IPB50R299CPATMA1 Equivalent & Substitute Parts

Part Overview

The IPB50R299CPATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 550V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the CoolMOS™ series and is housed in a PG-TO263-3-2 surface mount package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical packaging requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	550	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On Max) @ 6.6A, 10V	299	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 440µA	3.5	V
Gate Charge (Qg Max) @ 10V	31	nC
Power Dissipation (Max)	104	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IPB50R299CPATMA1 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 550V. This ensures the device can withstand the same or higher voltage stress in the application circuit.

Current Rating Compatibility: Substitute parts must have a continuous drain current (Id) rating equal to or greater than 12A at 25°C. This ensures adequate current handling capacity for the application.

On-State Resistance (Rds On): Substitute parts should have comparable or lower Rds On values to maintain similar power dissipation characteristics and thermal performance.

Package Compatibility: All substitute parts must use the TO-263-3 (D2PAK) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 150°C.

Gate Charge and Threshold Voltage: These parameters affect switching speed and gate drive requirements. Substitute parts with similar or lower gate charge values are preferred to maintain consistent gate drive circuit performance.

The following substitute parts meet these criteria:

FDB20N50F (onsemi): 500V, 20A, lower Rds On, higher power dissipation capability
STB13NK60ZT4 (STMicroelectronics): 600V, 13A, higher voltage rating
STB18N60M2 (STMicroelectronics): 600V, 13A, optimized gate charge characteristics
IXTA460P2 (IXYS): 500V, 24A, significantly higher current rating and power dissipation

Parameter Comparison

Parameter	IPB50R299CPATMA1	FDB20N50F	STB13NK60ZT4	STB18N60M2	IXTA460P2
Manufacturer	Infineon	onsemi	STMicroelectronics	STMicroelectronics	IXYS
Vdss (V)	550	500	600	600	500
Id @ 25°C (A)	12	20	13	13	24
Rds On Max (mOhm)	299 @ 6.6A, 10V	260 @ 10A, 10V	550 @ 4.5A, 10V	280 @ 6.5A, 10V	270 @ 12A, 10V
Vgs(th) Max (V)	3.5 @ 440µA	5 @ 250µA	4.5 @ 100µA	4 @ 250µA	4.5 @ 250µA
Qg Max @ 10V (nC)	31	65	92	21.5	48
Power Dissipation Max (W)	104	250	150	110	480
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263-3 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK	TO-263AA
Product Status	Obsolete	Active	Active	Active	Last Time Buy
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

FDB20N50F (onsemi): This part is recommended as the primary substitute for applications requiring direct electrical compatibility with lower voltage stress margins. The FDB20N50F has a 500V Vdss rating (50V lower than the original), 20A continuous drain current (8A higher), and significantly lower Rds On (260 mOhm vs. 299 mOhm). The part is in active production status with ROHS3 compliance, ensuring long-term availability and regulatory compliance. Higher gate charge (65 nC) requires verification of gate drive circuit capability. Inventory availability is high (13,886 pcs).

STB18N60M2 (STMicroelectronics): This part offers the closest gate charge characteristics (21.5 nC) to the original IPB50R299CPATMA1 (31 nC), making it suitable for applications with tight gate drive timing requirements. The 600V Vdss rating provides 50V additional voltage margin. Rds On is comparable (280 mOhm vs. 299 mOhm). Product status is active with ROHS3 compliance. This part is recommended when gate charge optimization is a design priority.

STB13NK60ZT4 (STMicroelectronics): This part provides the highest voltage rating (600V) among the substitutes, offering maximum voltage stress margin. The 13A continuous drain current closely matches the original specification. However, Rds On is significantly higher (550 mOhm vs. 299 mOhm), resulting in increased power dissipation and thermal considerations. Product status is active with ROHS3 compliance. This part is suitable for applications where voltage margin is critical and thermal management is adequate.

IXTA460P2 (IXYS): This part offers the highest current rating (24A) and power dissipation capability (480W), making it suitable for applications requiring significant current headroom. The 500V Vdss rating matches FDB20N50F. Rds On is comparable (270 mOhm). However, product status is Last Time Buy, indicating limited future availability. This part should be selected only when current capacity requirements exceed other substitutes and long-term supply is not a concern.

All substitute parts maintain the TO-263-3 (D2PAK) surface mount package compatibility and the full -55°C to 150°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can the IPB50R299CPATMA1 be directly replaced with FDB20N50F without circuit modifications?

A: The FDB20N50F is electrically compatible for most applications. However, the 50V lower Vdss rating (500V vs. 550V) requires verification that the application circuit does not expose the device to voltages exceeding 500V. Gate charge is higher (65 nC vs. 31 nC), which may require gate drive circuit evaluation. Rds On is lower, reducing power dissipation. PCB layout compatibility is maintained due to identical D2PAK packaging.

Q: What is the primary difference between STB18N60M2 and STB13NK60ZT4?

A: Both parts are STMicroelectronics 600V, 13A devices in D2PAK packages. The key difference is gate charge: STB18N60M2 has 21.5 nC (closer to the original 31 nC), while STB13NK60ZT4 has 92 nC (significantly higher). STB18N60M2 is preferred when gate drive timing is critical. Rds On differs slightly (280 mOhm vs. 550 mOhm), with STB18N60M2 offering better on-state performance.

Q: Is IXTA460P2 suitable for long-term production use?

A: IXTA460P2 has a Last Time Buy product status, indicating that the manufacturer has announced end-of-life. While current inventory is available (824 pcs), this part is not recommended for new designs or long-term production commitments. FDB20N50F, STB18N60M2, or STB13NK60ZT4 are preferred for designs requiring sustained component availability.

Q: Do all substitute parts meet RoHS and REACH compliance?

A: Yes. All substitute parts listed (FDB20N50F, STB13NK60ZT4, STB18N60M2, IXTA460P2) are ROHS3 compliant and REACH unaffected, matching the regulatory status of the original IPB50R299CPATMA1.

Q: Which substitute part has the lowest on-state resistance?

A: FDB20N50F has the lowest Rds On at 260 mOhm (measured at 10A, 10V), compared to the original 299 mOhm (measured at 6.6A, 10V). This results in lower power dissipation and improved thermal performance in high-current applications.

Q: Can I use IXTA460P2 in a circuit designed for 12A continuous current?

A: Yes. IXTA460P2 is rated for 24A continuous drain current, providing 2x current margin. However, the higher power dissipation capability (480W vs. 104W) means the device will not fully utilize its thermal rating in a 12A application. This is acceptable from a reliability standpoint but represents over-specification. FDB20N50F or STB18N60M2 may be more cost-effective choices for this current level.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET on or off. Higher gate charge requires more current from the gate drive circuit and increases switching time. FDB20N50F (65 nC) and STB13NK60ZT4 (92 nC) have significantly higher gate charge than the original (31 nC). Verify that the gate drive circuit can supply sufficient current at the required switching frequency. STB18N60M2 (21.5 nC) has lower gate charge and is preferred if gate drive circuit limitations exist.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts use TO-263-3 (D2PAK) surface mount packages, ensuring mechanical compatibility with existing PCB layouts. Packaging options (Cut Tape, Digi-Reel, Tube) vary by manufacturer and distributor but do not affect electrical or mechanical compatibility.

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