IPB136N08N3 G MOSFET N-Channel 80V 45A Equivalent & Substitute Parts

Part Overview

The IPB136N08N3 G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 80V drain-to-source voltage and 45A continuous drain current in the OptiMOS™ series. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part is packaged in D2PAK (TO-263-3) surface mount configuration with a maximum power dissipation of 79W at case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	80	V
Continuous Drain Current @ 25°C (Id)	45	A (Tc)
On-Resistance @ 45A, 10V (Rds On Max)	13.6	mOhm
Gate Threshold Voltage @ 33µA (Vgs(th) Max)	3.5	V
Gate Charge @ 10V (Qg Max)	25	nC
Input Capacitance @ 40V (Ciss Max)	1730	pF
Power Dissipation (Max)	79	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the IPB136N08N3 G is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥80V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥45A to support application current requirements
Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal compatibility
Operating Temperature Range: Must span -55°C to 175°C
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Maximum Gate Voltage (Vgs Max): Must be ±20V for gate drive circuit compatibility

Substitute Categories:

Category A - Direct Voltage/Current Equivalents (80V Rating): Parts maintaining 80V Vdss rating with equal or higher current ratings: IPB067N08N3GATMA1, PSMN012-80BS,118, PSMN017-80BS,118

Category B - Reduced Voltage Alternatives (75V Rating): Parts with 75V Vdss rating (5V margin reduction) and higher current ratings: IRF2807STRLPBF, FDB16AN08A0, STB75NF75T4

All substitute parts are surface mount D2PAK packages with operating temperature ranges of -55°C to 175°C and gate voltage ratings of ±20V.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Power Diss (W)	Status	RoHS
IPB136N08N3 G	Infineon	80	45	13.6	25	1730	79	Obsolete	-
IPB067N08N3GATMA1	Infineon	80	80	6.7	56	3840	136	Active	ROHS3
PSMN012-80BS,118	Nexperia	80	74	11	43	2782	148	Active	ROHS3
PSMN017-80BS,118	Nexperia	80	50	17	26	1573	103	Active	ROHS3
IRF2807STRLPBF	Infineon	75	82	13	160	3820	230	Active	ROHS3
FDB16AN08A0	Fairchild	75	58	16	42	1857	135	Active	-
STB75NF75T4	STMicroelectronics	75	80	11	160	3700	300	Active	ROHS3

Engineering Selection Recommendations

Primary Recommendation - Same Voltage Class (80V):

The IPB067N08N3GATMA1 from Infineon Technologies is the preferred substitute. It maintains the 80V Vdss rating of the original part while providing 80A continuous drain current (78% higher than the original 45A). This part is active in production, ROHS3 compliant, and shares the same OptiMOS™ series technology platform. The improved on-resistance (6.7 mOhm vs. 13.6 mOhm) and higher power dissipation capability (136W vs. 79W) provide enhanced thermal performance and efficiency margins.

Alternative - Same Voltage Class (80V):

PSMN017-80BS,118 from Nexperia USA Inc. provides a closer current rating match at 50A (11% higher than original 45A) while maintaining 80V Vdss. This part is active, ROHS3 compliant, and offers lower gate charge (26 nC vs. 25 nC) and input capacitance (1573 pF vs. 1730 pF), resulting in faster switching characteristics and reduced gate drive power requirements.

Secondary Alternative - Reduced Voltage Class (75V):

STB75NF75T4 from STMicroelectronics operates at 75V Vdss (5V reduction from original specification) with 80A continuous drain current. This part is active, ROHS3 compliant, and features the highest power dissipation rating (300W) among all substitutes. Selection of this part requires verification that the 5V voltage margin reduction is acceptable for the application's maximum supply voltage and transient conditions.

Compliance Considerations:

All recommended substitutes maintain the operating temperature range of -55°C to 175°C, gate voltage rating of ±20V, and D2PAK surface mount package. All active substitutes carry ROHS3 compliance certification. REACH status is unaffected for all parts. Moisture sensitivity level remains MSL 1 (Unlimited) across all options.

Frequently Asked Questions (FAQ)

Q: Can the IPB067N08N3GATMA1 directly replace the IPB136N08N3 G without circuit modifications?

A: Yes, the IPB067N08N3GATMA1 is a direct replacement from a package and electrical interface perspective. Both parts use D2PAK surface mount packaging, operate across -55°C to 175°C, accept ±20V gate voltage, and share the same 80V Vdss rating. The higher current rating (80A vs. 45A) and lower on-resistance (6.7 mOhm vs. 13.6 mOhm) provide improved performance margins without requiring circuit redesign.

Q: What is the significance of the 5V voltage difference between 80V and 75V rated parts?

A: The 5V difference represents the maximum drain-to-source voltage the device can sustain. For applications with supply voltages up to 75V, the 75V-rated parts (IRF2807STRLPBF, FDB16AN08A0, STB75NF75T4) are suitable. For applications with supply voltages between 75V and 80V, or where transient overvoltages may occur, the 80V-rated substitutes (IPB067N08N3GATMA1, PSMN012-80BS,118, PSMN017-80BS,118) are required to maintain design margin.

Q: How do on-resistance differences affect thermal performance?

A: On-resistance (Rds On) directly determines conduction losses through the formula P = I²R. The IPB067N08N3GATMA1 with 6.7 mOhm Rds On generates approximately 49% lower conduction losses than the original 13.6 mOhm part at 45A operation. This reduction improves thermal performance and may allow operation at higher ambient temperatures or reduce heatsink requirements.

Q: Are there packaging compatibility concerns when substituting these parts?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, which is mechanically and thermally compatible with the original IPB136N08N3 G. PCB footprints, solder pad layouts, and thermal via patterns designed for the original part accommodate all listed substitutes without modification.

Q: What is the impact of gate charge differences on gate drive circuit design?

A: Gate charge (Qg) determines the total charge required to switch the device. The original part requires 25 nC at 10V, while substitutes range from 26 nC (PSMN017-80BS,118) to 160 nC (IRF2807STRLPBF, STB75NF75T4). Higher gate charge increases gate drive power dissipation and switching time. For applications with fixed gate drive circuits, verification of gate drive current capability is necessary when selecting parts with significantly higher gate charge values.

Q: Which substitute offers the best thermal performance?

A: The STB75NF75T4 provides the highest power dissipation rating at 300W (case temperature), compared to 79W for the original part. However, this rating applies at 75V Vdss. For 80V operation, the IPB067N08N3GATMA1 with 136W power dissipation and lower on-resistance provides superior thermal performance within the same voltage class.

Q: Are all substitutes ROHS3 compliant?

A: All active substitute parts listed (IPB067N08N3GATMA1, PSMN012-80BS,118, PSMN017-80BS,118, IRF2807STRLPBF, STB75NF75T4) carry ROHS3 compliance certification. The FDB16AN08A0 from Fairchild Semiconductor does not specify RoHS status in the provided data. For applications requiring RoHS3 compliance, confirm part certification with the supplier.

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