IPB45N06S3L-13 Equivalent & Substitute Parts

Part Overview

The IPB45N06S3L-13 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 45A continuous drain current at 25°C. This device is packaged in TO-263-3 (D2PAK) surface mount configuration and is designed for power switching applications requiring moderate voltage and current handling.

The IPB45N06S3L-13 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	45	A (Tc)
Rds On (Max) @ Id, Vgs	13.1 mOhm @ 26A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	2.2	V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	75	nC @ 10V
Power Dissipation (Max)	65	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
Vgs (Max)	±16	V
Input Capacitance (Ciss) (Max) @ Vds	3600	pF @ 25V

Substitute Part Grouping Explanation

Substitution of the IPB45N06S3L-13 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
Package: TO-263-3 / D2PAK surface mount configuration
Operating Temperature Range: -55°C to 175°C (TJ)
Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
Continuous Drain Current (Id): Equal to or greater than 45A at 25°C
Gate Drive Voltage: Compatible with 10V gate drive
Moisture Sensitivity Level: MSL 1 (Unlimited)

Electrical Performance Considerations:

On-state resistance (Rds On) must support the application's power dissipation requirements
Gate charge (Qg) affects switching speed and driver requirements
Input capacitance (Ciss) influences gate drive circuit design
Gate threshold voltage (Vgs(th)) determines logic-level compatibility

The three substitute parts listed below meet or exceed these mandatory criteria while maintaining functional equivalence within the specified electrical and mechanical parameters.

Parameter Comparison

Parameter	IPB45N06S3L-13	IRFS3806TRLPBF	PSMN015-60BS,118	PSMN7R6-60BS,118
Manufacturer	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	55	60	60	60
Id @ 25°C (A)	45	43	50	92
Rds On (Max) (mOhm)	13.1 @ 26A, 10V	15.8 @ 25A, 10V	14.8 @ 15A, 10V	7.8 @ 25A, 10V
Vgs(th) (Max) (V)	2.2 @ 30µA	4.0 @ 50µA	4.0 @ 1mA	4.0 @ 1mA
Qg (Max) (nC)	75 @ 10V	30 @ 10V	20.9 @ 10V	38.7 @ 10V
Ciss (Max) (pF)	3600 @ 25V	1150 @ 50V	1220 @ 30V	2651 @ 30V
Power Dissipation (Max) (W)	65	71	86	149
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-263-3, D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Vgs (Max) (V)	±16	±20	±20	±20

Engineering Selection Recommendations

IRFS3806TRLPBF (Infineon Technologies)

This substitute maintains Infineon Technologies manufacturing continuity. The IRFS3806TRLPBF provides 60V Vdss rating (5V higher than the original) and 43A continuous drain current, which is within 95% of the IPB45N06S3L-13 specification. The device carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. Gate charge is significantly reduced (30 nC versus 75 nC), resulting in faster switching characteristics and reduced gate driver power consumption. This part is suitable for applications where the original IPB45N06S3L-13 performance envelope is acceptable with improved switching efficiency.

PSMN015-60BS,118 (Nexperia USA Inc.)

This substitute provides 60V Vdss and 50A continuous drain current, exceeding the original specification by 11% in current handling. The PSMN015-60BS,118 is manufactured by Nexperia USA Inc. and carries Active product status with ROHS3 compliance. Gate charge is reduced to 20.9 nC, supporting faster switching operation. Power dissipation capability is increased to 86W. This part is suitable for applications requiring higher current capacity or improved thermal performance while maintaining the same voltage class.

PSMN7R6-60BS,118 (Nexperia USA Inc.)

This substitute represents a higher-performance option with 60V Vdss and 92A continuous drain current, providing 204% of the original current specification. The PSMN7R6-60BS,118 features the lowest on-state resistance (7.8 mOhm) among the substitutes, resulting in minimal power dissipation and superior thermal efficiency. Power dissipation capability reaches 149W. This part is suitable for applications requiring significant current headroom, reduced thermal management requirements, or future design scaling. Active product status and ROHS3 compliance ensure supply chain continuity.

All three substitutes share identical operating temperature range (-55°C to 175°C), MSL 1 moisture sensitivity rating, and D2PAK surface mount packaging, ensuring mechanical and thermal compatibility with existing PCB designs.

Frequently Asked Questions (FAQ)

Q: Can the IRFS3806TRLPBF directly replace the IPB45N06S3L-13 without circuit modifications?

A: The IRFS3806TRLPBF is mechanically and electrically compatible for direct substitution in most applications. Both devices use D2PAK packaging and share identical operating temperature ranges. The 60V Vdss rating provides 5V additional margin over the original 55V specification. However, the reduced gate charge (30 nC versus 75 nC) may require verification of gate driver performance, particularly in high-frequency switching applications. Verify that the gate driver can accommodate the lower charge requirement without introducing instability.

Q: What is the primary difference between the PSMN015-60BS,118 and PSMN7R6-60BS,118?

A: Both parts are manufactured by Nexperia USA Inc. and share the same 60V Vdss rating and D2PAK packaging. The PSMN7R6-60BS,118 provides significantly higher current capacity (92A versus 50A) and lower on-state resistance (7.8 mOhm versus 14.8 mOhm). The PSMN7R6-60BS,118 is suitable for applications requiring higher current handling or lower power dissipation. The PSMN015-60BS,118 is appropriate when the 50A current rating is sufficient and cost optimization is a consideration.

Q: Are all substitute parts available in the same packaging as the original IPB45N06S3L-13?

A: Yes. The IPB45N06S3L-13 is packaged in TO-263-3 / D2PAK surface mount configuration. All three substitute parts (IRFS3806TRLPBF, PSMN015-60BS,118, and PSMN7R6-60BS,118) use identical D2PAK packaging, ensuring mechanical compatibility with existing PCB layouts and assembly processes. No PCB redesign is required for package accommodation.

Q: How does the gate charge difference affect circuit design?

A: The IPB45N06S3L-13 specifies 75 nC gate charge at 10V, while the substitutes range from 20.9 nC to 38.7 nC. Lower gate charge reduces the energy required to switch the device and decreases gate driver power consumption. In high-frequency applications, this results in improved efficiency and reduced thermal stress on the gate driver IC. Verify that the existing gate driver can supply the required gate current for the selected substitute without exceeding maximum output current specifications.

Q: What is the significance of the higher Vdss rating (60V) in the substitute parts?

A: The substitute parts are rated for 60V Vdss compared to the original 55V specification. This 5V additional margin provides enhanced reliability and safety margin in applications subject to voltage transients or overshoot conditions. The higher rating does not negatively impact performance in 55V applications and may improve long-term device reliability under transient stress conditions.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts carry ROHS3 compliance certification. The original IPB45N06S3L-13 RoHS status is not specified in the provided data. The ROHS3 compliance of the substitutes ensures alignment with current environmental and regulatory requirements for electronic component manufacturing and use.

Q: Which substitute part should be selected for thermal-constrained applications?

A: The PSMN7R6-60BS,118 is the optimal choice for thermal-constrained applications. This device features the lowest on-state resistance (7.8 mOhm) and highest power dissipation capability (149W), resulting in minimal heat generation during operation. The combination of low Rds On and high current capacity (92A) enables efficient thermal management and reduced cooling requirements compared to the original IPB45N06S3L-13 or the other substitute options.

Q: Can the substitute parts be used in applications originally designed for the IPB45N06S3L-13 without performance degradation?

A: Yes. All substitute parts meet or exceed the mandatory electrical and mechanical parameters of the original IPB45N06S3L-13. The 60V Vdss rating provides additional voltage margin, and the current ratings (43A to 92A) encompass or exceed the original 45A specification. Operating temperature ranges are identical. Verify gate driver compatibility with the reduced gate charge specifications of the substitutes, particularly in high-frequency switching circuits. No performance degradation is expected when proper gate drive conditions are maintained.

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