126W, supporting higher thermal loads. On-resistance of 290mOhm is within acceptable range. Gate charge of 54nC requires gate driver verification. Highest inventory availability (3200 Pcs) ensures supply continuity. Suitable for applications requiring maximum current and thermal performance.

All three substitutes maintain 600V Vdss rating, Surface Mount D2PAK packaging, and REACH/ECCN compliance with the original part. Selection depends on application current requirements, thermal constraints, and gate driver compatibility.

Frequently Asked Questions (FAQ)

Q1: Can IPB60R280P7ATMA1 directly replace IPB60R230P6ATMA1 in all applications?

The IPB60R280P7ATMA1 maintains identical voltage rating (600V) and package type (TO-263-3 D2PAK). However, continuous drain current is reduced from 16.8A to 12A. Applications operating at currents between 12A and 16.8A must be re-evaluated for thermal and performance impact. Gate charge reduction improves switching speed. Pin-to-pin compatibility is confirmed for Surface Mount applications.

Q2: What are the key differences between the three substitute options?

IPB60R280P7ATMA1 offers the lowest gate charge (18nC) and is from the same manufacturer. R6018ANJTL provides 18A current with higher gate charge (55nC) and ±30V gate voltage rating. STB20NM60T4 delivers the highest current (20A) and power dissipation (192W) with comparable gate charge to R6018ANJTL. Selection depends on current requirements, switching frequency, and gate driver specifications.

Q3: Are all substitutes RoHS and REACH compliant?

All three active substitutes are ROHS3 compliant and REACH unaffected. The original IPB60R230P6ATMA1 is REACH unaffected but RoHS status is not specified. All parts carry MSL 1 (Unlimited) moisture sensitivity rating, suitable for standard storage and handling.

Q4: What is the impact of different on-resistance values on circuit performance?

Original part: 230mOhm @ 6.4A, 10V. IPB60R280P7ATMA1: 280mOhm @ 3.8A, 10V. R6018ANJTL: 270mOhm @ 9A, 10V. STB20NM60T4: 290mOhm @ 10A, 10V. Higher on-resistance increases conduction losses and heat generation. Applications with high continuous current or tight thermal budgets should prioritize lower on-resistance values or verify thermal performance through simulation or testing.

Q5: How do gate charge differences affect gate driver selection?

Original part: 31nC @ 10V. IPB60R280P7ATMA1: 18nC @ 10V (lower, faster switching). R6018ANJTL: 55nC @ 10V (higher, slower switching). STB20NM60T4: 54nC @ 10V (higher, slower switching). Higher gate charge requires higher gate driver current capability and may increase switching losses. Existing gate driver circuits must be verified for compatibility with substitute gate charge specifications.

Q6: Can substitutes be used in high-frequency switching applications?

IPB60R280P7ATMA1 with reduced gate charge (18nC) is suitable for high-frequency applications. R6018ANJTL and STB20NM60T4 with higher gate charge (54-55nC) require gate driver assessment for switching frequency compatibility. All parts maintain ±20V or ±30V gate voltage ratings suitable for standard PWM gate drivers. Switching frequency capability depends on gate driver current output and circuit layout.

Q7: What packaging considerations apply to these substitutes?

All substitutes use TO-263-3 D2PAK Surface Mount package, identical to the original part. Pin configuration is compatible for direct PCB replacement. Thermal pad (Tab) connection is standard across all parts. No PCB layout modifications are required for package compatibility. Thermal performance depends on PCB copper area, via placement, and thermal management design.

Q8: Which substitute is recommended for new design applications?

For new designs, STB20NM60T4 or R6018ANJTL are recommended due to Active product status, higher current ratings, and superior thermal performance. STB20NM60T4 offers the highest current (20A) and power dissipation (192W) with excellent inventory availability. R6018ANJTL provides balanced performance with 18A current and comparable on-resistance. IPB60R280P7ATMA1 is optimal for direct replacement in existing Infineon designs requiring minimal circuit changes.